MW50200196 Search Results
MW50200196 Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
|---|---|---|---|
TIM1112-8Contextual Info: TOSHIBA TIM1112-8 MICROWAVE POWER GaAs FET Internally Matched Power GaAs FETs X, Ku-Band Features • High power - P1dB = 39.5 dBm at 11.7 GHz to 12.7 GHz • High gain - G1dB = 5.0 dB at 11.7 GHz to 12.7 GHz • Broadband internally matched • Hermetically sealed package |
Original |
TIM1112-8 2-11C1B) MW50200196 TIM1112-8 | |
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Contextual Info: TOSHIBA MICROW AVE POWER GaAs FET TIM1112-8 internally Matched Power G aAs FETs X, Ku-Band Features * High power - P1dB = 39.5 dBm at 11.7 GHz to 12.7 GHz * High gain G1dB = 5.0 dB at 11.7 GHz to 12.7 GHz • Broadband internally matched • Hermetically sealed package |
OCR Scan |
TIM1112-8 2-11C1B) MW50200196 MW5O2O0196 | |
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Contextual Info: TOSHIBA MICROWAVE POWER GaAs FET TIM1112-8 Internally Matched Power GaAs FETs X, Ku-Band Features • High power - P1dB = 39.5 dBm at 11.7 GHz to 12.7 GHz • High gain - G-|dB = 5.0 dB at 11.7 GHz to 12.7 GHz • Broadband internally matched • Hermetically sealed package |
OCR Scan |
TIM1112-8 2-11C1B) MW50200196 |