MW 101 L Search Results

Contextual Info: SD-101 VR 400 30 1100 *4 *5 *① 光he contents of this data sheet are subject to change without advance notice for the purpose of improvement. When using this product, would you please refer to the latest specifications. SD-101 / P D / 光a / mW IL Light current

NKG103P

Abstract: NKR101 NAG103P NAR101 NKR103 NKA101 NKG101P NAA101 NAA103 NAG101P
Contextual Info: • SUPER BRIGHT LED NUMERIC DISPLAY 101 / 103 Series Square Shape Type 25mm ■ Absolute Maximum Ratings Ta = 25°C Red Green Orange NAR / NKR NAG / NKG NAA / NKA Unit Power Dissipation Pb 120 126 126 mW Forward Current IF 30 25 25 mA Peak Forward Current

AES17-1991

Abstract: CDB4341A CS4341 CS4341A CS4341A-KS
Contextual Info: CS4341A 24-Bit, 192 kHz Stereo DAC with Volume Control Features Description 101 dB Dynamic Range -91 dB THD+N +3.3 V or +5 V Power Supply 50 mW with 3. 3V supply Low Clock Jitter Sensitivity Filtered Line Level Outputs On-Chip Digital De-emphasis for 32, 44.1,

NSG103P

Contextual Info: • SUPER BRIGHT LED NUMERIC DISPLAY NS 101 / NS 103 Series Square Shape Type 15mm ■ Absolute Maximum Ratings Ta = 25°C Red Green Orange NSR NSG NSA Unit Power Dissipation Pb 120 126 126 mW Forward Current IF 30 25 25 mA Peak Forward Current IFM 120 100

Contextual Info: CS4341A 24-Bit, 192 kHz Stereo DAC with Volume Control Features Description 101 dB Dynamic Range -91 dB THD+N +3.3 V or +5 V Power Supply 50 mW with 3.3 V supply Low Clock Jitter Sensitivity Filtered Line Level Outputs On-Chip Digital De-emphasis for 32, 44.1,

AES17-1991

Abstract: CDB4340A CS4340 CS4340A CS4340A-KS
Contextual Info: CS4340A 24-Bit, 192 kHz Stereo DAC for Audio Features Description 101 dB Dynamic Range -91 dB THD+N +3.3 V or +5 V Power Supply 50 mW with 3.3 V supply Low Clock Jitter Sensitivity Filtered Line Level Outputs On-Chip Digital De-emphasis for 44.1kHz Popguard Technology for Control of Clicks

CDB4340

Abstract: CS4340 CS4340-BS CS4340-CZ CS4340-CZZ CS4340-DS CS4340-KS CS4340-KSZ DS297
Contextual Info: CS4340 24-Bit, 96 kHz Stereo D/A Converter for Audio Features z 101 dB Dynamic Range z -91 dB THD+N z +3.0 V or +5.0 V Power Supply z Low Clock Jitter Sensitivity z Filtered Line-level Outputs z On-chip Digital De-emphasis for 32, 44.1 and 48 kHz z 33 mW with 3V Supply

BFW45

Abstract: BFR59 BFS89 BFS90 BFS91 BFT47 BFT48 BFT49 BFT57 BFT58
Contextual Info: High Voltage Transistors TYPE NO. 101 POLA­ RITY CASE MAXIMUM RATINGS VCEO IC Pd ICM* VCER* mA (mW) (V) VCE(sat) HFE min max IC (mA) VCE (V) m ai (V) IC (mA) fr min (MHz) Cob Cre* max (MHz) BFR59 BFS89 BFS90 BFS91 BFT47 N N P P N TO-39 TO-39 TO-39 TO-39

LM2903

Abstract: HA17903 Signetics TTL UA2903 M51923 NJM2903
Contextual Info: - 101 LM2903 w æ t m ï ï t s l 7*JI, N * * ig , 2 n m ib ftn iA m ? ^ r • => v - * T - , f¥ m ® W Œ * ïB a '» i£ t ' . I t i # l i T T L , CM OS f n g * » ÿ ? * UllfS £ ¡ S S f f i ® T - £ 5 . 2 V ~ 36V ( # * « 0 ± 1 V —± 1 8 V ( 2 MW,)

High-Frequency Modulation IC for Laser Diode

Abstract: TC9386FU
Contextual Info: 5. Technical Datasheets 5–3 TOLD2003SDA Features • Two-wavelength laser diode • Use of a monolithic chip realizes high-precision lasing point spacing. • Has succeeded in 85˚C operation for the first time as a two-wavelength laser diode. Suitable for use in DVD car

ADJD-E622-QR999

Abstract: AEC-Q100 GS101 HDJD-J822 IPC-SM-782 QFN-16 ADJD-E622
Contextual Info: ADJD-E622-QR999 RGB Color Sensor in QFN Package Data Sheet Description Features ADJD-E622-QR999 is a high performance, small in size, cost effective light to voltage converting sensor. The sensor combines a photodiode array and three transimpedance amplifiers in a single monolithic CMOS IC

F-053

Abstract: PG-SOT-363 BSD235C L6327
Contextual Info: BSD235C OptiMOS 2 + OptiMOS™-P 2 Small Signal Transistor Product Summary Features P N -20 20 V VGS=±4.5 V 1200 350 mW VGS=±2.5 V 2100 600 -0.53 0.95 • Complementary P + N channel · Enhancement mode VDS · Super Logic level 2.5V rated RDS(on),max

TSHA550

Abstract: TSHA5500 TSHA5501 TSHA5502 TSHA5503
Contextual Info: TSHA550. GaAlAs Infrared Emitting Diode in ø 5 mm T–1¾ Package Description The TSHA550. series are high-efficiency infrared emitting diodes in GaAlAs on GaAlAs techno- logy, molded in a clear, untinted plastic package. In comparison with the standard GaAs

TSTS7301

Abstract: TSTS7302 TSTS7300 TSTS7303
Contextual Info: TSTS 730. TELEFUNKEN Semiconductors GaAs IR Emitting Diodes in Hermetically Sealed TO18 Case Description The TSTS 730. series are infrared emitting diodes in standard GaAs technology in a hermetically sealed TO–18 package. Their glass lenses provide a high radiant intensity without external optics.

TSTS 7102

Abstract: tsts 7103 TSTS7101 TSTS7100 TSTS7102 TSTS7103
Contextual Info: TSTS 710. TELEFUNKEN Semiconductors GaAs IR Emitting Diodes in Hermetically Sealed TO18 Case Description TSTS 710. series are infrared emitting diodes in standard GaAs technology in a hermetically sealed TO–18 package. Their glass lenses provide a very high radiant intensity without external

Contextual Info: DF N2 020 -6 PBSS5160PAP 60 V, 1 A PNP/PNP low VCEsat BISS transistor 23 January 2013 Product data sheet 1. General description PNP/PNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a leadless medium power DFN2020-6 (SOT1118) Surface-Mounted Device (SMD) plastic package.

Contextual Info: DF N2 020 -6 PBSS4130PAN 30 V, 1 A NPN/NPN low VCEsat BISS transistor 11 January 2013 Product data sheet 1. General description NPN/NPN low VCEsat Breakthrough In Small Signal (BISS) transistor in a leadless medium power DFN2020-6 (SOT1118) Surface-Mounted Device (SMD) plastic package.

Contextual Info: DF N2 020 -6 PBSS5230PAP 30 V, 2 A PNP/PNP low VCEsat BISS transistor 11 January 2013 Product data sheet 1. General description PNP/PNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a leadless medium power DFN2020-6 (SOT1118) Surface-Mounted Device (SMD) plastic package.

TSTA7100

Contextual Info: TSTA 7100 TELEFUNKEN Semiconductors GaAlAs IR Emitting Diode in Hermetically Sealed TO18 Case Description TSTA 7100 is a high efficiency infrared emitting diode in GaAlAs on GaAlAs technology in a hermetically sealed TO 18 package. Its glass lens provides a very high radiant intensity without

SI 7300

Abstract: 02-TP
Contextual Info: TSTA 7300 TELEFUNKEN Semiconductors GaAlAs IR Emitting Diode in Hermetically Sealed TO18 Case Description TSTA 7300 is a high efficiency infrared emitting diode in GaAlAs on GaAlAs technology in a hermetically sealed TO–18 package. Its glass lens provides a high radiant intensity without external

Contextual Info: TSTS730. Vishay Telefunken GaAs IR Emitting Diodes in Hermetically Sealed TO18 Case Description The TSTS730. series are infrared emitting diodes in standard GaAs technology in a hermetically sealed TO–18 package. Their glass lenses provide a high radiant intensity without external optics.

TSTS 7102

Abstract: TSTS710 TSTS7101 TSTS7100 TSTS7102 TSTS7103
Contextual Info: TSTS710. Vishay Telefunken GaAs IR Emitting Diodes in Hermetically Sealed TO18 Case Description TSTS710. series are infrared emitting diodes in standard GaAs technology in a hermetically sealed TO–18 package. Their glass lenses provide a very high radiant intensity without external optics.

DE1a-5V

Abstract: DE2a-12V DE1a1b-L-5V DE1a1b-L2-6V VDE0631 DE1a-L2-3V DE1a-12V DE1a1b-24V DE1a1b-5V DE1a1b-L-24V
Contextual Info: DE VDE COMPACT HIGH-INSULATION POLARIZED POWER RELAY DE RELAYS FEATURES 25.0 .984 • Conforms to VDE0631. Insulating distance between coil and contacts: Clearance Min. 8mm .315 inch Creepage distance Min. 8mm .315 inch 12.5 .492 12.5 .492 • Extensive product line-up.

Contextual Info: TSTS710. Vishay Telefunken GaAs IR Emitting Diodes in Hermetically Sealed TO18 Case Description TSTS710. series are infrared emitting diodes in standard GaAs technology in a hermetically sealed TO–18 package. Their glass lenses provide a very high radiant intensity without external optics.