MW50960196 Search Results

Contextual Info: TOSHIBA MICROWAVE POWER GaAs FET TIM6472-30SL Features • Low interm odulation distortion - IM 3 = -4 5 d B c at Po = 3 4 .5 d B m , Single Carrier Level • High po w e r - PidB = 45 dB m at 6.4 G H z to 7.2 GHz • High efficiency - Tladd = 3 6 % a t 6 -4

Contextual Info: TOSHIBA MICROWAVE POWER GaAs FET TIM6472-30SL Features • Low intermodulation distortion - IM3 = -45 dBc at Po = 34.5 dBm, Single Carrier Level • High power - PldB = 45 dBm at 6.4 GHz to 7.2 GHz • High efficiency - Tladd = 36% at 6.4 GHz to 7.2 GHz • High gain

TIM6472-30SL

Contextual Info: TOSHIBA TIM6472-30SL MICROWAVE POWER GaAs FET Features • Low intermodulation distortion - IM3 = -45 dBc at Po = 34.5 dBm, Single Carrier Level • High power - P1dB = 45 dBm at 6.4 GHz to 7.2 GHz • High efficiency - ηadd = 36% at 6.4 GHz to 7.2 GHz • High gain