MULTI EMITTER TRANSISTOR Search Results

MJE13003B

Contextual Info: WEITRON MJE13003B High Voltage Fast-switching NPN Power Transistor COLLECTOR 2. P b Lead Pb -Free 1. EMITTER 2. COLLECTOR 3. BASE 3. BASE DESCRIPTION: 1. EMITTER The device is manufactured using high voltage Multi Epitaxial Planar technology for high switching

SD1060

Contextual Info: SD1060 RF & MICROWAVE TRANSISTORS VHF - UHF APPLICATIONS Features • • • • • 400 MHz 28 VOLTS POUT = 5.0 WATTS GP = 4.7 dB MINIMUM COMMON EMITTER CONFIGURATION DESCRIPTION: This silicon epitaxial NPN planar high frequency transistor employs a multi emitter electrode design. This feature together

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Multi Chip Discrete XP0NG8A Silicon PNP epitaxial planar type (Tr) Silicon epitaxial planar type (SWD) 0.2±0.05 Parameter Symbol Collector-base voltage (Emitter open) VCBO Collector-emitter voltage

PS2532

Abstract: PS2532-1 LR7L
Contextual Info: HIGH COLLECTOR TO EMITTER VOLTAGE DARLINGTON TRANSISTOR E t 'lV 2’, '4d TYPE MULTI PHOTOCOUPLER SERIES Pi,ZS3ZL'1’ 4 FEATURES DESCRIPTION • HIGH ISOLATION VOLTAGE BV: 5 k Vr.m.s. MIN • HIGH COLLECTOR TO EMITTER VOLTAGE V c e o = 3 0 0 V MIN •

LM10

Contextual Info: Selection of MULTI-BEAM Components MULTI-BEAM sensors are made up of three components: scanner block, power block, and logic module. This is true for all MULTIBEAMs with the exception of opposed mode emitter units which require only a power block no logic module .

Contextual Info: Photocoupler SMD Type High Isolation Voltage High Collector To Emitter Voltage Type Sop Multi Photocoupler PS2703-1 SOP04 • Features Unit: mm ● High isolation voltage 4.5 MAX. ● High collector to emitter voltage 7.0±0.3 4.4 1.3 0.15+0.10 –0.05 ● High-speed switching

Contextual Info: 2SC6145A Audio Amplification Transistor Features and Benefits Description LAPT High frequency multi emitter transistor Small package (TO-3P) High power handling capacity, 160 W Improved sound output by reduced on-chip impedance Complementary to 2SA2223A

Contextual Info: 2SA2223A Audio Amplification Transistor Features and Benefits Description LAPT High frequency multi emitter transistor Small package (TO-3P) High power handling capacity, 160 W Improved sound output by reduced on-chip impedance Complementary to 2SC6145A

D44H11FP

Contextual Info: D44H11FP D45H11FP Complementary power transistors Features . • Low collector-emitter saturation voltage ■ Fast switching speed Applications ■ ■ Power amplifier 3 1 Switching circuits TO-220FP Description The devices are manufactured in low voltage multi

PS2832-1-F3

Abstract: PS2832-1 PS2832-1-F4 PS2832-4 PS2832-4-F3 PS2832-4-F4 PS2833-1 PS2833-1-F3 PS2833-4 PS2833-4-F3
Contextual Info: HIGH ISOLATION VOLTAGE HIGH COLLECTOR TO EMITTER VOLTAGE SOP MULTI OPTOCOUPLER PS2832-1,-4 PS2833-1,-4 FEATURES DESCRIPTION • HIGH COLLECTOR TO EMITTER VOLTAGE VCEO = 300 V : PS2832-1,-4 VCEO = 350 V : PS2833-1,-4 PS2832-1,-4 and PS2833-1,-4 are optically coupled isolators

Contextual Info: D44H11FP D45H11FP Complementary power transistors Preliminary data Features . • Low collector-emitter saturation voltage ■ Fast switching speed Applications ■ ■ Power amplifier 3 1 Switching circuits TO-220FP Description The devices are manufactured in low voltage multi

D44H8

Abstract: Part Marking TO-220 STMicroelectronics 4213 D44H11 D45H11 D45H8 ST MARKING to220
Contextual Info: D44H8 - D44H11 D45H8 - D45H11 Complementary power transistors Features . • Low collector-emitter saturation voltage ■ Fast switching speed TAB Applications ■ Power amplifier ■ Switching circuits 3 1 TO-220 Description The devices are manufactured in low voltage multi

Contextual Info: D44H8 - D44H11 D45H8 - D45H11 Complementary power transistors Features . • Low collector-emitter saturation voltage ■ Fast switching speed TAB Applications ■ Power amplifier ■ Switching circuits 1 3 TO-220 Description The devices are manufactured in low voltage multi

2N6277 applications

Contextual Info: SILICON MULTI-EPITAXIAL NPN TRANSISTOR 2N6277 • High VCEO. • High DC Current Gain, hFE. • Low Collector-Emitter Saturation Voltage, VCE sat . • • • • Fast Switching. Hermetic TO3 Metal package. Ideally suited for Power Amplifier and Switching Applications.

2SB1205

Abstract: 2SB1143 2sc4675
Contextual Info: SAfÊYO LOW-SATURATI ON VOLTAGE TR SERI ES Small-Signal Transistors. NO. 2 (*)MBIT process technology "New manufacturing method,Multi Base Island Transistors” For PNP, (-) sign is omitted. *:Tc=25’C. #:Contains base to emitter resistance(RBE). Type No.

2N6277

Abstract: 2N6277 applications NPN 250W LE17 180v 250w of transistor 2n6277
Contextual Info: SILICON MULTI-EPITAXIAL NPN TRANSISTOR 2N6277 • High VCEO. • High DC Current Gain, hFE. • Low Collector-Emitter Saturation Voltage, VCE sat . • • • • Fast Switching. Hermetic TO3 Metal package. Ideally suited for Power Amplifier and Switching Applications.

sanken audio

Abstract: sanken LAPT "Sanken Rectifiers" "Sanken Electric"
Contextual Info: 2SC6145 Audio Amplification Transistor Features and Benefits Description LAPT High frequency multi emitter transistor Small package (TO-3P) High power handling capacity, 160 W Improved sound output by reduced on-chip impedance For professional audio (PA) applications, VCEO = 260 V

Contextual Info: HIGH ISOLATION VOLTAGE AC INPUT RESPONSE TYPE MULTI OPTOCOUPLER SERIES DESCRIPTION_ FEATURES_ • HIGH ISOLATION VOLTAGE B V : 5000 Vr.m.s.: normal spec products • HIGH COLLECTOR TO EMITTER VOLTAGE Vceo:80 V MIN

MJ15003

Abstract: mj15003 equivalent CP176 multi emitter transistor
Contextual Info: PROCESS CP176 Central Power Transistor TM Semiconductor Corp. NPN - Amp/Switch Transistor Chip PROCESS DETAILS Process MULTI EPITAXIAL PLANAR Die Size 203 x 227 MILS Die Thickness 12.5 ± 1.0 MILS Base Bonding Pad Area 38 x 76 MILS Emitter Bonding Pad Area

transistor A25 SMD

Abstract: smd transistor H-R
Contextual Info: Photocoupler SMD/DIP Type High Isolation Voltage Single Transistor Type Multi Photocoupler Series PS2501-1,-2,-4, PS2501L-1,-2,-4 Features High isolation voltage BV = 5 000 Vr.m.s. High collector to emitter voltage (VCEO = 80 V) High-speed switching (tr = 3

2sd1070

Contextual Info: SD1070 RF & MICROWAVE TRANSISTORS P RODUCT P REVIEW DESCRIPTION KEY FEATURES This silicon epitaxial NPN planar high frequency transistor employs a multi emitter electrode design. This feature together with a heavily diffused base matrix located between the individual emitters results in high RF

mj15004

Abstract: CP576 multi emitter transistor
Contextual Info: PROCESS CP576 Central Power Transistor TM Semiconductor Corp. PNP - Amp/Switch Transistor Chip PROCESS DETAILS Process MULTI EPITAXIAL PLANAR Die Size 203 x 227 MILS Die Thickness 12.5 ± 1.0 MILS Base Bonding Pad Area 38 x 76 MILS Emitter Bonding Pad Area

marking 1c

Abstract: smd 1C Transistors Diodes smd e2 smd diode marking 77 SMD MARKING E1 BC847S BC847S Application diode marking 1c E2 SMD Transistor KC847S
Contextual Info: Transistors SMD Type NPN Multi-Chip General Purpose Amplifier KC847S BC847S SOT-363 1.3 Unit: mm +0.1 -0.1 0.65 0.525 Features +0.15 2.3-0.15 +0.1 1.25-0.1 High current gain 0.36 Low collector-emitter saturation voltage +0.05 0.1-0.02 +0.05 0.95-0.05 0.1max

Contextual Info: TPC6901A TOSHIBA Multi-Chip Transistor Silicon NPN / PNP Epitaxial Type TPC6901A High-Speed Switching Applications MOS Gate Drive Applications Unit: mm • NPN and PNP transistors are mounted on a compact and slim package. • High DC current gain • Low collector-emitter saturation voltage