MUTING AND SWITCHING APPLICATION Search Results

Contextual Info: 0 O Optical disc ICs Muting 1C for portable CD players o (0 CO o Q. O BA3124F The BA3124F is an IC developed for line output muting in portable CD players, and uses control pin switching to achieve line muting and to eliminate the dull thump that occurs when the power is turned on or off.

Contextual Info: STICK-ON SERIES Model ST-MA2 Muting Monitor Amplifier ANYWHERE YOU NEED. • • • • • • A Single Speaker Monitor Amplifier A Conferencing Monitor Amp A Monitor Amp with Muting and Externally Actuated Attenuation Steps Fast, Silent Audio Switching

PBSS4140

Abstract: PBSS4140T 417 278
Contextual Info: PBSS4140T 30 V Low VCE sat NPN Transistor FEATURES ․Low collector-emitter saturation voltage ․High current capabilities ․Improved device reliability due to reduced heat generation. APPLICATIONS ․General purpose switching and muting ․LCD backlighting

PBSS4140T

Contextual Info: ST PBSS4140T 30 V Low VCE sat NPN Transistor FEATURES ˙Low collector-emitter saturation voltage ˙High current capabilities ˙Improved device reliability due to reduced heat generation. APPLICATIONS ˙General purpose switching and muting ˙LCD backlighting

PBSS4140T

Contextual Info: ST PBSS4140T 30 V Low VCE sat NPN Transistor FEATURES ˙Low collector-emitter saturation voltage ˙High current capabilities ˙Improved device reliability due to reduced heat generation. APPLICATIONS ˙General purpose switching and muting ˙LCD backlighting

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Abstract: 2SC5233
Contextual Info: TOSHIBA 2SC5233 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL TYPE PCT PROCESS 2SC5233 GENERAL PURPOSE AMPLIFIER APPLICATIONS SWITCHING AND MUTING SWITCH APPLICATION Low Saturation Voltage Large Collector Current VCE (sat) (D = 15mV (TyP-) @ Iq = 10mA / Ig = 0.5mA

Contextual Info: SEMICONDUCTOR KRC231M~KRC235M TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR SWITCHING APPLICATION. AUDIO MUTING APPLICATION. INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION. A B O F FEATURES H ・With Built-in Bias Resistors. M G ・Simplify Circuit Design.

2SC5376FV

Contextual Info: 2SC5376FV TOSHIBA Transistor Silicon NPN Epitaxial Type 2SC5376FV Audio Frequency General Purpose Amplifier Applications For Muting and Switching Applications @IC = 10 mA/IB = 0.5 mA Characteristics Symbol Rating Unit Collector-base voltage VCBO 15 V Collector-emitter voltage

Contextual Info: MMBTSA2018 PNP Silicon Epitaxial Planar Transistor Low Frequency Transistor for switching and muting applications. Features: •A collector current is large. •Collector saturation voltage is low. SOT-23 Plastic Package -VCE sat : 250mV(Max.) at -IC=200mA/-IB=10mA

IC600

Abstract: NPN Silicon Epitaxial Planar Transistor
Contextual Info: MMBTRC231S NPN Silicon Epitaxial Planar Transistor For switching, audio muting, interface circuit and driver circuit applications Collector Base R1 Emitter SOT-23 Plastic Package Absolute Maximum Ratings Ta = 25 OC Parameter Symbol Value Unit Collector Base Voltage

2SA1955FV

Contextual Info: 2SA1955FV TOSHIBA Transistor Silicon PNP Epitaxial Type PCT process 2SA1955FV General Purpose Amplifier Applications Switching and Muting Switch Application 0.22±0.05 1 2 3 Symbol Rating Unit Collector-base voltage VCBO −15 V Collector-emitter voltage

2SC5938

Abstract: LOW FREQUENCY AMPLIFY APPLICATION SILICON NPN
Contextual Info: 〈SMALL-SIGNAL TRANSISTOR〉 2SC5938 FOR LOW FREQUENCY AMPLIFY APPLICATION SILICON NPN EPITAXIAL TYPE OUTLINE DRAWING DESCRIPTION Unit: : mm ISAHAYA 2SC5938 is a super mini package resin sealed silicon NPN epitaxial transistor for muting and switching. application

Contextual Info: 2SA1955F TOSHIBA Transistor Silicon PNP Epitaxial Type PCT process 2SA1955F General Purpose Amplifier Applications Switching and Muting Switch Application • Unit: mm Low saturation voltage: VCE (sat) (1) = −15 mV (typ.) @IC = −10 mA/IB = −0.5 mA

2SA1955

Contextual Info: 2SA1955 TOSHIBA Transistor Silicon PNP Epitaxial Type PCT process 2SA1955 General Purpose Amplifier Applications Switching and Muting Switch Application • Unit: mm Low saturation voltage: VCE (sat) (1) = −15 mV (typ.) @IC = −10 mA/IB = −0.5 mA •

toshiba h05

Contextual Info: TOSHIBA 2SC5232 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL TYPE PCT PROCESS 2SC5232 GENERAL PURPOSE AMPLIFIER APPLICATIONS Unit in mm SWITCHING AND MUTING SWITCH APPLICATION h0.5 • Low Saturation Voltage : V^ e (sat) (l) = 15mV(Typ.) @ Iq = 10mA / Ig = 0.5mA

2SA1954

Contextual Info: 2SA1954 TOSHIBA Transistor Silicon PNP Epitaxial Type PCT process 2SA1954 General Purpose Amplifier Applications Switching and Muting Switch Application • Unit: mm Low saturation voltage: VCE (sat) (1) = −15 mV (typ.) @IC = −10 mA/IB = −0.5 mA •

2SC5376

Contextual Info: 2SC5376 TOSHIBA Transistor Silicon NPN Epitaxial Type 2SC5376 Audio Frequency General Purpose Amplifier Applications For Muting and Switching Applications • Unit: mm Low collector saturation voltage: VCE sat (1) = 15 mV (typ.) @IC = 10 mA/IB = 0.5 mA •

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Abstract: 2SC5232
Contextual Info: TOSHIBA 2SC5232 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL TYPE PCT PROCESS 2SC5232 Unit in mm GENERAL PURPOSE AM PLIFIER APPLICATIONS SWITCHING AND MUTING SWITCH APPLICATION • + 0.5 Low Saturation Voltage : V ce (sat) (l) = 15mV(Typ.) @ Iq = 10mA / Ig = 0.5mA

2SC3326

Contextual Info: TOSHIBA 2SC3326 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL TYPE PCT PROCESS 2SC3326 Unit in mm FOR MUTING AND SWITCHING APPLICATIONS + 0.5 High Emitter-BaseVoltage : Ve b O ~ 25V (Min.) High Reverse hjrg : Reverse hjrg = 150 (Typ.) (VCE= —2V, IC = —4mA)

Contextual Info: 2SA1953 TOSHIBA 2 S A 1 953 TOSHIBA TRANSISTOR SILICON PNP EPITAXIAL TYPE PCT PROCESS Unit in mm GENERAL PURPOSE AMPLIFIER APPLICATIONS SWITCHING AND MUTING SWITCH APPLICATION *•0.5 Low Saturation Voltage VCE (sat) (D = - 15mV (TyP-) Large Collector Current

RN16J1

Contextual Info: RN16J1 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT Process RN16J1 Muting Applications Switching Applications Unit in mm z With built-in bias resistors z Simplify circuit design z Reduce a quantity of parts and manufacturing process Equivalent Circuit

2SC5376F

Contextual Info: 2SC5376F TOSHIBA Transistor Silicon NPN Epitaxial Type 2SC5376F Audio Frequency General Purpose Amplifier Applications For Muting and Switching Applications • Low Collector Saturation Voltage: VCE sat (1) = 15 mV (typ.) • High Collector Current: IC = 400 mA (max)

Contextual Info: 2SA1954 TOSHIBA Transistor Silicon PNP Epitaxial Type PCT process 2SA1954 General Purpose Amplifier Applications Switching and Muting Switch Application • Unit: mm Low saturation voltage: VCE (sat) (1) = −15 mV (typ.) @IC = −10 mA/IB = −0.5 mA •

Contextual Info: TOSHIBA 2SC5232 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL TYPE PCT PROCESS 2SC 5232 GENERAL PURPOSE AMPLIFIER APPLICATIONS SWITCHING AND MUTING SWITCH APPLICATION Low Saturation Voltage Large Collector Current VCE (sat) (D = 15mV (Typ.) @ I q = 10mA / Iß = 0.5mA