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    TS 4142

    Contextual Info: TOSHIBA MICROWAVE POWER GaAs FET TIM1414-2 Internally Matched Power GaAs FETs X, Ku-Band Features • High power - P1dB = 33.5 dBm at 14.0 GHz to 14.5 GHz • High gain - G1dB = 6.5 dB at 14.0 GHz to 14.5 GHz • Broadband internally matched • Hermetically sealed package


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    TIM1414-2 MW50270196 TS 4142 PDF

    TIM1414-2

    Contextual Info: TOSHIBA TIM1414-2 MICROWAVE POWER GaAs FET Internally Matched Power GaAs FETs X, Ku-Band Features • High power - P1dB = 33.5 dBm at 14.0 GHz to 14.5 GHz • High gain - G1dB = 6.5 dB at 14.0 GHz to 14.5 GHz • Broadband internally matched • Hermetically sealed package


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    TIM1414-2 MW50270196 TIM1414-2 PDF