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Catalog Datasheet	Type	Document Tags	PDF
Contextual Info: TOSHIBA MICROWAVE POWER GaAs FET TIM1011-8 Internally Matched Power GaAs FETs X, Ku-Band Features • High power - P1dB = 39.5 dBm at 10.7 GHz to 11.7 GHz • High gain - G-\|dB = 6.0 dB at 10.7 GHz to 11.7 GHz • Broadband internally matched • Hermetically sealed package	OCR Scan	TIM1011-8 MW50120196	PDF
TIM1011 Abstract: TIM1011-8 Contextual Info: TOSHIBA TIM1011-8 MICROWAVE POWER GaAs FET Internally Matched Power GaAs FETs X, Ku-Band Features • High power - P1dB = 39.5 dBm at 10.7 GHz to 11.7 GHz • High gain - G1dB = 6.0 dB at 10.7 GHz to 11.7 GHz • Broadband internally matched • Hermetically sealed package	Original	TIM1011-8 2-11C1B) MW50120196 TIM1011-8 TIM1011	PDF

Catalog Datasheet

Type

Document Tags

PDF

Contextual Info: TOSHIBA MICROWAVE POWER GaAs FET TIM1011-8 Internally Matched Power GaAs FETs X, Ku-Band Features • High power - P1dB = 39.5 dBm at 10.7 GHz to 11.7 GHz • High gain - G-|dB = 6.0 dB at 10.7 GHz to 11.7 GHz • Broadband internally matched • Hermetically sealed package

OCR Scan

TIM1011-8 MW50120196

PDF

TIM1011

Abstract: TIM1011-8
Contextual Info: TOSHIBA TIM1011-8 MICROWAVE POWER GaAs FET Internally Matched Power GaAs FETs X, Ku-Band Features • High power - P1dB = 39.5 dBm at 10.7 GHz to 11.7 GHz • High gain - G1dB = 6.0 dB at 10.7 GHz to 11.7 GHz • Broadband internally matched • Hermetically sealed package

Original

TIM1011-8 2-11C1B) MW50120196 TIM1011-8 TIM1011

PDF