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| Catalog Datasheet | Type | Document Tags | |
|---|---|---|---|
TIM1213-2Contextual Info: TOSHIBA TIM1213-2 MICROWAVE POWER GaAs FET Internally Matched Power GaAs FETs X, Ku-Band Features • High power - P1dB = 33.5 dBm at 12.7 GHz to 13.2 GHz • High gain - G1dB = 7.5 dB at 12.7 GHz to 13.2 GHz • Broadband internally matched • Hermetically sealed package |
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TIM1213-2 MW50210196 TIM1213-2 | |
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Contextual Info: TOSHIBA MICROWAVE POWER GaAs FET T IM 1213-2 Internally Matched Power GaAs FETs X, Ku-Band Features • High power - P1dB = 33.5 dBm at 12.7 GHz to 13.2 GHz • High gain - G-icb = 7.5 dB at 12.7 GHz to 13.2 GHz • Broadband internally matched • Hermetically sealed package |
OCR Scan |
10T7BS0 |