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| Catalog Datasheet | Type | Document Tags | |
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TIM1414-8LContextual Info: TOSHIBA TIM1414-8L MICROWAVE POWER GaAs FET Low Distortion Internally Matched Power GaAs FETs X, Ku-Band Features • Low intermodulation distortion - IM3 = -45 dBc at Po = 28 dBm, - Single carrier level • High power - P1dB = 39.5 dBm at 14.0 GHz to 14.5 GHz |
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TIM1414-8L 2-11C1B) MW50320196 TIM1414-8L | |
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Contextual Info: TOSHIBA MICROWAVE POWER GaAs FET T IM 1 4 1 4 - 8 L Low Distortion Internally Matched Power GaAs FETs X, Ku-Band Features • Low intermodulation distortion - IM3 = -45 dBc at Po = 28 dBm, - Single carrier level • High power - PidB = 39.5 dBm at 14.0 GHz to 14.5 GHz |
OCR Scan |
MW50320196 TIM1414-8L | |
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Contextual Info: TOSHIBA MICROWAVE POWER GaAs FET TIM1414-8L Low Distortion Internally Matched Power GaAs FETs X, Ku-Band Features • Low interm odulation distortion - IM3 = -45 d B c at Po = 28 dBm, - Single carrier level • High power - P1dB = 39.5 dBm at 14.0 GHz to 14.5 GHz |
OCR Scan |
TIM1414-8L 25GE12 MW50320196 414-8L |