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| Catalog Datasheet | Type | Document Tags | |
|---|---|---|---|
TIM0910-2Contextual Info: TOSHIBA TIM0910-2 MICROWAVE POWER GaAs FET Internally Matched Power GaAs FETs X, Ku-Band Features • High power - P1dB = 33.5 dBm at 9.5 GHz to 10.5 GHz • High gain - G1dB = 7.5 dB at 9.5 GHz to 10.5 GHz • Broadband internally matched • Hermetically sealed package |
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TIM0910-2 MW50010196 TIM0910-2 | |
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Contextual Info: TOSHIBA TIM0910-2 MICROWAVE POWER GaAs FET Internally Matched Power GaAs FETs X, Ku-Band Features • High power - P1dB = 33.5 dBm at 9.5 GHz to 10.5 GHz • High gain - G 1dB = 7.5 dB at 9.5 GHz to 10.5 GHz • Broadband internally matched • Hermetically sealed package |
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TIM0910-2 TransconductaMW50010196 MW50010196 TIM0910-2 |