MS-012-AA ISSUE C Search Results

jedec MS-012-AA

Contextual Info: Plastic Packages for Integrated Circuits Small Outline Plastic Packages SOIC M8.15 (JEDEC MS-012-AA ISSUE C) N INDEX AREA 8 LEAD NARROW BODY SMALL OUTLINE PLASTIC PACKAGE 0.25(0.010) M H B M INCHES E SYMBOL -B1 2 3 L SEATING PLANE -A- A D h x 45° -C- e

jedec MS-012-AA

Abstract: MS-012-AA ISSUE C MS-012-AA
Contextual Info: Plastic Packages for Integrated Circuits Small Outline Plastic Packages SOIC M8.15 (JEDEC MS-012-AA ISSUE C) 8 LEAD NARROW BODY SMALL OUTLINE PLASTIC PACKAGE N INDEX AREA H 0.25(0.010) M B M E INCHES -B- 1 2 SYMBOL 3 L SEATING PLANE -A- h x 45o A D -C- e

lk 46

Abstract: jedec 64-pin simm
Contextual Info: SYS32128ZK/LK - 010/012/015/017 ISSUE 1.3 January 1999 128K x 32 SRAM MODULE SYS32128ZK/LK - 010/012/015/017 11403 West Bernado Court, Suite 100, San Diego, CA 92127. Tel No: 619 674 2233, Fax No: (619) 674 2230 Issue 1.3 : January 1999 Description Features

39f010

Abstract: 39f020 39F040 PM39F010-70JC PM39F040 39f0 555H A103 A114 A115
Contextual Info: PMC Pm39F010 / Pm39F020 / Pm39F040 1 Mbit / 2 Mbit / 4 Mbit 5 Volt-only CMOS Flash Memory FEATURES • Single Power Supply Operation - Low voltage range: 4.5 V - 5.5 V • Automatic Erase and Byte Program - Typical 16 µs/byte programming time - Typical 55 ms sector/block/chip erase time

39f020

Abstract: 39F010 39F040 555H A103 A114 A115
Contextual Info: PMC Pm39F010 / Pm39F020 / Pm39F040 1 Mbit / 2 Mbit / 4 Mbit 5 Volt-only CMOS Flash Memory FEATURES • Single Power Supply Operation - Low voltage range: 4.5 V - 5.5 V • Automatic Erase and Byte Program - Typical 16 µs/byte programming time - Typical 55 ms sector/block/chip erase time

Contextual Info: Pm39F010 / Pm39F020 / Pm39F040 1 Mbit / 2 Mbit / 4 Mbit 5 Volt-only CMOS Flash Memory FEATURES • Single Power Supply Operation - Low voltage range: 4.5 V - 5.5 V • Automatic Erase and Byte Program - Typical 16 µs/byte programming time - Typical 55 ms sector/block/chip erase time

Contextual Info: MOSAIC S E M I C O N D U C T O R INC LIE ]> h 35337•= D D G n ? 2 QbT * M O C 128K X 8 SRAM Module moXaic PUMA 67S4000-85/10/12 Issue 1.0 : January 1993 ADVANCE PRODUCT INFORMATION Mosaic Semicondu x- \

Contextual Info: HM5164160 Series HM5165160 Series 64 M FP DRAM 4-Mword x 16-bit 8 k Refresh/4 k Refresh HITACHI ADE-203-810A (Z) Preliminary Rev. 0.1 Nov. 1997 Description The Hitachi H M 5164160 Series, H M 5165160 Series are 64M -bit dynamic RAMs organized as 4,194,304w ord X 16-bit. They have realized high perform ance and low pow er by em ploying CMOS process

790n

Abstract: 846C NTLTD7900N NTLTD7900NR2G
Contextual Info: NTLTD7900N Power MOSFET 8.5 A, 20 V, Logic Level, N−Channel Micro8] Leadless EZFETs are an advanced series of Power MOSFETs which contain monolithic back−to−back zener diodes. These zener diodes provide protection against ESD and unexpected transients. These

1N589

Abstract: IN5809 1v500 1M5811 JANTX 1N5811 DIODE 1N5804 1N5896 j 5804 ns802 1N5809 equivalent
Contextual Info: MIL SPECS 44E » The documentation and proc*»» conversion m w r M necessary to comply with this revision shall be completed by 25 Apr 93. • □□□□155 0032612 7 ■ M I L S 1- 1 IINCH-POUNDj I . — I | j j ML-S-19S00/477B 25 January 1993

5165165

Abstract: 1729T
Contextual Info: HM5164165 Series HM5165165 Series 64M EDO DRAM 4-Mword x 16-bit 8k Refresh/4k Refresh HITACHI ADE-203-802A(Z) Preliminary Rev. 0.1 Oct. 24, 1997 Description The Hitachi H M 5164165 Series, H M 5165165 Series are 64M -bit dynamic RAMs organized as 4,194,304w ord X 16-bit. They have realized high perform ance and low pow er by em ploying CMOS process

HM514280AJ7

Abstract: m514280 hm514280 HM514280AJ8 HM514280AZ8 hm514280altt HM514280ALJ8 hm514280aj M514 HM514280AL
Contextual Info: H M 5 1 4 2 8 0 A /A L S e rie s Preliminary H M 5 1 S 4 2 8 0 A /A L S e rie s 262,144-word x 18-bit Dynamic Random Access Memory HITACHI The Hitachi HM514280A/AL are CMOS dynamic RAM organ ized as 2 6 2 ,1 4 4 -w o r d x 1 8 -b ii. H M 514280A /A L have realized higher density,

Contextual Info: HM51W16160B Series HM51W18160B Series 1048576-word x 16-bit Dynamic Random Access Memory HITACHI ADE-203-538 Z Preliminary Rev. 0.0 Mar. 11, 1996 Description The Hitachi HM51W16160B Series, HM51W18160B Series are CMOS dynamic RAMs organized as 1,048,576-word x 16-bit. They employ the most advanced CMOS technology

zener diode marking 4x

Abstract: 846C NTLTD7900ZR2 NTLTD7900ZR2G
Contextual Info: NTLTD7900ZR2 Power MOSFET 9 A, 20 V, Logic Level, N−Channel Micro8] Leadless EZFETs are an advanced series of Power MOSFETs which contain monolithic back−to−back Zener diodes. These Zener diodes provide protection against ESD and unexpected transients. These

Contextual Info: HM5118160BI Series 1048576-word x 16-bit Dynamic Random Access Memory HITACHI ADE-203-580A Z Rev. 1.0 May. 20, 1996 Description The Hitachi HM5118160BI is a CMOS dynamic RAM organized as 1,048,576-word x 16-bit. It employs the most advanced CMOS technology for high performance and low power. The HM5118160BI offers

Contextual Info: HM514260D Series HM51S4260D Series 4M FP DRAM 256-kword 16-bit 512 refresh HITACHI ADE-203-510C (Z) Rev. 3.0 Nov. 17, 1997 Description The Hitachi HM514260D Series, HM51S4260D Series are CMOS dynamic RAMs organized as 262,144word X 16-bit. HM514260D Series, HM51S4260D Series have realized higher density, higher performance

5118165TT-6

Abstract: M5118165
Contextual Info: HM5118165 Series 1048576-word x 16-bit Dynamic RAM HITACHI ADE-203-636B Z Rev. 2.0 Nov. 26, 1996 Description The Hitachi H M 5118165 is a CMOS dynamic RAM organized as 1,048,576-word x 16-bit. It employs the most advanced 0.5 flm CMOS technology for high performance and low power. The H M 5118165 offers

51w18160

Contextual Info: HM51W16160 Series HM51W18160 Series 1048576-word x 16-bit Dynamic Random Access Memory HITACHI ADE-203-635A Z Rev. 1.0 Sep. 30, 1996 Description The Hitachi HM51W16160 Series, HM51W18160 Series are CMOS dynamic RAMs organized as 1,048,576-word X 16-bit. They employ the most advanced CMOS technology for high performance and

M51W

Contextual Info: HM51W16165 Series HM51W18165 Series 16 M EDO DRAM 1-Mword x 16-bit 4 k Refresh/1 k Refresh HITACHI ADE-203-650D (Z) Rev. 4.0 Nov. 1997 Description The Hitachi HM 51W 16165 Series, HM 51W 18165 Series are CM OS dynam ic RAMs organized as 1,048,576-word X 16-bit. They employ the m ost advanced CMOS technology for high performance and

Nippon capacitors

Contextual Info: HB56RW832DZ J Series 32 MB FP DRAM S.O.DIMM 8-Mword x 32-bit, 2 k Refresh, 2-Bank Module 16 pcs of 4 M x 4 Components HITACHI ADE-203-768B (Z) Rev.2.0 Nov. 1997 Description The HB56RW832DZJ is a 8M x 32 dynamic RAM Small Outline Dual In-line Memory Module

846C

Abstract: NTLTS3107P NTLTS3107PR2G
Contextual Info: NTLTS3107P Power MOSFET −20 V, −8.3 A, Single P−Channel, Micro8 Leadless Package Features • • • • • Low RDS on for Extended Battery Life Surface Mount Micro8 Leadless for Improved Thermal Performance Low Profile (<1.0 mm) Optimal for Portable Designs

TI410

Contextual Info: HM62W16255H Series 4M High Speed SRAM 256-kword x 16-bit HITACHI ADE-203-751A (Z) Preliminary, Rev. 0.1 Nov. 20, 1997 Description The HM 62W 16255H is an asynchronous high speed static RAM organized as 256-kword X 16-bit. It has realized high speed access tim e (10/12/15 ns) with employing 0.35 Jim CMOS process and high speed

THL64V4075ATG

Abstract: THL64V4075ATG-4
Contextual Info: TO SHIBA TH L64V407 5ATG-4,-5,-4S7-5S TENTATIVE TOSHIBA HYBRID DIGITAL INTEGRATED CIRCUIT 4,194,304-WORD BY 64-BIT DYNAMIC RAM MODULE DESCRIPTION The THL64V4075ATG is a 4,194,304-word by 64-bit dynamic RAM module consisting of four TC5165165AFT/AFTS DRAMs on a printed circuit board. This module is optimized for applications

Contextual Info: HM5164160 Series HM5165160 Series 4194304-word x 16bit Dynamic RAM HITACHI ADE-203-810 Z Preliminary, Rev. 0.0 Jul. 23, 1997 Description The Hitachi H M 5164160 Series, HM5165160 Series are 64M-bit dynamic RAMs organized as4,194,304word X 16-bit. They have realized high performance and low power by employing CMOS process