MW50500196 Search Results
MW50500196 Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
|---|---|---|---|
|
Contextual Info: TOSHIBA MICROWAVE POWER GaAs FET TIM4450-4L Low Distortion Internally Matched Power GaAs FETs C-Band Features • Low intermodulation distortion - IM 3 = -45 dBc at Po = 25 dBm, - Single carrier level • High power ' P-idB = 36 dBm at 4.4 G H z to 5.0 GHz |
OCR Scan |
TIM4450-4L TIM4450-4L MW50500196 | |
TIM4450-4LContextual Info: TOSHIBA TIM4450-4L MICROWAVE POWER GaAs FET Low Distortion Internally Matched Power GaAs FETs C-Band Features • Low intermodulation distortion - IM3 = -45 dBc at Po = 25 dBm, - Single carrier level • High power - P1dB = 36 dBm at 4.4 GHz to 5.0 GHz • High gain |
Original |
TIM4450-4L 2-11D1B) MW50500196 TIM4450-4L | |
|
Contextual Info: TOSHIBA TIM4450-4L MICROWAVE POWER GaAs FET Low Distortion Internally Matched Power GaAs FETs C-Band Features • Low interm odulation distortion - IM3 = -45 d B c at Po = 25 dBm, - Single carrier level • High power - P1dB = 36 dBm at 4.4 GHz to 5.0 GHz |
OCR Scan |
TIM4450-4L MW50500196 4450-4L |