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TIM4450-8 Abstract: TPM4450-8 Contextual Info: TOSHIBA TIM4450-8 MICROWAVE POWER GaAs FET Internally Matched Power GaAs FETs C-Band Features • High power - P1dB = 39 dBm at 4.4 GHz to 5.0 GHz • High gain - G1dB = 9.5 dB at 4.4 GHz to 5.0 GHz • Broad band internally matched • Hermetically sealed package	Original	TIM4450-8 2-11D1B) MW50510196 TPM4450-8 TIM4450-8	PDF
Contextual Info: TOSHIBA MICROWAVE POWER GaAs FET TIM4450-8 Internally Matched Power GaAs FETs C-Band Features • High power - P1dB = 39 dBm at 4.4 GHz to 5.0 GHz • High gain - G 1dB = 9.5 dB at 4.4 GHz to 5.0 GHz • Broad band internally m atched • H erm etically sealed package	OCR Scan	TIM4450-8 MW50510196 TPM4450-8	PDF

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TIM4450-8

Abstract: TPM4450-8
Contextual Info: TOSHIBA TIM4450-8 MICROWAVE POWER GaAs FET Internally Matched Power GaAs FETs C-Band Features • High power - P1dB = 39 dBm at 4.4 GHz to 5.0 GHz • High gain - G1dB = 9.5 dB at 4.4 GHz to 5.0 GHz • Broad band internally matched • Hermetically sealed package

Original

TIM4450-8 2-11D1B) MW50510196 TPM4450-8 TIM4450-8

PDF

Contextual Info: TOSHIBA MICROWAVE POWER GaAs FET TIM4450-8 Internally Matched Power GaAs FETs C-Band Features • High power - P1dB = 39 dBm at 4.4 GHz to 5.0 GHz • High gain - G 1dB = 9.5 dB at 4.4 GHz to 5.0 GHz • Broad band internally m atched • H erm etically sealed package

OCR Scan

TIM4450-8 MW50510196 TPM4450-8

PDF