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MW50800196 Datasheets Context Search
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Contextual Info: TOSHIBA MICROWAVE POWER GaAs FET TIM5964-16SL High Efficiency and Low Distortion internally Matched Power GaAs FETs C-Band Features • Low intermodulation distortion - IM3 = -45 dBc at Po = 31.5 dBm, Single Carrier Level • High power - P-idB = 42.5 dBm at 5.9 GHz to 6.4 GHz |
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TIM5964-16SL MW50800196 | |
TIM5964-16SLContextual Info: TOSHIBA TIM5964-16SL MICROWAVE POWER GaAs FET High Efficiency and Low Distortion Internally Matched Power GaAs FETs C-Band Features • Low intermodulation distortion - IM3 = -45 dBc at Po = 31.5 dBm, Single Carrier Level • High power - P1dB = 42.5 dBm at 5.9 GHz to 6.4 GHz |
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TIM5964-16SL 2-16G1B) MW50800196 TIM5964-16SL | |
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Contextual Info: TOSHIBA MICROWAVE POWER GaAs FET TIM5964-16SL High Efficiency and Low Distortion Internally Matched Power GaAs FETs C-Band Features • Low interm odulation distortion - IM 3 = -4 5 d B c at Po = 3 1 .5 d B m , Single Carrier Level • High po w e r - PidB = 4 2 .5 d B m at 5.9 G H z to 6.4 GHz |
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TIM5964-16SL MW50800196 |