MW50620196 Search Results
MW50620196 Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
|---|---|---|---|
|
Contextual Info: TOSHIBA MICROWAVE POWER GaAs FET TIM5053-16 Internally Matched Power GaAs FETs C-Band Features • H i g h power - P idB = 42.5 dBm at 5.0 GHz to 5.3 GHz • High gain - G-|dB = 8 dB at 5.0 GHz to 5.3 GHz • Broad band internally matched • Hermetically sealed package |
OCR Scan |
TIM5053-16 2-16G1B) MW50620196 00224m | |
TIM5053-16Contextual Info: TOSHIBA TIM5053-16 MICROWAVE POWER GaAs FET Internally Matched Power GaAs FETs C-Band Features • High power - P1dB = 42.5 dBm at 5.0 GHz to 5.3 GHz • High gain - G1dB = 8 dB at 5.0 GHz to 5.3 GHz • Broad band internally matched • Hermetically sealed package |
Original |
TIM5053-16 2-16G1B) MW50620196 TIM5053-16 |