MW30010196 Search Results

mw3001

Contextual Info: TOSHIBA MICROWAVE POWER GaAs FET TNM1800-7 High Power GaAs FETs L, S-Band Features • High power - P1dB = 39.5 dBm at 1.8 GHz • High gain - G idB = 10.0 dB at 1.8 GHz • Hermetically sealed package RF Performance Specifications (Ta = 25° C) Characteristics

TNM1800-7

Contextual Info: TOSHIBA MICROWAVE POWER GaAs FET TNM1800-7 High Power GaAs FETs L, S-Band Features • High power - P1dB = 39.5 dBm at 1.8 GHz • High gain - G1dB = 10.0 dB at 1.8 GHz • Hermetically sealed package RF Performance Specifications (Ta = 25° C) Characteristics

Contextual Info: TOSHIBA MICROWAVE POWER GaAs FET TNM1800-7 High Power GaAs FETs L, S-Band Features • High power - P 1dB = 3 9 .5 dBm at 1.8 G H z • High gain - G 1dB = 10 .0 dB at 1.8 G H z • Herm etically sealed p ack ag e RF Performance Specifications (Ta = 25° C)