MW10040196 Search Results
MW10040196 Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
|---|---|---|---|
|
Contextual Info: TOSHIBA MICROWAVE POWER GaAs FET JS8820-AS Power GaAs FETs Chip Form Features • High power - P idB = 36 dBm at f = 6 GHz • High gain - G idB = 8.5 dB at f = 6 GHz • Suitable for C-Band am plifier • Ion implantation • C h ip form RF Performance Specifications (Ta = 25° C) |
OCR Scan |
JS8820-AS MW10040196 JS8820-AS | |
|
Contextual Info: TOSHIBA MICROWAVE POWER GaAs FET JS8820-AS Power GaAs FETs Chip Form Features • High power - P1dB = 36 dBm at f = 6 GHz • High gain - G1dB = 8.5 dB at f = 6 GHz • Suitable for C-Band amplifier • Ion implantation • Chip form RF Performance Specifications (Ta = 25° C) |
Original |
JS8820-AS MW10040196 JS8820-AS | |
|
Contextual Info: TOSHIBA MICROWAVE POWER GaAs FET JS 8820-A S Power GaAs FETs Chip Form Features • High power - P idB = 36 dBm at f = 6 GHz • High gain - — 8.5 dB at f = 6 GHz • Suitable for C-Band amplifier • Ion implantation • Chip form RF Performance Specifications (Ta = 25° C) |
OCR Scan |
820-A JS8820-AS JS8820-AS Cds23 MW10040196 |