MW50600196 Search Results
MW50600196 Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
|---|---|---|---|
TIM5053-4Contextual Info: TOSHIBA TIM5053-4 MICROWAVE POWER GaAs FET Internally Matched Power GaAs FETs C-Band Features • High power - P1dB = 36.0 dBm at 5.0 GHz to 5.3 GHz • High gain - G1dB = 9.5 dB at 5.0 GHz to 5.3 GHz • Broad band internally matched • Hermetically sealed package |
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TIM5053-4 2-11D1B) MW50600196 TIM5053-4 | |
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Contextual Info: TOSHIBA MICROWAVE POWER GaAs FET TIM5053-4 Internally Matched Power GaAs FETs C-Band Features • High power - P idB = 36.0 dBm at 5.0 GHz to 5.3 GHz • High gain - G idB = 9.5 dB at 5.0 GHz to 5.3 GHz • Broad band internally matched • Hermetically sealed package |
OCR Scan |
TIM5053-4 2-11D1B) MW50600196 |