MW50090196 Search Results
MW50090196 Datasheets Context Search
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Contextual Info: TOSHIBA MICROWAVE POWER GaAs FET TIM1011-4 Internally Matched Power GaAs FETs X, Ku-Band Features • High power - P1dB = 36.5 dBm at 10.7 GHz to 11.7 GHz • High gain - G-|dB = 7.5 dB at 10.7 GHz to 11.7 GHz • Broadband internally matched • Hermetically sealed package |
OCR Scan |
TIM1011-4 MW50090196 | |
TIM1011-4Contextual Info: TOSHIBA TIM1011-4 MICROWAVE POWER GaAs FET Internally Matched Power GaAs FETs X, Ku-Band Features • High power - P1dB = 36.5 dBm at 10.7 GHz to 11.7 GHz • High gain - G1dB = 7.5 dB at 10.7 GHz to 11.7 GHz • Broadband internally matched • Hermetically sealed package |
Original |
TIM1011-4 MW50090196 TIM1011-4 |