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| Catalog Datasheet | Type | Document Tags | |
|---|---|---|---|
TIM1414-10LAContextual Info: TOSHIBA MICROWAVE POWER GaAs FET T IM 1 4 1 4 -1 0 L A Features • Low intermodulation distortion - IM3 = -45 dBc at Po = 29.0 dBm, Single Carrier Level • High power - P1dB = 40.5 dBm at 14.0 GHz to 14.5 GHz • High gain - G1dB = 6.0 dB at 14.0 GHz to 14.5 GHz |
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MW50360196 TIM1414-10LA | |
TIM1414-10LAContextual Info: TOSHIBA TIM1414-10LA MICROWAVE POWER GaAs FET Features • Low intermodulation distortion - IM3 = -45 dBc at Po = 29.0 dBm, Single Carrier Level • High power - P1dB = 40.5 dBm at 14.0 GHz to 14.5 GHz • High gain - G1dB = 6.0 dB at 14.0 GHz to 14.5 GHz |
Original |
TIM1414-10LA 2-11C1B) MW50360196 TIM1414-10LA | |
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Contextual Info: TOSHIBA MICROWAVE POWER GaAs FET TIM1414-10LA Features • Low intermodulation distortion - IM3 = -45 dBc at Po = 29.0 dBm, Single Carrier Level • High power - P1dB = 40.5 dBm at 14.0 GHz to 14.5 GHz • High gain - G1dB = 6.0 dB at 14.0 GHz to 14.5 GHz |
OCR Scan |
TIM1414-10LA Inte80 MW50350196 |