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| Catalog Datasheet | Type | Document Tags | |
|---|---|---|---|
TIM1415-8Contextual Info: TOSHIBA TIM1415-8 MICROWAVE POWER GaAs FET Internally Matched Power GaAs FETs X, Ku-Band Features • High power - P1dB = 39.5 dBm at 14.5 GHz to 15.0 GHz • High gain - G1dB = 4.5 dB at 14.5 GHz to 15.0 GHz • Broad Band Internally Matched • Hermetically sealed package |
Original |
TIM1415-8 2-11C1B) MW50410196 TIM1415-8 | |
JE 33Contextual Info: TOSHIBA TIM1415-8 MICROWAVE POWER GaAs FET Internally Matched Power GaAs FETs X, Ku-Band Features • High power - P1dB = 39.5 dBm at 14.5 GHz to 15.0 GHz • High gain - G 1dB = 4.5 dB at 14.5 GHz to 15.0 GHz • Broad Band Internally M atched • H erm etically sealed package |
OCR Scan |
TIM1415-8 2-11C1B) MW50410196 JE 33 |