MW50740196 Search Results

Contextual Info: TOSHIBA MICROWAVE POWER GaAs FET TIM5964-8L Low Distortion Internally Matched Power GaAs FETs C-Band Features • Low intermodulation distortion - IM 3 = -45 dBc at Po = 28 dBm, - Single carrier level • High power - P-|dB = 39 dBm at 5.9 GHz to 6.4 GHz

TIM5964-8L

Contextual Info: TOSHIBA TIM5964-8L MICROWAVE POWER GaAs FET Low Distortion Internally Matched Power GaAs FETs C-Band Features • Low intermodulation distortion - IM3 = -45 dBc at Po = 28 dBm, - Single carrier level • High power - P1dB = 39 dBm at 5.9 GHz to 6.4 GHz • High gain

Contextual Info: TOSHIBA MICROWAVE POWER GaAs FET TIM5964-8L Low Distortion Internally Matched Power GaAs FETs C-Band Features • Low in te rm o d u la tio n d is to rtio n - IM 3 = -45 d B c a t Po = 28 d B m , - S in g le c a rrie r level • H igh p o w e r - P idB = 39 d B m a t 5.9 G H z to 6.4 G H z