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| Catalog Datasheet | Type | Document Tags | |
|---|---|---|---|
TIM6472-4Contextual Info: TOSHIBA TIM6472-4 MICROWAVE POWER GaAs FET Internally Matched Power GaAs FETs C-Band Features • High power - P1dB = 36.0 dBm at 6.4 GHz to 7.2 GHz • High gain - G1dB = 8.5 dB at 6.4 GHz to 7.2 GHz • Broad band internally matched • Hermetically sealed package |
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TIM6472-4 2-11D1B) MW50840196 TIM6472-4 | |
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Contextual Info: TOSHIBA MICROWAVE POWER GaAs FET TIM6472-4 Internally Matched Power GaAs FETs C-Band Features •H ig h power ' p idB = 36.0 dBm at 6.4 GHz to 7.2 GHz • High gain - G1dB = 8.5 dB at 6.4 GHz to 7.2 GHz • Broad band internally matched • Hermetically sealed package |
OCR Scan |
TIM6472-4 MW50840196 TIM6472-4 |