MW50150196 Search Results
MW50150196 Datasheets Context Search
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Contextual Info: TOSHIBA MICROWAVE POWER GaAs FET TIM1011-10L Low Distortion Internally Matched Power GaAs FETs X, Ku-Band Features • Low interm odulation distortion - I M 3 = -45 d B c at Po = 29 dBm, - Single carrier level • High power - P1dB = 40.5 dBm at 10.7 GHz to 11.7 GHz |
OCR Scan |
TIM1011-10L 2-11C1B) MW50150196 | |
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Contextual Info: TOSHIBA MICROWAVE POWER GaAs FET TIM1011-10L Low Distortion Internally Matched Power GaAs FETs X, Ku-Band Features • Low intermodulation distortion - IM3 = -45 dBc at Po = 29 dBm, - Single carrier level • High power - P1dB = 40.5 dBm at 10.7 GHz to 11.7 GHz |
OCR Scan |
TIM1011-10L TIM1011-10L MW50150196 | |
TIM1011-10LContextual Info: TOSHIBA TIM1011-10L MICROWAVE POWER GaAs FET Low Distortion Internally Matched Power GaAs FETs X, Ku-Band Features • Low intermodulation distortion - IM3 = -45 dBc at Po = 29 dBm, - Single carrier level • High power - P1dB = 40.5 dBm at 10.7 GHz to 11.7 GHz |
Original |
TIM1011-10L 2-11C1B) MW50150196 TIM1011-10L |