MURATA MW 20 PARAMETERS Search Results

RAYTHEON

Abstract: C17-C19
Contextual Info:   5D\WKHRQ&RPPHUFLDO OHFWURQLFV RMPA1901-53 PCS CDMA GaAs MMIC Power Amplifier Description Features The RMPA1901-53 is a monolithic high efficiency power amplifier for PCS CDMA applications. Performance parameters may be slightly adjusted by “tweaking” the off-chip matching components. The amplifier circuit design is

darlington pair transistor

Abstract: 6LF6 common collector amplifier circuit designing micro-x mhz ghz microwave GRM188R71E473K Amplifier SOT-89 c4 0603CS-33NX_LU SKY65014 sky65015-70lf transistor Common Base configuration
Contextual Info: APPLICATION NOTE Gain Block Bias Networks Introduction Skyworks gain block amplifiers are InGaP/GaAs HBT integrated circuits. They use a Darlington-pair transistor configuration with bias and feedback resistors properly selected to determine the gain, input and output impedances and bias parameters. A schematic representation of the amplifier is shown in Figure 1.

pin configuration of 8251

Abstract: C17-C19 PA1900 RMPA1901-53 MURATA MW
Contextual Info: RMPA1901-53 PCS CDMA GaAs MMIC Power Amplifier Description Features The RMPA1901-53 is a monolithic high efficiency power amplifier for PCS CDMA applications. Performance parameters may be slightly adjusted by “tweaking” the off-chip matching components. The amplifier circuit design

2SC9018

Abstract: z5u transistor Z5U diode 2sc9018 equivalent SL4X30MW100T 2sc9018 transistor
Contextual Info: AN602 S i4822/26/ 27/ 40/ 44 A N T E N N A, S C H E M A T I C, L A Y O U T, AND DESIGN GUIDELINES 1. Introduction This document provides general Si4822/26/27/40/44 design and AM/FM/SW antenna selection guidelines, including schematic, BOM, and PCB layout. All users should follow the Si4822/26/27/40/44 design guidelines

IS136

Abstract: TRF1500
Contextual Info: TRF1500 DUAL-BAND/DUAL-MODE PCS RECEIVER SLWS041A – JANUARY 1998 D D D D D Low-Noise Amplifier for Each Band RF Mixer for Each Band With Image Rejection Configuration for High Band IF Amplifier for Both Low and High Bands Operates From a Supply Voltage Range of

GRM36COG470J

Abstract: 0603HS3N9 GRM36COG101J 903-373j 0603HS-3N9TKBC 142-0701-801 GRM36cog IS136 TRF1500 SAFC881.5MA70N
Contextual Info: TRF1500 DUAL-BAND/DUAL-MODE PCS RECEIVER SLWS041A – JANUARY 1998 D D D D D Low-Noise Amplifier for Each Band RF Mixer for Each Band With Image Rejection Configuration for High Band IF Amplifier for Both Low and High Bands Operates From a Supply Voltage Range of

NESG250134

Contextual Info: NEC's NPN SiGe RF TRANSISTOR FOR MEDIUM OUTPUT POWER NESG250134 AMPLIFICATION 800 mW 3-PIN POWER MINIMOLD (34 PACKAGE) FEATURES • THIS PRODUCT IS SUITABLE FOR MEDIUM OUTPUT POWER (800 mW) AMPLIFICATION PO = 29 dBm TYP. @ VCE = 3.6 V, Pin = 15 dBm, f = 460 MHz

0603HS-10NTJBC

Abstract: 0603HS-68NTJBC GRM36COG470J IS136 TRF1500 LNA T20 GRM36cog GRM36COG100D
Contextual Info: TRF1500 DUAL-BAND/DUAL-MODE PCS RECEIVER SLWS041 – DECEMBER 1997 D D D D D Low-Noise Amplifier for Each Band RF Mixer for Each Band With Image Rejection Configuration for High Band IF Amplifier for Both Low and High Bands Operates From a Supply Voltage Range of

NESG250134

Abstract: NESG250134-AZ NESG250134-T1-AZ
Contextual Info: NEC's NPN SiGe RF TRANSISTOR FOR MEDIUM OUTPUT POWER NESG250134 AMPLIFICATION 800 mW 3-PIN POWER MINIMOLD (34 PACKAGE) FEATURES • THIS PRODUCT IS SUITABLE FOR MEDIUM OUTPUT POWER (800 mW) AMPLIFICATION PO = 29 dBm TYP. @ VCE = 3.6 V, Pin = 15 dBm, f = 460 MHz

BR 11052

Abstract: GRM36cog IS136 TRF1500 A 3 11052 lownoise t20 amphenol 24- 28 pf BR+11052
Contextual Info: TRF1500 DUAL-BAND/DUAL-MODE PCS RECEIVER SLWS041A – JANUARY 1998 D D D D D Low-Noise Amplifier for Each Band RF Mixer for Each Band With Image Rejection Configuration for High Band IF Amplifier for Both Low and High Bands Operates From a Supply Voltage Range of

Contextual Info: TRF1500 DUAL-BAND/DUAL-MODE PCS RECEIVER SLWS041A – JANUARY 1998 D D D D D Low-Noise Amplifier for Each Band RF Mixer for Each Band With Image Rejection Configuration for High Band IF Amplifier for Both Low and High Bands Operates From a Supply Voltage Range of

NESG250134

Contextual Info: DATA SHEET NPN SILICON GERMANIUM RF TRANSISTOR NESG250134 NPN SiGe RF TRANSISTOR FOR MEDIUM OUTPUT POWER AMPLIFICATION 800 mW 3-PIN POWER MINIMOLD (34 PACKAGE) FEATURES • This product is suitable for medium output power (800 mW) amplification PO = 29 dBm TYP. @ VCE = 3.6 V, Pin = 15 dBm, f = 460 MHz

Contextual Info: TRF1500 DUAL-BAND/DUAL-MODE PCS RECEIVER ^ • • • • _ SLWSQ41A-JANUARY 1998 Low-Noise Amplifier for Each Band RF Mixer for Each Band With Image Rejection Configuration for High Band IF Amplifier for Both Low and High Bands

TG-UTB01527S

Abstract: SL4X30MW100T si4844 2SC9018 SL8X50MW70T UMEC TG-UTB01526 SW9 357 TG-UTB01526 2sc9018 transistor 2sc9018 equivalent
Contextual Info: AN602 S i484 X - A A N TE N N A , S CHEMATIC , L AYOUT , A N D D E S I G N G UIDEL INES 1. Introduction This document provides general Si484x-A design and AM/FM/SW antenna selection guidelines, including schematic, BOM, and PCB layout. All users should follow the Si484x design guidelines presented in “2. Si484x-A

KDS0B

Abstract: kds-0b s150t
Contextual Info: TRF1500 DUAL-BAND/DUAL-MODE PCS RECEIVER SLWS041 - D ECE M B ER 1997 I • Low-Noise Amplifier for Each Band • • I • RF Mixer for Each Band With Image Rejection Configuration for High Band Suitable for Portable Dual-Band/Dual-Mode Cellular Telephones IS136

NESG250134

Abstract: NESG250134-AZ NESG250134-T1-AZ
Contextual Info: DATA SHEET NPN SILICON GERMANIUM RF TRANSISTOR NESG250134 NPN SiGe RF TRANSISTOR FOR MEDIUM OUTPUT POWER AMPLIFICATION 800 mW 3-PIN POWER MINIMOLD (34 PKG) FEATURES • This product is suitable for medium output power (800 mW) amplification PO = 29 dBm TYP. @ VCE = 3.6 V, Pin = 15 dBm, f = 460 MHz

Contextual Info: TRF3520 GSM RF MODULATOR/DRIVER AMPLIFIER SLW S060A -M AY 1998 Modulation and Upconversion from l/Q Baseband to RF on Single Chip Power Amplifier Driver Designed for GSM Portable Cellular Telephones 3.75-V Operation Internal VCO and SSB Mixer for Transmit

DIODE T3D 9D

Contextual Info: LM27341 , LM27342 , LM27341-Q1 , LM27342-Q1 www.ti.com SNVS497E – NOVEMBER 2008 – REVISED APRIL 2013 LM27341/LM27342/LM27341-Q1/LM27342-Q1 2 MHz 1.5A/2A Wide Input Range Step-Down DC-DC Regulator with Frequency Synchronization Check for Samples: LM27341 , LM27342 , LM27341-Q1 , LM27342-Q1

PA DRIVER AMPLIFIER

Abstract: schematics for a PA amplifier balun diode mixer "rf modulator" GRMx7r rf modulator datasheet FR10K GRM39COG TCM4400 TRF1020
Contextual Info: TRF3520 GSM RF MODULATOR/DRIVER AMPLIFIER SLWS060A – MAY 1998 D D D D Modulation and Upconversion from I/Q Baseband to RF on Single Chip Designed for GSM Portable Cellular Telephones Internal VCO and SSB Mixer for Transmit Carrier Generation Internal RF Filter for Minimal External Parts

3214W-1-103E

Abstract: DB-54003L-880 EEVHB1V100P EXCELDRC35C GRM42-6C0G102J50 PD54003L gP DIODE zener diode 5.1 v panasonic capacitor date codes
Contextual Info: DB-54003L-880 RF POWER AMPLIFIER USING 1 x PD54003L PRELIMINARY DATA N-CHANNEL ENHANCEMENT-MODE LATERAL MOSFETs Figure 1. Demo Board Picture GENERAL FEATURES • ■ ■ ■ ■ ■ ■ ■ EXCELLENT THERMAL STABILITY FREQUENCY 800 - 880 MHz SUPPLY VOLTAGE

FR10K

Abstract: GRM39COG TCM4400 TRF1020 TRF3520 SSB Modulator application note LL1608-FR10K GRMx7r S-PQFP-G48
Contextual Info: TRF3520 GSM RF MODULATOR/DRIVER AMPLIFIER SLWS060A – MAY 1998 D D D D Modulation and Upconversion from I/Q Baseband to RF on Single Chip Designed for GSM Portable Cellular Telephones Internal VCO and SSB Mixer for Transmit Carrier Generation Internal RF Filter for Minimal External Parts

GRM39COG

Abstract: FR10K TCM4400 TRF1020 TRF3520 SSB Modulator application note K3332 GRMx7r grm39cog capacitor
Contextual Info: TRF3520 GSM RF MODULATOR/DRIVER AMPLIFIER SLWS060A – MAY 1998 D D D D Modulation and Upconversion from I/Q Baseband to RF on Single Chip Designed for GSM Portable Cellular Telephones Internal VCO and SSB Mixer for Transmit Carrier Generation Internal RF Filter for Minimal External Parts

P220G

Contextual Info: TRF3520 GSM RF MODULATOR/DRIVER AMPLIFIER SLWS060A – MAY 1998 D D D D Modulation and Upconversion from I/Q Baseband to RF on Single Chip Designed for GSM Portable Cellular Telephones Internal VCO and SSB Mixer for Transmit Carrier Generation Internal RF Filter for Minimal External Parts

NESG250134

Abstract: NESG250134-AZ NESG250134-T1-AZ
Contextual Info: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid