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tim6472-8

Contextual Info: TOSHIBA TIM6472-8 MICROWAVE POWER GaAs FET Internally Matched Power GaAs FETs C-Band Features • High power - P1dB = 39 dBm at 6.4 GHz to 7.2 GHz • High gain - G1dB = 7.0 dB at 6.4 GHz to 7.2 GHz • Broad band internally matched • Hermetically sealed package

Contextual Info: TOSHIBA MICROW AVE POWER GaAs FET TIM6472-8 Internally Matched Power GaAs FETs C-Band Features • High power - P1dB = 39 dBm at 6.4 G H z to 7.2 G H z • High gain - G 1dB = 7.0 d B at 6.4 G Hz to 7.2 G H z • Broad band internally matched • Hermetically sealed package