MU MARKING CODE Search Results

A3 2S3

Contextual Info: NCN9252 High-Speed USB 2.0 480 Mbps DP3T Switch for USB/UART/Data Multiplexing http://onsemi.com Brief Description MARKING DIAGRAM 1 AD M G UQFN12 MU SUFFIX CASE 523AE AD = Specific Device Code M = Date Code G = Pb−Free Package APPLICATION DIAGRAM NCN9252

UDFN6

Contextual Info: NLSX5011 1-Bit 100 Mb/s Configurable Dual-Supply Level Translator http://onsemi.com MARKING DIAGRAMS M E ULLGA6, 1.2x1.0 BMX1 SUFFIX CASE 613AE E 1 ULLGA6, 1.45x1.0 AMX1 SUFFIX CASE 613AF M P M 1 1 1 UDFN6, 1.2 x 1.0 MU SUFFIX CASE 517AA UDFN6, 1.45 x 1.0

Contextual Info: NLSX5011 1-Bit 100 Mb/s Configurable Dual-Supply Level Translator http://onsemi.com MARKING DIAGRAMS M E ULLGA6, 1.2x1.0 BMX1 SUFFIX CASE 613AE E 1 ULLGA6, 1.45x1.0 AMX1 SUFFIX CASE 613AF M P M 1 1 1 UDFN6, 1.2 x 1.0 MU SUFFIX CASE 517AA UDFN6, 1.45 x 1.0

MC74VHC1G66DFT1G

Abstract: A114 A115 MC14066 MC74VHC1G66 MC74VHC4066 NLVHC1G66 UDFN6
Contextual Info: MC74VHC1G66, NLVHC1G66 SPST NO Normally Open Analog Switch MARKING DIAGRAMS 5 SC−88A DF SUFFIX CASE 419A V9 M G G 1 5 5 1 V9 M G G TSOP−5 DT SUFFIX CASE 483 1 VW M G 1 UDFN6 MU SUFFIX CASE 517AA Features • • • • • • • • http://onsemi.com

SAI SOT23

Contextual Info: SIEMENS PNP Silicon AF Transistors SMBTA 55 SMBTA 56 • High breakdown voltage • Low collector-emitter saturation voltage • Complementary types: SMBTA 05, SMBTA 06 NPN Type Marking Ordering Code (tape and reel) PinC Contigui•ation 1 2 3 Package1)

Contextual Info: SIEM EN S PNP Silicon Darlington Transistors • • For general AF applications High collector current • High current gain BCV 28 BCV 48 • Complementary types: BCV 29, BCV 49 NPN Type Marking Ordering Code (tape and reel) Pir Coni igurallion 1 2 3 4

Contextual Info: SIEMENS NPN Silicon Transistors SMBT 6428 SMBT 6429 • For AF input stages and driver applications • High current gain • Low collector-emitter saturation voltage Type Marking Ordering Code tape and reel Pin Configuration 1 2 3 Package1) SMBT 6428 SMBT 6429

ON Semiconductor marking 821

Contextual Info: SIEMENS BCR 583 PNP Silicon Digital Transistor >Switching circuit, inverter, interface circuit, driver circuit • Built in bias resistor R1=10ki2,R2=10kS2 Type Marking Ordering Code Pin Configuration BCR 583 XMs 1=B Q62702-C2385 Package 2=E 3=C SOT-23 Maximum Ratings

OFL-12

Abstract: SFZ-3A jds optics switch 1 Seiko fc electronic passive components catalog sii Product Catalog
Contextual Info: Fiber Optics Product Catalog Components Headquaters Product Catalog CMOS IC Quartz Crystals Micro Batteries Fiber Optics MATERIALS Liquid Crystal Display Custom LCD Module The optical communications technology of the next generation will be of increasing importance and extremely

afe 1000

Abstract: BSP 17 D AFE1000
Contextual Info: SIEMENS PNP Silicon Darlington Transistors BSP 60 . BSP 62 • High collector current • Low collector-emitter saturation voltage • Complementary types: BSP 50 . BSP 52 NPN Type Marking Ordering Code (tape and reel) Piti Con) igurat ion 1 2 3 4 Package1*

Contextual Info: SIEMENS NPN Silicon Switching Transistor SXT 3904 • High current gain: 0.1 mA to 100 mA • Low collector-emitter saturation voltage Type Marking Ordering Code tape and reel PinC^onfigu ration 1 2 3 Package1) SXT 3904 1A Q68000-A8396 B SOT-89 C E Maximum Ratings

Contextual Info: LESHAN RADIO COMPANY, LTD. Common Cathode Silicon Dual Switching Diode LM1MA141WKT1G LM1MA142WKT1G This Common Cathode Silicon Epitaxial Planar Dual Diode is designed for use in ultra high speed switching applications. This device is housed in the SC-70 package which is designed for low power surface mount applications.

PFMU.075.2

Contextual Info: FUSES / SICHERUNGEN Resettable fuses PFMU PF MU .02 0.2 PF MU .03 5.2 PF MU .05 PF 0.2 MU .07 5.2 PF MU .11 0.2 PF MU .00 5.2 2,8 x 3,4 mm fast tripping Packaged per EIA 481-1 PF MU .01 0.2 Typical Time to Trip at 23 ˚C Surface Mount PTC-Fuses Type PFMU 100

Contextual Info: LESHAN RADIO COMPANY, LTD. Common Cathode Silicon Dual Switching Diode LM1MA141WKT1G LM1MA142WKT1G This Common Cathode Silicon Epitaxial Planar Dual Diode is designed for use in ultra high speed switching applications. This device is housed in the SC-70 package which is designed for low power surface mount applications.

LM1MA142WKT1G

Contextual Info: LESHAN RADIO COMPANY, LTD. Common Cathode Silicon Dual Switching Diode This Common Cathode Silicon Epitaxial Planar Dual Diode is designed for use in ultra high speed switching applications. This device is housed in the SC-70 package which is designed for low power surface mount applications.

ATEX1160

Abstract: 97D2250
Contextual Info: Process Interface PI-NAM/RNO NAMUR Switching Amplifier Non-Ex Process Interface Interface cabinet Marshalling (Routing) cabinet The innovative interface system for process engineering Two switch cabinets in one Modular terminal blocks Process engineering systems are characterized by a

Contextual Info: SIEMENS NPN Silicon High-Voltage Transistor BFN 20 • Suitable for video output stages in TV sets and switching power supplies • High breakdown voltage • Low collector-emitter saturation voltage • Low capacitance • Complementary type: BFN 21 PNP

GENERAL SEMICONDUCTOR MARKING mJ SMA ED

Abstract: kvp 62a kvp 82a GFM 51A S4 68A GENERAL SEMICONDUCTOR MARKING SJ SMA 6V8C BFM 62A kvp 75a GFM 16A
Contextual Info: PPD Marking Vishay Semiconductors formerly General Semiconductor Axial Marking GS Part Number Cathode Band GP15M 0308 GS Part Number 1N4005 GP 0308 GP15M Logo/Date Code GS Logo Subject to Change Polarity Cathode Band 1N4005/Logo (GS Logo Subject to Change)

TV-5 18VDC

Abstract: FTR-K1CK012W FTR-K1AK028T TV-5120VAC CK005
Contextual Info: FTR-K1 SERIES POWER RELAY 1 POLE - 16A LOW PROFILE TYPE RoHS compliant FTR-K1 Series n FEATURES Low profile height: 15.7mm l HIGH ISOLATION5 Insulation Distance (between coil and contacts: 10mm min.) Dielectric strength: 5KV Surge strength: 10KV l Class F coil

mpp schematic

Abstract: LPT-3535-100LA LPT-3535-101LA LPT-3535-150LA LPT-3535-1R0LA LPT-3535-1R5LA LPT-3535-250LA LPT-3535-2R5LA LPT-3535-330LA LPT-3535-3R3LA
Contextual Info: LPT-3535-xxxLA, LB, LC Vishay Dale Inductors/Transformers Customizable, Surface Mount Torodial, Kool Mu *, Powdered Iron and MPP Cores FEATURES • Toroidal design for minimal EMI radiation in DC to DC converter applications • Designed to support the growing need for efficient DC to DC

Contextual Info: SIEMENS PNP Silicon Switching Transistor SMBT 4126 • High current gain: 0.1 mA to 100 mA • Low collector-emitter saturation voltage Type Marking Ordering Code tape and reel Pin Configuration 1 2 3 Package1) SMBT 4126 sC3 Q68000-A8549 B SOT-23 E C Maximum Ratings

M1MA142WKT1

Abstract: dual reverse diode
Contextual Info: LESHAN RADIO COMPANY, LTD. Common Cathode Silicon Dual Switching Diode M1MA141WKT1 M1MA142WKT1 This Common Cathode Silicon Epitaxial Planar Dual Diode is designed for use in ultra high speed switching applications. This device is housed in the SC-70 package which is designed for low power surface mount applications.

34068

Abstract: LPT-3535 kool mu mpp schematic
Contextual Info: LPT-3535 Vishay Dale Inductors/Transformers Customizable, Surface Mount Torodial, Kool Mu *, Powdered Iron and MPP Cores FEATURES • Toroidal design for minimal EMI radiation in DC to DC converter applications • Designed to support the growing need for efficient DC to DC

kool mu

Abstract: 34069 LPT4545ER101LM Kool pad LPT4545 LPT4545ER151LK LPT-4545
Contextual Info: LPT-4545 Vishay Dale Inductors/Transformers, Customizable, Surface Mount Torodial, Kool Mu *, Powdered Iron and MPP Cores FEATURES • Toroidal design for minimal EMI radiation in DC to DC converter applications • Designed to support the growing need for efficient DC to DC converters in