MW510 Search Results

TIM7179-16

Contextual Info: TOSHIBA TIM7179-16 MICROWAVE POWER GaAs FET Internally Matched Power GaAs FETs C-Band Features • High power - P1dB = 42.5 dBm at 7.1 GHz to 7.9 GHz • High gain - G1dB = 5.5 dB at 7.1 GHz to 7.9 GHz • Broad band internally matched • Hermetically sealed package

TIM7785-7L

Contextual Info: TOSHIBA TIM7785-7L MICROWAVE POWER GaAs FET Low Distortion Internally Matched Power GaAs FETs C-Band Features • Low intermodulation distortion - IM3 = -43 dBc at Po = 28.5 dBm, - Single carrier level • High power - P1dB = 38.5 dBm at 7.7 GHz to 8.5 GHz

Contextual Info: TOSHIBA MICROWAVE POWER GaAs FET TIM7785-4SL PRELIMINARY High Efficiency and Low Distortion Internally Matched Power GaAs FETs C-Band Features • Low interm odulation distortion - IM3 = -4 5 d B c at Po = 2 5 .5 d B m , Single Carrier Level • High po w e r

Contextual Info: TOSHIBA MICROWAVE POWER GaAs FET TIM7179-16 Internally Matched Power GaAs FETs C-Band Features • High power - P idB = 42.5 dBm at 7.1 GHz to 7.9 GHz • High gain - G 1dB = 5.5 dB at 7.1 GHz to 7.9 GHz • Broad band internally m atched • H erm etically sealed package

TIM7785-8

Contextual Info: TOSHIBA TIM7785-8 MICROWAVE POWER GaAs FET Internally Matched Power GaAs FETs C-Band Features • High power - P1dB = 39 dBm at 7.7 GHz to 8.5 GHz • High gain - G1dB = 5.5 dB at 7.7 GHz to 8.5 GHz • Broad band internally matched • Hermetically sealed package

Contextual Info: TOSHIBA TIM7785-8L MICROWAVE POWER GaAs FET Low Distortion Internally Matched Power GaAs FETs C-Band Features • Low intermodulation distortion - IM3 = -44 dBc at Po = 28 dBm, - Single carrier level • H i g h power - P-|dB = 39 dBm at 7.7 GHz to 8.5 GHz

TIM7179-16L

Contextual Info: TOSHIBA TIM7179-16L MICROWAVE POWER GaAs FET Low Distortion Internally Matched Power GaAs FETs C-Band Features • Low intermodulation distortion - IM3 = -42 dBc at Po = 31.5 dBm, - Single carrier level • High power - P1dB = 42 dBm at 7.1 GHz to 7.9 GHz

ks2000 cables pin serial diagram

Abstract: twincat plc programming manual in BK7300 rs485 modbus connection beckhoff MODBUS CONNECTION modbus cable BC7300 KL9010 KL1012 mx508
Contextual Info: MODBUS Bus Terminal Controller BC7300 Version: 1.5 Last change: 2006-11-06 Please note the following Target group This description is only intended for the use of trained specialists in control and automation engineering who are familiar with the applicable national

IEC1131-3

Abstract: bc7300 KS2000 ks2000 kabel Lesen Sie mehr!
Contextual Info: MODBUS Busklemmen Controller BC7300 Version: 1.5 Letzte Änderung: 06.11.06 Bitte beachten Sie folgende Hinweise Zielgruppe Diese Beschreibung wendet sich ausschließlich an ausgebildetes Fachpersonal der Steuerungs- und Automatisierungstechnik, die mit den geltenden nationalen Normen vertraut sind.

Contextual Info: TOSHIBA MICROWAVE POWER GaAs FET TIM7785-4 Internally Matched Power GaAs FETs C-Band Features • High power - P idB = 36.0 dBm at 7.7 GHz to 8.5 GHz • High gain - G 1dB = 6.0 dB at 7.7 GHz to 8.5 GHz • Broad band internally m atched • H erm etically sealed package

Contextual Info: TOSHIBA MICROWAVE POWER GaAs FET TIM7179-8L Low Distortion Internally Matched Power GaAs FETs C-Band Features • Low intermodulation distortion - IM3 = -44 dBc at Po = 28 dBm, - Single carrier level • High power - P1dB = 39 dBm at 7.1 GHz to 7.9 GHz • High gain

Contextual Info: TOSHIBA MICROWAVE POWER GaAs FET TIM7785-8SL PRELIMINARY High Efficiency and Low Distortion Internally Matched Power GaAs FETs C-Band Features • Low intermodulation distortion - IM3 = -45 dBc at Po = 28.5 dBm, Single Carrier Level • High power - P1dB = 39.5 dBm at 7.7 GHz to 8.5 GHz

Contextual Info: TOSHIBA MICROWAVE POWER GaAs FET TIM7179-16L Low Distortion Internally Matched Power GaAs FETs C-Band Features • Low intermodulation distortion - IM3 = -42 dBc at Po = 31.5 dBm, - Single carrier level • High power * P-idB = 42 dBm at 7.1 GHz to 7.9 GHz

Contextual Info: TOSHIBA MICROWAVE POWER GaAs FET TIM7785-4SL PRELIMINARY High Efficiency and Low Distortion Internally Matched Power GaAs FETs C-Band Features • Low intermodulation distortion - IM3 = -45 dBc at Po = 25.5 dBm, Single Carrier Level • High power - P-idB = 36.5 dBm at 7.7 GHz to 8.5 GHz

Contextual Info: TOSHIBA MICROWAVE POWER GaAs FET TIM7785-8 Internally Matched Power GaAs FETs C-Band Features • High power - P idB = 39 dBm at 7.7 GHz to 8.5 GHz • High gain - G 1dB = 5.5 dB at 7.7 GHz to 8.5 GHz • Broad band internally m atched • H erm etically sealed package

MW5108

Contextual Info: TOSHIBA MICROWAVE POWER GaAs FET TIM7785-8L Low Distortion Internally Matched Power GaAs FETs C-Band Features • Low in te rm o d u la tio n d is to rtio n - IM 3 = -44 d B c a t Po = 28 d B m , - S in g le c a rrie r level • H igh p o w e r - P idB = 39 d B m a t 7.7 G H z to 8.5 G H z

twincat plc programming manual in

Abstract: 16f020 SMALL ELECTRONICS PROJECTS in plc KL9010 C1220 IEC61131-3 Z1000 Z1100 KL1002 PLC PROGRAM beckhoff
Contextual Info: LIGHTBUS Bus Terminal Controller BC2000 Technical Documentation Version 1.1 2006-11-06 Please note the following Target group This description is only intended for the use of trained specialists in control and automation engineering who are familiar with the applicable national

TIM7785-4

Contextual Info: TOSHIBA TIM7785-4 MICROWAVE POWER GaAs FET Internally Matched Power GaAs FETs C-Band Features • High power - P1dB = 36.0 dBm at 7.7 GHz to 8.5 GHz • High gain - G1dB = 6.0 dB at 7.7 GHz to 8.5 GHz • Broad band internally matched • Hermetically sealed package

TIM7785-4SL

Contextual Info: TOSHIBA TIM7785-4SL MICROWAVE POWER GaAs FET PRELIMINARY High Efficiency and Low Distortion Internally Matched Power GaAs FETs C-Band Features • Low intermodulation distortion - IM3 = -45 dBc at Po = 25.5 dBm, Single Carrier Level • High power - P1dB = 36.5 dBm at 7.7 GHz to 8.5 GHz

Contextual Info: TOSHIBA MICROWAVE POWER GaAs FET TIM7785-8SL PRELIMINARY High Efficiency and Low Distortion Internally Matched Power GaAs FETs C-Band Features • Low interm odulation distortion - IM 3 = -4 5 d B c at Po = 2 8 .5 d B m , Single Carrier Level • High po w e r

MW5108

Abstract: TIM7785-8L
Contextual Info: TOSHIBA TIM7785-8L MICROWAVE POWER GaAs FET Low Distortion Internally Matched Power GaAs FETs C-Band Features • Low intermodulation distortion - IM3 = -44 dBc at Po = 28 dBm, - Single carrier level • High power - P1dB = 39 dBm at 7.7 GHz to 8.5 GHz • High gain

Contextual Info: TOSHIBA MICROWAVE POWER GaAs FET TIM7179-14L Low Distortion Internally Matched Power GaAs FETs C-Band Features • Low intermodulation distortion - IM3 = -43 dBc at Po = 31.5 dBm, - Single carrier level • High power - P1dB = 41.5 dBm at 7.1 GHz to 7.9 GHz

Contextual Info: TOSHIBA MICROWAVE POWER GaAs FET TIM7179-16 Internally Matched Power GaAs FETs C-Band Features • High power - PidB = 42.5 dBm at 7.1 GHz to 7.9 GHz • High gain - G1dB = 5.5 dB at 7.1 GHz to 7.9 GHz • Broad band internally matched • Hermetically sealed package

Contextual Info: TOSHIBA MICROWAVE POWER GaAs FET TIM 7785-7L Low Distortion Internally Matched Power GaAs FETs C-Band Features • Low intermodulation distortion - IM3 = -43 dBc at Po = 28.5 dBm, - Single carrier level • H i g h power - P-|dB = 38.5 dBm at 7.7 G H z to 8.5 GHz