MULTI-EMITTER TRANSISTOR Search Results

MJE13003B

Contextual Info: WEITRON MJE13003B High Voltage Fast-switching NPN Power Transistor COLLECTOR 2. P b Lead Pb -Free 1. EMITTER 2. COLLECTOR 3. BASE 3. BASE DESCRIPTION: 1. EMITTER The device is manufactured using high voltage Multi Epitaxial Planar technology for high switching

SD1060

Contextual Info: SD1060 RF & MICROWAVE TRANSISTORS VHF - UHF APPLICATIONS Features • • • • • 400 MHz 28 VOLTS POUT = 5.0 WATTS GP = 4.7 dB MINIMUM COMMON EMITTER CONFIGURATION DESCRIPTION: This silicon epitaxial NPN planar high frequency transistor employs a multi emitter electrode design. This feature together

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Multi Chip Discrete XP0NG8A Silicon PNP epitaxial planar type (Tr) Silicon epitaxial planar type (SWD) 0.2±0.05 Parameter Symbol Collector-base voltage (Emitter open) VCBO Collector-emitter voltage

PS2532

Abstract: PS2532-1 LR7L
Contextual Info: HIGH COLLECTOR TO EMITTER VOLTAGE DARLINGTON TRANSISTOR E t 'lV 2’, '4d TYPE MULTI PHOTOCOUPLER SERIES Pi,ZS3ZL'1’ 4 FEATURES DESCRIPTION • HIGH ISOLATION VOLTAGE BV: 5 k Vr.m.s. MIN • HIGH COLLECTOR TO EMITTER VOLTAGE V c e o = 3 0 0 V MIN •

Contextual Info: Photocoupler SMD Type High Isolation Voltage High Collector To Emitter Voltage Type Sop Multi Photocoupler PS2703-1 SOP04 • Features Unit: mm ● High isolation voltage 4.5 MAX. ● High collector to emitter voltage 7.0±0.3 4.4 1.3 0.15+0.10 –0.05 ● High-speed switching

D44H11FP

Contextual Info: D44H11FP D45H11FP Complementary power transistors Features . • Low collector-emitter saturation voltage ■ Fast switching speed Applications ■ ■ Power amplifier 3 1 Switching circuits TO-220FP Description The devices are manufactured in low voltage multi

D44H8

Abstract: Part Marking TO-220 STMicroelectronics 4213 D44H11 D45H11 D45H8 ST MARKING to220
Contextual Info: D44H8 - D44H11 D45H8 - D45H11 Complementary power transistors Features . • Low collector-emitter saturation voltage ■ Fast switching speed TAB Applications ■ Power amplifier ■ Switching circuits 3 1 TO-220 Description The devices are manufactured in low voltage multi

2SB1205

Abstract: 2SB1143 2sc4675
Contextual Info: SAfÊYO LOW-SATURATI ON VOLTAGE TR SERI ES Small-Signal Transistors. NO. 2 (*)MBIT process technology "New manufacturing method,Multi Base Island Transistors” For PNP, (-) sign is omitted. *:Tc=25’C. #:Contains base to emitter resistance(RBE). Type No.

transistor A25 SMD

Abstract: smd transistor H-R
Contextual Info: Photocoupler SMD/DIP Type High Isolation Voltage Single Transistor Type Multi Photocoupler Series PS2501-1,-2,-4, PS2501L-1,-2,-4 Features High isolation voltage BV = 5 000 Vr.m.s. High collector to emitter voltage (VCEO = 80 V) High-speed switching (tr = 3

2sd1070

Contextual Info: SD1070 RF & MICROWAVE TRANSISTORS P RODUCT P REVIEW DESCRIPTION KEY FEATURES This silicon epitaxial NPN planar high frequency transistor employs a multi emitter electrode design. This feature together with a heavily diffused base matrix located between the individual emitters results in high RF

marking 1c

Abstract: smd 1C Transistors Diodes smd e2 smd diode marking 77 SMD MARKING E1 BC847S BC847S Application diode marking 1c E2 SMD Transistor KC847S
Contextual Info: Transistors SMD Type NPN Multi-Chip General Purpose Amplifier KC847S BC847S SOT-363 1.3 Unit: mm +0.1 -0.1 0.65 0.525 Features +0.15 2.3-0.15 +0.1 1.25-0.1 High current gain 0.36 Low collector-emitter saturation voltage +0.05 0.1-0.02 +0.05 0.95-0.05 0.1max

transistor A25 SMD

Abstract: rl 254 diode
Contextual Info: Photocoupler SMD/DIP Type High Isolation Voltage Single Transistor Type Multi Photocoupler Series PS2561-1,-2, PS2561L-1,-2 Features High isolation voltage BV = 5 000 Vr.m.s.: standard products BV = 3 750 Vr.m.s.: VDE0884 approved products Option High collector to emitter voltage (VCEO = 80 V)

NEC 2703

Abstract: PS2703-1-F3-A PS2703-1-V-F3 VDE0884 EN60747-5-2 M601 PS2703-1 PS2703-1-F3 PS2703-1-F4 PS2703-1-V
Contextual Info: PHOTOCOUPLER PS2703-1 HIGH ISOLATION VOLTAGE HIGH COLLECTOR TO EMITTER VOLTAGE TYPE −NEPOC SOP MULTI PHOTOCOUPLER Series− DESCRIPTION The PS2703-1 is an optically coupled isolator containing a GaAs light emitting diode and an NPN silicon phototransistor.

BFW17A

Abstract: BFW transistors BFW 100 BFW16A transistors BFW16A bfw16a-bfw17a bfw1 bfw 11
Contextual Info: BFW16A BFW17A CATV-MATV AMPLIFIERS DESCRIPTION The BFW 16A and BFW 17A are multi-emitter silicon planar epitaxial NPN transistors in Jedec TO-39 metal case, with extremely good intermodulation properties and high power gain. They are primarily intended for final and driver stages in channel-and

PS2533L-1-A

Abstract: BELL MOUTH EN60747-5-2 NL601 PS2533-1 PS2533L-1 PS2533L-1-E3 PS2533L-1-E4 VDE0884 ps2533
Contextual Info: PHOTOCOUPLER PS2533-1,PS2533L-1 HIGH COLLECTOR TO EMITTER VOLTATGE HIGH ISOLATION VOLTAGE MULTI PHOTOCOUPLER SIRIES −NEPOC Series− DESCRIPTION The PS2533-1 and PS2533L-1 are optically coupled isolators containing a GaAs light emitting diode and an NPN

PS2707-1

Abstract: PS2707-1-F3 PS2707-1-F4 PS2707-1-V VDE0884 K 4005 transistor
Contextual Info: PHOTOCOUPLER PS2707-1 AC INPUT RESPONSE HIGH COLLECTOR TO EMITTER VOLTAGE TYPE −NEPOC SOP MULTI PHOTOCOUPLER SERIES Series− DESCRIPTION The PS2707-1 is an optically coupled isolator containing a GaAs light emitting diode and an NPN silicon phototransistor.

transistor A4t 85

Abstract: 3b5 transistor transistor A4t 45 transistor A4t
Contextual Info: b5E D m VllDÔSb DQbSTBl 1T4 • PHIN PHILIPS INTERNATIONAL U.H.F. POWER TRANSISTOR N-P-N silicon planar epitaxial transistor primarily intended for use in mobile radio transmitters in the 470 MHz communications band. Features: • multi-base structure and emitter-ballasting resistors for an optimum temperature profile

Contextual Info: N AMER PHILIPS/DISCRETE blE D IAPX bbS3R31 002flflb2 7UH l BLU60/28 UHF POWER TRANSISTOR NPN silicon planar epitaxial transistor primarily intended for use in radio transmitters in the 470 MHz communications band. Features • Multi-base structure and emitter ballasting resistors for an optimum temperature profile

PS2732-1

Abstract: ps2732 PS2732-1-F3 PS2732-1-V PS2733-1 PS2733-1-A PS2733-1-F3 PS2733-1-V VDE0884
Contextual Info: PHOTOCOUPLER PS2732-1,PS2733-1 HIGH COLLECTOR TO EMITTER VOLTAGE SOP MULTI PHOTOCOUPLER −NEPOC Series− DESCRIPTION The PS2732-1 and PS2733-1 are optically coupled isolators containing a GaAs light emitting diode and an NPN silicon darlington-connected phototransistor.

ps2703

Contextual Info: DATA SHEET PHOTOCOUPLER PS2703-1 HIGH ISOLATION VOLTAGE HIGH COLLECTOR TO EMITTER VOLTAGE TYPE −NEPOC SOP MULTI PHOTOCOUPLER Series− DESCRIPTION The PS2703-1 is an optically coupled isolator containing a GaAs light emitting diode and an NPN silicon phototransistor.

t07 transistor

Contextual Info: N AMER PHILIPS/DISCRETE bTE D APX bbS3T31 0028832 T07 BLU30/28 • UHF POWER TRANSISTOR NPN silicon planar epitaxial transistor primarily intended for use in radio transmitters in the 470 MHz communications band. Features • Multi-base structure and emitter ballasting resistors for an optimum temperature profile

PS2535-1

Abstract: PS2535L-1 PS2535L-1-E3 PS2535L-1-E4 PS2535L-1-F3 PS2535L-1-F4 NEC TRANSISTOR MARKING CODE
Contextual Info: DATA SHEET PHOTOCOUPLER PS2535-1,PS2535L-1 HIGH COLLECTOR TO EMITTER VOLTAGE HIGH ISOLATION VOLTAGE MULTI PHOTOCOUPLER SERIES −NEPOC Series− DESCRIPTION The PS2535-1 and PS2535L-1 are optically coupled isolators containing a GaAs light emitting diode and an NPN

PS2703-1

Abstract: PS2703-1-F3 PS2703-1-F4 PS2703-1-V VDE0884 ps2703
Contextual Info: DATA SHEET PHOTOCOUPLER PS2703-1 HIGH ISOLATION VOLTAGE HIGH COLLECTOR TO EMITTER VOLTAGE TYPE −NEPOC SOP MULTI PHOTOCOUPLER Series− DESCRIPTION The PS2703-1 is an optically coupled isolator containing a GaAs light emitting diode and an NPN silicon phototransistor.

k 2545

Abstract: PS2707-1 PS2707-1-F3 PS2707-1-F4 PS2707-1-V VDE0884
Contextual Info: DATA SHEET PHOTOCOUPLER PS2707-1 AC INPUT RESPONSE HIGH COLLECTOR TO EMITTER VOLTAGE TYPE −NEPOC SOP MULTI PHOTOCOUPLER SERIES Series− DESCRIPTION The PS2707-1 is an optically coupled isolator containing a GaAs light emitting diode and an NPN silicon phototransistor.