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Contextual Info: TOSHIBA MICROWAVE POWER GaAs FET TIM0910-5 Internally Matched Power GaAs FETs X, Ku-Band Features • High power - P1dB = 37.5 dBm at 9.5 GHz to 10.5 GHz • High gain - G1dB = 7.0 dB at 9.5 GHz to 10.5 GHz • Broadband internally matched • Hermetically sealed package	OCR Scan	TIM0910-5 MW50030196	PDF
TIM0910-5 Abstract: toshiba fet Contextual Info: TOSHIBA TIM0910-5 MICROWAVE POWER GaAs FET Internally Matched Power GaAs FETs X, Ku-Band Features • High power - P1dB = 37.5 dBm at 9.5 GHz to 10.5 GHz • High gain - G1dB = 7.0 dB at 9.5 GHz to 10.5 GHz • Broadband internally matched • Hermetically sealed package	Original	TIM0910-5 MW50030196 TIM0910-5 toshiba fet	PDF

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Contextual Info: TOSHIBA MICROWAVE POWER GaAs FET TIM0910-5 Internally Matched Power GaAs FETs X, Ku-Band Features • High power - P1dB = 37.5 dBm at 9.5 GHz to 10.5 GHz • High gain - G1dB = 7.0 dB at 9.5 GHz to 10.5 GHz • Broadband internally matched • Hermetically sealed package

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TIM0910-5 MW50030196

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TIM0910-5

Abstract: toshiba fet
Contextual Info: TOSHIBA TIM0910-5 MICROWAVE POWER GaAs FET Internally Matched Power GaAs FETs X, Ku-Band Features • High power - P1dB = 37.5 dBm at 9.5 GHz to 10.5 GHz • High gain - G1dB = 7.0 dB at 9.5 GHz to 10.5 GHz • Broadband internally matched • Hermetically sealed package

Original

TIM0910-5 MW50030196 TIM0910-5 toshiba fet

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