MUM 84 Search Results

667 transistor ecb

Abstract: EVL32-060 A50L-0001-0109
Contextual Info: Mechanical Drawings All Dimensions in inches mm . AX-5W Case 106 .037(0.94) .043(1.09) .048(1.22) •053(1.35) 1.0(25.4) 1.0(25.4) MI NI MUM MI NI MUM 330(8.38) .340(8.64) .360(9.14) 350(8.89)! T T 130(3.30) _ 145(3.68) 340(8.64) . 3 60 ( 9. 1 4) r*1.0(25.4)

SCR TRANSISTOR

Abstract: TO92HS R/PCR 6061 triac CERSOT-23 sot89 diode bm scr 209
Contextual Info: Mechanical Drawings All Dimensions in inches mm . Case 106 AX-5W . 0 3 7 ( 0 . 9 4 ] . 0 4 3 ( 1 . 0 9 ] 1 . 0 ( 2 5 . 4 ) M I N I MUM 3 3 0 ( 8 . 3 8 ) 3 5 0 ( 8 . 8 9 ) 1 30(3 .30) 145 (3.68) 1 . 0 ( 2 5 . 4 ) MI NI MUM Case B-M Case A .20(5.1) .22(5.6)

cq303

Contextual Info: CATALOG LISTINO M I C R O S WI T CH SWITCH-ENCLOSED i mum or MMCimts-Mtfrwtu mum m m B Z V 6-2R Q 9^ F E D . M F R . CODE 9 1 9 2 9 ± .0 1 0 417 h* 21.1 72 DIA. H O L E - ± .0 3 0 0 t r CVJ 1 CO > N CD If Z y QZ 5 0 OIA. X ,18 WIDE H A R D E N E D S T E E L R O LL E R .

Contextual Info: CDLL6309 • ZENER DIODE •LEADLESS PACKAGE FOR SURFACE MOUNT thru • LOW REVERSE LEAKAGE CHARACTERISTICS CDLL6349 • LOW NOISE CHARACTERISTICS • DOUBLE PLUG CONSTRUCTION • METALLURGICALLY BONDED -1 MAX MUM RATINGS Junct on & Storage Tem perature:

Contextual Info: SERIES F Serie F Series F Coaxial connector with high mechanical and electrical stability for a maxi­ Koaxialsteckverbinder m it hoher elektrischer u nd m echanischer Stabifitat mum operating frequency of approx. 2 GHz. fu r eine m axim ale Betriebsfrequenz von ca. 2 GHz.

ATT21C498

Abstract: 22C498 AC176
Contextual Info: June 1995 - 3s MUM Microelectronics ATT20C408: 16-Bit Interface RAMDAC Dual Clock Synthesizers PrecisionDAC Technology Features Description • 170/135 MHz speed grades — 170 MHz 2:1 multiplex 8-bit pseudocolor — 73 MHz true-color operation The ATT20C408 CMOS RAMDAC provides the

BO-63

Contextual Info: DS1045 DALLAS SEMICONDUCTOR DS1045 4-Bit Dual Programmable Delay Line PIN ASSIGNMENT FEATURES • All-silicon time delay < o o [ 3 [ A1 [ A2 [ A3 [ GND [ 4 EA • Programmable via four input pins A0 • Programmable increments of 3 to 5 ns with a mini­ mum of 9 ns and a maximum of 84 ns

AN-808

Abstract: AN-847 AN-903 AN-979 EIA-485
Contextual Info: National Semiconductor Application Note 979 Todd Nelson March 1995 Introductlon mum configuration of two nodes; and with the full load of 32 nodes. The terms used in the specification are: VOA True output voltage with respect to ground This application note discusses the EIA-485 standard for

diode 1.5 ke 36 ca

Abstract: 40N160
Contextual Info: □IXYS High Voltage BIMOSFET M onolithic Bipolar MOS Transistor IXBH 40N140 IXBH 40N160 VCES ^C25 VCE sat tfi N-Channel, Enhancement Mode 1400/1600 V 33 A 7V 35 ns TO-247 AD Preliminary data Symbol Test Conditions Max mum Ratings 40N140 40N160 V CES

Contextual Info: TOSHIBA 2SC4840 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE 2SC484Q Unit in mm VHF-UHF BAND LOW NOISE AMPLIFIER APPLICATIONS. • Low Noise Figure, High Gain. N F = l.ldB , |S2 ie|2= 13dB f=lGHz MAXI MUM RATI NGS (Ta = 2 5°C) CHARACTERISTIC Collector-Base Voltage

Contextual Info: DESIGNED FOR USE WITH RG-188A/U FLEX CABLE CABLE ENTRY DIAMETER M IN I MUM FERRULE CONTACT H O U SIN G ELECTRICAL Nominal Impedance Ohms 50 Interface Dimensions MIL-STD-348A, Frequency Range (GHz) DC to MAX Operating Frequency of Cable per MIL-C-17 VSWR

Contextual Info: 3SK165 SONY GaAs N-Channel Dual-Gate MES FET Description The 3SK165 is a GaAs N -Channel D ual-G ate MES FET for low noise UHF amplifiers and mixers. Low noise and high gain characteristics are accomplished by opti­ mum mask pattern design. Easier high frequency circuit

Contextual Info: THIS DRAWING IS UNPUBLISHED. COPYRIGHT RELEASED FOR PUBLICATION - LOC . ALL RIGHTS RESERVED. BY TYCO ELECTRONICS CORPORATION. DIST REVISIONS CM 00 LTR DESCRIPTION w POST TO WI THSTAND IN BOTH DI RECTI ONS 1 3 NEWTONS 3 L B S MI NI MUM SHOWN WI THOUT DI SLODGI NG.

Contextual Info: ±.025 DESIGNED FOR USE WITH .085 S.R. CABLE ENTRY DIAMETER MINI MUM H O U SIN G CONTACT REVISIONS DESCRIPTION REV 01 ! 11R A ÎE <Z£P REVISED /PR O V ED 7J 11/10/97 . 089 . 037 'OSM" PLUG REF PLANE ELECTRICAL Nominal Impedance Ohms Frequency Range (GHz) DC to 12.4

IXGH30N30

Abstract: DIXYS
Contextual Info: DIXYS HIPerFAST IGBT IXGH30N30 VCES ^C25 V CE sat tfi = = = = 300 60 1.6 180 V A V ns P re lim in a ry d a ta Symbol Test Conditions V CES ^ Maxi mum Ratings = 25°C to 150°C 300 V = 25°C to 150°C; RGE = 1 M il 300 V Continuous ±20 V Transient ±30

LT015PD

Abstract: lt015
Contextual Info: LT015PD x I x x x x x x x x x x x x x x x x x x x 1 Features ● ● ● High output max[mum optical powe! output: 40 mW Wavelength. 830nm Single transverse mode Applications Optical disk memories Medical apparatus Optical floppy disks c Optical memory cards

das5v4

Abstract: das5v7 LM435 Densitron led densitron lm2261 LM2043 LM435 DENSITRON densitron lm24 LM780 el 803 s
Contextual Info: PENSITRON mum imm ENCE TION IDE DENSITRON ALPHANUMERIC CHARACTEFi MODULES SELECTION GUIDE Form at M odel # O verall Size W H D Viewinj 3Area Char. W H H eght TN +5|W H NTN +5 H STN +5 ± 5 1 H PAGE 1 Oct-92 B a cklig h t Type Suggested B acklight Inverter #

voice synthesis pwm

Abstract: NJU3811M-XX 64-nibble "Piezo Buzzer" 5v 1amx
Contextual Info: N JU 3 8 1 1 4-B IT SINGLE-CH WITH VOICE PR E L P MICROPROCESSOR SYNTHES IZER GENERAL DESCRIPTION M l NARY PACKAGE OUTLINE The NJU3811 is a C-MOS 4-bit single-chip micro­ processor with 6-bit PCM voice synthesizer,operated 2.4V mini mum. The microprocessor contains 1k-word ROM, 64-nibble RAM,

Contextual Info: <9H*> N J U 3 8 1 1 4-B IT SINGLE-CH WITH VOICE PR E L P MICROPROCESSOR SYNTHES IZER GENERAL DESCRIPTION The NJU3811 is a C-MOS 4-bit single-chip micro­ processor with 6-bit PCM voice synthesizer,operated 2.4V mini mum. The microprocessor contains 1k-word ROM, 64-nibble RAM,

1XFH32N50

Abstract: 1XFH 30n5
Contextual Info: H VDSS HiPerFET Power MOSFETs 500 V 500 V IXFH/IXFT 30N50 IXFH/IXFT 32N50 N-Channel Enhancement Mode Highdv/dt, Lowtrr, HDMOS™ Family D DS on 0.16 Q 0.15 Q ^D25 30 A 32 A t. < 250 ns Preliminary data Symbol Maxi mum Rati ngs Test Conditions V DSS T = 25°C to 150°C

Contextual Info: .312 REVISIONS DESCRIPTION DESIGNED FOR USE WITH HEX CABLE ENTRY DIAMETER MINI MUM H 0 U S ING CONTACT CM .500 MAX ACROSS CORNERS OF HEX. o .250-36, UN5-2A MODIFIED TO 0.240 ’O' RING REV .141 S/R MAX PANEL B . 145 . 0375 REVISED DATE APPROVED K.L m 7-24-96 8/7/96

Contextual Info: NOTES: MA T E R I A L : CONTACTS: SOLDER A R EF [.03947 TÏP I TABS: HOUSING: —X fieu i-z ALTERNATE: PPA D/MENS/ON APPLIES WHEN ACTUATOR IS IN CLOSED DIMENSION APPLIES WHEN ACTUATOR IS IN OP E N MAXI MUM Li — 6. A C T U AT OR ENGAGEMENT PACKAGE PER 7\ T O L E R A N C E

C17200

Abstract: C17300 ZZ-R-765
Contextual Info: REVISIONS DESCRIPTION DESIGNED FOR USE WITH REV .085 S.R. RG 40 5/U REF PLANE A1 REVISED PER ECO-11-005294 CABLE ENTRY DIAMETER M IN I MUM DATE APPROVED 13APR11 HMR .088 .021 HOUSING CONTACT OSM PLUG DIM NOTES: 1. PI CTORI AL VI EW IS AFTER CRI MPI NG 2. M IN S T R A IG H T CABLE LENG TH: . 1 7 5

Contextual Info: REVISIONS DESCRIPTION D E S IG N E D FOR U SE W IT H REV .141 DIA S/R CABLE 01 2 REDRAWN IN CAD PER ECN 98-0001 C A B LE EN T R Y D IA M E T E R M IN I MUM HOUSING CONTACT DATE APPROVED PATLAN mm Tic. .143 .036 RECOMMENDED MOUNTING HOLE ELECTRICAL Nominal Impedance Ohms