MW50420196 Search Results

Contextual Info: TOSHIBA MICROWAVE POWER GaAs FET TIM3742-4 Internally Matched Power GaAs FETs C-Band Features • High power - P1dB = 36.0 dBm at 3.7 GHz to 4.2 GHz • High gain - G 1dB = 10.5 dB at 3.7 GHz to 4.2 GHz • Broad band internally m atched • H erm etically sealed package

TPM3742-4

Abstract: TIM3742-4
Contextual Info: TOSHIBA TIM3742-4 MICROWAVE POWER GaAs FET Internally Matched Power GaAs FETs C-Band Features • High power - P1dB = 36.0 dBm at 3.7 GHz to 4.2 GHz • High gain - G1dB = 10.5 dB at 3.7 GHz to 4.2 GHz • Broad band internally matched • Hermetically sealed package