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TIM4951-8

Contextual Info: TOSHIBA TIM4951-8 MICROWAVE POWER GaAs FET Internally Matched Power GaAs FETs C-Band Features • High power - P1dB = 39 dBm at 4.9 GHz to 5.10 GHz • High gain - G1dB = 9.5 dB at 4.9 GHz to 5.1 GHz • Broad band internally matched • Hermetically sealed package

Contextual Info: TOSHIBA MICROWAVE POWER GaAs FET TIM4951-8 Internally Matched Power GaAs FETs C-Band Features • High power - P idB = 39 dBm at 4.9 GHz to 5.10 GHz • High gain - G 1dB = 9.5 dB at 4.9 GHz to 5.1 GHz • Broad band internally m atched • H erm etically sealed package

Contextual Info: TOSHIBA MICROWAVE POWER GaAs FET TIM4951-8 Internally Matched Power GaAs FETs C-Band Features • High power ' PidB = 39 dBm at 4.9 GHz to 5.10 GHz • High gain - G-|dB = 9.5 dB at 4.9 GHz to 5.1 GHz • Broad band internally matched • Hermetically sealed package