MW51020196 Search Results
MW51020196 Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
|---|---|---|---|
TIM7179-16Contextual Info: TOSHIBA TIM7179-16 MICROWAVE POWER GaAs FET Internally Matched Power GaAs FETs C-Band Features • High power - P1dB = 42.5 dBm at 7.1 GHz to 7.9 GHz • High gain - G1dB = 5.5 dB at 7.1 GHz to 7.9 GHz • Broad band internally matched • Hermetically sealed package |
Original |
TIM7179-16 2-16G1B) MW51020196 TIM7179-16 | |
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Contextual Info: TOSHIBA MICROWAVE POWER GaAs FET TIM7179-16 Internally Matched Power GaAs FETs C-Band Features • High power - P idB = 42.5 dBm at 7.1 GHz to 7.9 GHz • High gain - G 1dB = 5.5 dB at 7.1 GHz to 7.9 GHz • Broad band internally m atched • H erm etically sealed package |
OCR Scan |
TIM7179-16 MW51020196 TIM7179-16 | |
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Contextual Info: TOSHIBA MICROWAVE POWER GaAs FET TIM7179-16 Internally Matched Power GaAs FETs C-Band Features • High power - PidB = 42.5 dBm at 7.1 GHz to 7.9 GHz • High gain - G1dB = 5.5 dB at 7.1 GHz to 7.9 GHz • Broad band internally matched • Hermetically sealed package |
OCR Scan |
TIM7179-16 TIM7179-16 MW51020196 |