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Contextual Info: TOSHIBA MICROWAVE POWER GaAs FET TIM7179-4 Internally Matched Power GaAs FETs C-Band Features • High power - P1dB = 36.0 dBm at 7.1 GHz to 7.9 GHz • High gain - G 1dB = 6.5 dB at 7.1 GHz to 7.9 GHz • Broad band internally m atched • H erm etically sealed package |
OCR Scan |
TIM7179-4 MW50970196 TIM7179-4 | |
TIM7179-4Contextual Info: TOSHIBA TIM7179-4 MICROWAVE POWER GaAs FET Internally Matched Power GaAs FETs C-Band Features • High power - P1dB = 36.0 dBm at 7.1 GHz to 7.9 GHz • High gain - G1dB = 6.5 dB at 7.1 GHz to 7.9 GHz • Broad band internally matched • Hermetically sealed package |
Original |
TIM7179-4 2-11D1B) MW50970196 TIM7179-4 |