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TIM5964-35SL

Contextual Info: TOSHIBA TIM5964-35SL MICROWAVE POWER GaAs FET PRELIMINARY Features • Low intermodulation distortion - IM3 = -45 dBc at Po = 35.0 dBm • High power - P1dB = 45.5 dBm at 5.9 to 6.4 GHz • High efficiency - ηadd = 37% at 5.9 to 6.4 GHz • High gain - G1dB = 8.0 dB at 5.9 to 6.4 GHz

Contextual Info: TOSHIBA MICROWAVE POWER GaAs FET TIM5964-35SL PRELIMINARY Features • Low interm odulation distortion - IM 3 = -4 5 d B c at Po = 3 5.0 dB m • High po w e r - P idB = 4 5 .5 d B m at 5.9 to 6.4 G H z • High efficiency - riadd = 3 7 % at 5.9 to 6.4 G H z

Contextual Info: TOSHIBA TIM5964-35SLA MICROWAVE POWER GaAs FET PRELIMINARY Features • Low intermodulation distortion - IM3 = -45 dBc at Po = 35.0 dBm • High power - P1dB = 45.5 dBm at 5.9 GHz to 6.4 GHz • High efficiency - tiadd = 39% at 5.9 GHz to 6.4 GHz • High gain

Contextual Info: TOSHIBA MICROWAVE POWER GaAs FET TIM5964-35SL PRELIMINARY Features • Low interm odulation distortion - IM 3 = -4 5 d B c at Po = 3 5 .0 dB m • High p o w e r - P idB = 4 5 .5 d B m at 5.9 to 6.4 G H z • High efficiency - r |add = 3 7 % at 5.9 to 6.4 G H z