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2305 SOT-23 Abstract: MTP2305N3 MTP2305N UA740 te2305 te 2305 Contextual Info: Spec. No. : C417N3 Issued Date : 2007.07.27 Revised Date : Page No. : 1/6 CYStech Electronics Corp. P-CHANNEL Enhancement Mode MOSFET MTP2305N3 Features • VDS=-20V RDS ON =65mΩ@VGS=-4.5V, IDS=-4.2A RDS(ON)=100mΩ@VGS=-2.5V, IDS=-2A • Advanced trench process technology	Original	C417N3 MTP2305N3 OT-23 OT-23 UL94V-0 2305 SOT-23 MTP2305N3 MTP2305N UA740 te2305 te 2305	PDF

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2305 SOT-23

Abstract: MTP2305N3 MTP2305N UA740 te2305 te 2305
Contextual Info: Spec. No. : C417N3 Issued Date : 2007.07.27 Revised Date : Page No. : 1/6 CYStech Electronics Corp. P-CHANNEL Enhancement Mode MOSFET MTP2305N3 Features • VDS=-20V RDS ON =65mΩ@VGS=-4.5V, IDS=-4.2A RDS(ON)=100mΩ@VGS=-2.5V, IDS=-2A • Advanced trench process technology

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C417N3 MTP2305N3 OT-23 OT-23 UL94V-0 2305 SOT-23 MTP2305N3 MTP2305N UA740 te2305 te 2305

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