MV TRANSISTOR SOT23 Search Results

MARKING 1F2

Abstract: ZXTP25020DFLTA TS16949 ZXTN25020DFL ZXTP25020DFL
Contextual Info: ZXTP25020DFL 20V, SOT23, PNP low power transistor Summary BVCEO > -20V BVECO > -4V IC cont = 1.5A VCE(sat) < 85 mV @ 1A RCE(sat) = 54m⍀ PD = 350mW Complementary part number ZXTN25020DFL Description C Advanced process capability has been used to achieve high current gain

marking 1A3

Abstract: ZXTN25020DFH ZXTP25020DFH ZXTP25020DFHTA
Contextual Info: ZXTP25020DFH 20V, SOT23, PNP medium power transistor Summary BVCEO > -20V BVECO > -4V IC cont = 4A VCE(sat) < 60 mV @ 1A RCE(sat) = 39 m⍀ PD = 1.25W Complementary part number ZXTN25020DFH Description C Advanced process capability and package design have been used to

marking 1a8

Abstract: ZXTN25015DFH ZXTN25015DFHTA ZXTP25015DFH ZXTN
Contextual Info: ZXTN25015DFH 15V, SOT23, NPN medium power transistor Summary BVCEX > 30V BVCEO > 15V BVECO > 4.5V IC cont = 5A VCE(sat) < 40 mV @ 1A RCE(sat) = 25 m⍀ PD = 1.25W Complementary part number ZXTP25015DFH Description C Advanced process capability and package design have been used to

ZXTN25020BFH

Abstract: ZXTN25020BFHTA ZXTP25020BFH
Contextual Info: ZXTN25020BFH 20V, SOT23, NPN medium power transistor Summary BVCEX > 50V BVCEO > 20V BVECO > 3V IC cont = 4.5A VCE(sat) < 45 mV @ 1A RCE(sat) = 27 m⍀ PD = 1.25W Complementary part number ZXTP25020BFH Description C Advanced process capability and package design have been used to

Zetex T 705

Abstract: ZXTN25020CFH ZXTN25020CFHTA ZXTP25020CFH TR88 ts266
Contextual Info: ZXTN25020CFH 20V, SOT23, NPN medium power transistor Summary BVCEX > 70V BVCEO > 20V BVECO > 5V IC cont = 4.5A VCE(sat) < 45 mV @ 1A RCE(sat) = 28 m⍀ PD = 1.25W Complementary part number ZXTP25020CFH Description C Advanced process capability and package design have been used to

865 IC marking

Abstract: ZXTN25060BFH ZXTN25060BFHTA ZXTP25060BFH h 033
Contextual Info: ZXTN25060BFH 60V, SOT23, NPN medium power transistor Summary BVCEX > 150V BVCEO > 60V BVECO > 6V IC cont = 3.5A VCE(sat) < 65 mV @ 1A RCE(sat) = 43 m⍀ PD = 1.25W Complementary part number ZXTP25060BFH Description C Advanced process capability and package design have been used to

ZXTN25040DFH

Abstract: ZXTN25040DFHTA ZXTP25040DFH
Contextual Info: ZXTN25040DFH 40V, SOT23, NPN medium power transistor Summary BVCEX > 130V BVCEO > 40V BVECO > 6V IC cont = 4A VCE(sat) < 55 mV @ 1A RCE(sat) = 35 m⍀ PD = 1.25W Complementary part number ZXTP25040DFH Description C Advanced process capability and package design have been used to

RBE 215 RELAY

Abstract: ZXTN25020DFH ZXTN25020DFHTA ZXTP25020DFH relay driver
Contextual Info: ZXTN25020DFH 20V SOT23 NPN medium power transistor Summary BVCEX > 100V; BV BR CEO > 20V BVECO > 5V; IC(CONT) = 4.5A RCE(sat) = 28 m⍀ typical VCE(sat) < 43 mV @ 1A; PD = 1.25W Complementary part number ZXTP25020DFH Description Advanced process capability and package design have been used to

ZXTN2018F

Abstract: ZXTN2018FTA ZXTP2027F marking 851
Contextual Info: ZXTN2018F 60V, SOT23, NPN medium power transistor Summary V BR CEV > 140V, V(BR)CEO > 60V IC(cont) = 5A RCE(sat) = 25 m⍀ typical VCE(sat) < 45 mV @ 1A PD = 1.2W Complementary part number : ZXTP2027F Description Advanced process capability and package design have been used to

CM12A

Abstract: br 2222 npn ZX5T651F
Contextual Info: ZX5T651F ADVANCED ISSUE SOT23 NPN SILICON 60V GENERATION 5 LOW SATURATION MEDIUM POWER TRANSISTOR SUMMARY V(BR)CE V / S / R > 150V V(BR)CEO > 60V Ic(cont) = 4A Rce(sat) = 31 m typical Vce(sat) < 60 mV @ 1A SOT23 DESCRIPTION FEATURES • • • • APPLICATIONS

transistor n53

Abstract: ZX5T653F h 033 Marking N53
Contextual Info: ZX5T653F ADVANCED ISSUE SOT23 NPN SILICON 100V GENERATION 5 LOW SATURATION MEDIUM POWER TRANSISTOR SUMMARY V(BR)CE V / S / R > 200V V(BR)CEO > 100V Ic(cont) = 3.5A Rce(sat) = 40 m typical Vce(sat) < 75 mV @ 1A SOT23 DESCRIPTION FEATURES • • • • APPLICATIONS

marking P53 transistor

Abstract: ZX5T753F
Contextual Info: ZX5T753F ADVANCED ISSUE SOT23 PNP SILICON 100V GENERATION 5 LOW SATURATION MEDIUM POWER TRANSISTOR SUMMARY V(BR)CE V / S / R > -120V V(BR)CEO > -100V Ic(cont) = -3A Rce(sat) = 77 m typical Vce(sat) < -110 mV @ -1A SOT23 DESCRIPTION FEATURES • • • •

marking P51 transistor

Abstract: ZX5T751F 1A SOT23
Contextual Info: ZX5T751F ADVANCED ISSUE SOT23 PNP SILICON 60V GENERATION 5 LOW SATURATION MEDIUM POWER TRANSISTOR SUMMARY V(BR)CE V / S / R > -80V V(BR)CEO > -60V Ic(cont) = -3.5A Rce(sat) = 40 m typical Vce(sat) < -80 mV @ -1A SOT23 DESCRIPTION FEATURES • • • •

OUTLINE DIMENSIONS in inche

Abstract: marking 951 12W MARKING sot23 ZXTN2018F ZXTP2027F ZXTP2027FTA
Contextual Info: ZXTP2027F 60V, SOT23, PNP medium power transistor Summary V BR CEV > -100V, V(BR)CEO > -60V IC(cont) = -4A RCE(sat) = 31 m⍀ typical VCE(sat) < -60 mV @ -1A PD = 1.2W Complementary part number: ZXTN2018F Description Advanced process capability and package design have been used to

TS16949

Abstract: ZXTN2018F ZXTP2027F ZXTP2027FTA
Contextual Info: ZXTP2027F 60V, SOT23, PNP medium power transistor Summary V BR CEV > -100V, V(BR)CEO > -60V IC(cont) = -4A RCE(sat) = 31 m⍀ typical VCE(sat) < -60 mV @ -1A PD = 1.2W Complementary part number ZXTN2018F Description C Advanced process capability and package design have been used to

Contextual Info: ZXTP2027F 60V, SOT23, PNP medium power transistor Summary V BR CEV > -100V, V(BR)CEO > -60V IC(cont) = -4A RCE(sat) = 31 m⍀ typical VCE(sat) < -60 mV @ -1A PD = 1.2W Complementary part number ZXTN2018F Description C Advanced process capability and package design have been used to

Contextual Info: FMMT459 500V Silicon NPN high voltage switching transistor Summary V BR CEV > 500V V(BR)ECV > 6V Ic(cont) = 150 mA Vce(sat) = 70 mV @ 50 mA Description This new high voltage transistor provides users with very efficient performance, combining low VCE(SAT) high Hfe to give extremely low on state losses at 500V operation, making it ideal for use

20MHZ

Abstract: FMMT459 FMMT459TA FMMT459TC npn high voltage transistor 500v sot23
Contextual Info: FMMT459 500V Silicon NPN high voltage switching transistor Summary V BR CEV > 500V V(BR)ECV > 6V Ic(cont) = 150 mA Vce(sat) = 70 mV @ 50 mA Description This new high voltage transistor provides users with very efficient performance, combining low VCE(SAT) high Hfe to give extremely low on state losses at 500V operation, making it ideal for use

Contextual Info: FMMT459 500V Silicon NPN high voltage switching transistor Summary V BR CEV > 500V V(BR)ECV > 6V Ic(cont) = 150 mA Vce(sat) = 70 mV @ 50 mA Description This new high voltage transistor provides users with very efficient performance, combining low VCE(SAT) high Hfe to give extremely low on state losses at 500V operation, making it ideal for use

vbe 10v, vce 500v NPN Transistor

Abstract: L 10M marking 20MHZ FMMT459 FMMT459TA FMMT459TC npn high voltage transistor 500v sot23 NPN VCEO 500V sot23
Contextual Info: FMMT459 500V Silicon NPN high voltage switching transistor Summary V BR CEV > 500V V(BR)ECV > 6V Ic(cont) = 150 mA Vce(sat) = 70 mV @ 50 mA Description This new high voltage transistor provides users with very efficient performance, combining low VCE(SAT) high Hfe to give extremely low on state losses at 500V operation, making it ideal for use

ZXTN25012EFL

Abstract: TS16949 ZXTN25012EFLTA
Contextual Info: ZXTN25012EFL 12V, SOT23, NPN low power transistor Summary BVCEO > 12V BVECO > 4.5V hFE > 500 IC cont = 2A VCE(sat) < 65 mV @ 1A RCE(sat) = 46 m⍀ PD = 350mW Description C Advanced process capability has been used to achieve high current gain hold up making this device ideal for applications requiring high pulse

TK70403

Abstract: TK70403MTB TOKO voltage regulators
Contextual Info: TK70403 1.03 V REGULATOR WITH ON/OFF SWITCH FEATURES APPLICATIONS • ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ Low Input Voltage Operation Single Battery Cell Internal PNP Transistor Internal Shutdown Control (Off Current, 0.1 µA max) Low Dropout Voltage [30 mV (typ.) at 2 mA]

4420 Transistor

Abstract: transistor b 622 pnp transistor d 640 Schottky Diode 40V 5A ZXTS1000E6 ZXTS1000E6TA ZXTS1000E6TC 0118 transistor High voltage fast switching power transistor pnp DSA003748
Contextual Info: ZXTS1000E6 12V PNP SILICON LOW SATURATION SWITCHING TRANSISTOR AND SCHOTTKY DIODE SUMMARY Transistor: VCEO=-12V, I C= -1.25A Schottky Diode: VR=40V; IC= 0.5A DESCRIPTION A PNP transistor and a Schottky Barrier diode contained in a single 6 leaded SOT23 package.

4420 Transistor

Abstract: Schottky Diode 40V 5A Schottky diode Die IR ZXTS1000E6 ZXTS1000E6TA ZXTS1000E6TC transistor MV sot23
Contextual Info: ZXTS1000E6 12V PNP SILICON LOW SATURATION SWITCHING TRANSISTOR AND SCHOTTKY DIODE SUMMARY Transistor: VCEO=-12V, I C= -1.25A Schottky Diode: VR=40V; IC= 0.5A DESCRIPTION A PNP transistor and a Schottky Barrier diode contained in a single 6 leaded SOT23 package.