MSG33001 Search Results

MSG33001

Contextual Info: Transistors MSG33001 SiGe HBT type For low-noise RF amplifier Unit: mm 0.10+0.05 –0.02 0.33+0.05 –0.02 • Features 5˚ 0.80±0.05 1.20±0.05 • Compatible between high breakdown voltage and high cutoff frequency • Low-noise, high-gain amplification

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors MSG33001 SiGe HBT type For low-noise RF amplifier Unit: mm 0.33+0.05 –0.02 • Features 0.10+0.05 –0.02 5˚ 1.20±0.05 0.80±0.05 • Compatible between high breakdown voltage and high cutoff frequency

MSG33001

Contextual Info: Transistors MSG33001 SiGe HBT type For low-noise RF amplifier Unit: mm 0.10+0.05 –0.02 0.33+0.05 –0.02 • Features 5˚ 0.80±0.05 1.20±0.05 • Compatible between high breakdown voltage and high cutoff frequency • Low-noise, high-gain amplification

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors MSG33001 SiGe HBT type For low-noise RF amplifier Unit: mm 0.33+0.05 –0.02 • Features 0.10+0.05 –0.02 5˚ 1.20±0.05 0.80±0.05 • Compatible between high breakdown voltage and high cutoff frequency

MSG33001

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors MSG33001 SiGe HBT type For low-noise RF amplifier Unit: mm M Di ain sc te on na tin nc ue e/ d 0.33+0.05 –0.02 • Features 0.10+0.05 –0.02 1.20±0.05 2 0.15 min. 1 0.23+0.05 –0.02

MIP2F3

Abstract: MIP2F4 MIP382 MIP2E7DMY mip2f2 mip291 MIP414S MIP2E5DMY mip411 MIP3E3SMY equivalent
Contextual Info: 2009 ver.2 Semiconductor Selection Guide Microcomputers, Bipolar ICs, Discrete Semiconductors Caution for Safety „ This product contains Gallium Arsenide GaAs . DANGER GaAs powder and vapor are hazardous to human health if inhaled or ingested. Do not burn, destroy, cut, cleave off, or chemically dissolve the

2sc5929

Abstract: MN1280 TRANSISTOR 2SC5929 3SK129 3SK97 2sc5928 2PG009 2SC5929 equivalent 2sk4000 2sd965 TRANSISTOR REPLACEMENT GUIDE
Contextual Info: 2009 Discrete Semiconductors Selection Guide Request for your special attention and precautions in using the technical information and semiconductors described in this book 1 If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and

transistor marking 7D

Contextual Info: Transistors MSG36E31 SiGe HBT type For low-noise RF amplifier • Features Unit: mm • Compatible between high breakdown voltage and high cut-off frequency • Low noise, high-gain amplification • Two elements incorporated into one package Each transistor is separated

Contextual Info: Transistors MSG36E41 SiGe HBT type For low-noise RF amplifier • Features Unit: mm • Compatible between high breakdown voltage and high cut-off frequency • Low noise, high-gain amplification • Two elements incorporated into one package Each transistor is separated

SiGE HBT

Abstract: V 027
Contextual Info: New Strike a balance between high breakdown voltage and high cut-off frequency. High breakdown voltage SiGe HBT for general RF use „ Overview Excellent high-frequency performance and high breakdown voltage have been achieved by using the 0.25µm SiGe HBT.

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors MSG36E41 SiGe HBT type For low-noise RF amplifier • Features Unit: mm • Compatible between high breakdown voltage and high cut-off frequency • Low noise, high-gain amplification

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors MSG36E31 SiGe HBT type For low-noise RF amplifier • Features Unit: mm • Compatible between high breakdown voltage and high cut-off frequency • Low noise, high-gain amplification

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors MSG36E41 SiGe HBT type For low-noise RF amplifier • Features Unit: mm • Compatible between high breakdown voltage and high cut-off frequency • Low noise, high-gain amplification

2SC5936

Abstract: 2SC6073 PANASONIC TRANSISTOR 2SC6073 2sc5929 MN1280 transistor 2SC6073 2SC5936 equivalent 2SC6074 TRANSISTOR 2SC5929 2sc5928
Contextual Info: 2009 ver.2 Discrete Semiconductors Selection Guide Request for your special attention and precautions in using the technical information and semiconductors described in this book 1 If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and

MSG33001

Abstract: MSG33004 MSG36E41
Contextual Info: Transistors MSG36E41 SiGe HBT type For low-noise RF amplifier • Features Unit: mm • Compatible between high breakdown voltage and high cut-off frequency • Low noise, high-gain amplification • Two elements incorporated into one package Each transistor is separated

transistor marking 7D

Contextual Info: Transistors MSG36E31 SiGe HBT type For low-noise RF amplifier • Features Unit: mm • Compatible between high breakdown voltage and high cut-off frequency • Low noise, high-gain amplification • Two elements incorporated into one package Each transistor is separated

MSG33001

Abstract: common collector amplifier circuit designing MSG33003 MSG36E31
Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors MSG36E31 SiGe HBT type For low-noise RF amplifier • Features Unit: mm • Compatible between high breakdown voltage and high cut-off frequency • Low noise, high-gain amplification

MSG33001

Abstract: MSG33004 MSG36E41
Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors MSG36E41 SiGe HBT type For low-noise RF amplifier • Features Unit: mm • Compatible between high breakdown voltage and high cut-off frequency • Low noise, high-gain amplification

MSG33001

Abstract: MSG33003 MSG36E31
Contextual Info: Transistors MSG36E31 SiGe HBT type For low-noise RF amplifier • Features Unit: mm • Compatible between high breakdown voltage and high cut-off frequency • Low noise, high-gain amplification • Two elements incorporated into one package Each transistor is separated

F-5040

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors MSG36E31 SiGe HBT type For low-noise RF amplifier • Features Unit: mm • Compatible between high breakdown voltage and high cut-off frequency • Low noise, high-gain amplification

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors MSG36E41 SiGe HBT type For low-noise RF amplifier • Features Unit: mm • Compatible between high breakdown voltage and high cut-off frequency • Low noise, high-gain amplification

mip411

Abstract: MIP2F4 MIP2F3 AN12947a mip2f2 MIP2F20MS MIP2F40MS mip2e7dmy panasonic inverter dv 700 manual mip291
Contextual Info: 2009 ver.2 Semiconductor Selection Guide Microcomputers, Bipolar ICs, Discrete Semiconductors Caution for Safety „ This product contains Gallium Arsenide GaAs . DANGER GaAs powder and vapor are hazardous to human health if inhaled or ingested. Do not burn, destroy, cut, cleave off, or chemically dissolve the