MW51040196 Search Results
MW51040196 Datasheets Context Search
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Contextual Info: TOSHIBA MICROWAVE POWER GaAs FET TIM7785-4 Internally Matched Power GaAs FETs C-Band Features • High power - P idB = 36.0 dBm at 7.7 GHz to 8.5 GHz • High gain - G 1dB = 6.0 dB at 7.7 GHz to 8.5 GHz • Broad band internally m atched • H erm etically sealed package |
OCR Scan |
TIM7785-4 MW51040196 TIM7785-4 | |
TIM7785-4Contextual Info: TOSHIBA TIM7785-4 MICROWAVE POWER GaAs FET Internally Matched Power GaAs FETs C-Band Features • High power - P1dB = 36.0 dBm at 7.7 GHz to 8.5 GHz • High gain - G1dB = 6.0 dB at 7.7 GHz to 8.5 GHz • Broad band internally matched • Hermetically sealed package |
Original |
TIM7785-4 2-11D1B) MW51040196 TIM7785-4 | |
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Contextual Info: TOSHIBA MICROWAVE POWER GaAs FET TIM7785-4 Internally Matched Power GaAs FETs C-Band Features • High power - PidB = 36.0 dBm at 7.7 GHz to 8.5 GHz • High gain - G1dB = 6.0 dB at 7.7 GHz to 8.5 GHz • Broad band internally matched • Hermetically sealed package |
OCR Scan |
TIM7785-4 0022b7Ã MW51040196 TIM7785-4 |