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TIM3742-16 Abstract: TPM3742-16 Contextual Info: TOSHIBA TIM3742-16 MICROWAVE POWER GaAs FET Internally Matched Power GaAs FETs C-Band Features • High power - P1dB = 42.5 dBm at 3.7 GHz to 4.2 GHz • High gain - G1dB = 9.5 dB at 3.7 GHz to 4.2 GHz • Broad band internally matched • Hermetically sealed package	Original	TIM3742-16 2-16G1B) MW50460196 TPM3742-16 TIM3742-16	PDF
Contextual Info: TOSHIBA MICROWAVE POWER GaAs FET TIM3742-16 Internally Matched Power GaAs FETs C-Band Features • High power - P1dB = 42.5 dBm at 3.7 GHz to 4.2 GHz • High gain - G 1dB = 9.5 dB at 3.7 GHz to 4.2 GHz • Broad band internally m atched • H erm etically sealed package	OCR Scan	TIM3742-16 MW50460196 TPM3742-16	PDF

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TIM3742-16

Abstract: TPM3742-16
Contextual Info: TOSHIBA TIM3742-16 MICROWAVE POWER GaAs FET Internally Matched Power GaAs FETs C-Band Features • High power - P1dB = 42.5 dBm at 3.7 GHz to 4.2 GHz • High gain - G1dB = 9.5 dB at 3.7 GHz to 4.2 GHz • Broad band internally matched • Hermetically sealed package

Original

TIM3742-16 2-16G1B) MW50460196 TPM3742-16 TIM3742-16

PDF

Contextual Info: TOSHIBA MICROWAVE POWER GaAs FET TIM3742-16 Internally Matched Power GaAs FETs C-Band Features • High power - P1dB = 42.5 dBm at 3.7 GHz to 4.2 GHz • High gain - G 1dB = 9.5 dB at 3.7 GHz to 4.2 GHz • Broad band internally m atched • H erm etically sealed package

OCR Scan

TIM3742-16 MW50460196 TPM3742-16

PDF