JMSL1009PK
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Jiangsu JieJie Microelectronics Co Ltd
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N-channel Power SGT MOSFET JMSL1009PK with 100V drain-source voltage, 88A continuous drain current, 5.8mΩ typical RDS(ON) at VGS=4.5V, and 2500pcs per reel packaging in TO-252-3L. |
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JMSL1008AC
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Jiangsu JieJie Microelectronics Co Ltd
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100V N-channel Power MOSFET with 6.5 mΩ typical RDS(ON) at VGS = 10V, 114A continuous drain current, available in TO-220-3L and TO-263-3L packages, suitable for power management and motor driving applications. |
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JMSL1008AKQ
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Jiangsu JieJie Microelectronics Co Ltd
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100V N-channel Power MOSFET in TO-252-3L package with 6.7 mΩ typical RDS(ON) at 10V VGS, 98A continuous drain current, low gate charge, and AEC-Q101 qualified for automotive applications. |
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JMSL1009AK
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Jiangsu JieJie Microelectronics Co Ltd
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100 V N-Ch Power MOSFET in TO-252-3L package with 7.8 mΩ typical RDS(ON) at VGS = 10V, 78 A continuous drain current, low gate charge, and designed for power management, motor driving, and switching applications. |
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JMSL1008AK
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Jiangsu JieJie Microelectronics Co Ltd
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100V N-channel Power MOSFET in TO-252-3L package with 6.7 mΩ RDS(ON) at VGS = 10V, 82A continuous drain current, low gate charge, and 1.7 Ω gate resistance, suitable for power management and motor driving applications. |
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JMSL1006AK
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Jiangsu JieJie Microelectronics Co Ltd
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100V N-channel Power MOSFET in TO-252-3L package with 5.4 mΩ typical RDS(ON) at VGS = 10V, 99A continuous drain current, low gate charge, and designed for power management, motor driving, and switching applications. |
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JMSL1005PG
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Jiangsu JieJie Microelectronics Co Ltd
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100V, 128A, 4.3mΩ N-channel Power SGT MOSFET in PDFN5x6-8L package with low on-resistance and gate charge, suitable for power management and load switching applications. |
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JMSL1008AP
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Jiangsu JieJie Microelectronics Co Ltd
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100V N-channel Power MOSFET in SOP-8L package with 7.4 mΩ RDS(ON) at VGS = 10V, 12A continuous drain current, low gate charge, and ultra-low on-resistance for power management and motor driving applications. |
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JMSL1004RG
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Jiangsu JieJie Microelectronics Co Ltd
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100V, 98A, 4.1mΩ N-channel Power SGT MOSFET in PDFN5x6-8L package with low on-resistance, high current capability, and optimized gate charge for power management and load switch applications. |
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JMSL1008AGQ
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Jiangsu JieJie Microelectronics Co Ltd
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100V N-Ch Power MOSFET in PDFN5x6-8L package with 6.0 mΩ typical RDS(ON) at VGS = 10V, 88A continuous drain current, low gate charge, and AEC-Q101 qualification for automotive applications. |
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JMSL1008AE
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Jiangsu JieJie Microelectronics Co Ltd
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100V N-channel Power MOSFET with 6.5 mOhm typical RDS(on) at 10V VGS, 114A continuous drain current, low gate charge, and available in TO-220-3L and TO-263-3L packages. |
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