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    MRFG35010AR5 Search Results

    MRFG35010AR5 Datasheets (1)

    Part ECAD Model Manufacturer Description Datasheet Type PDF PDF Size Page count
    MRFG35010AR5
    		Freescale Semiconductor 3.5GHZ 10W GAAS NI360HF Original PDF 425.12KB 18
    SF Impression Pixel

    MRFG35010AR5 Price and Stock

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    Rochester Electronics LLC MRFG35010AR5

    RF MOSFET PHEMT FET 12V NI360
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    DigiKey MRFG35010AR5 Bulk 14 4
    • 1 -
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    NXP Semiconductors MRFG35010AR5

    RF MOSFET PHEMT FET 12V NI360
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    DigiKey MRFG35010AR5 Tape & Reel 50
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    • 100 $48.53
    • 1000 $47.82
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    Freescale Semiconductor MRFG35010AR5

    RF C Band, Gallium Arsenide, N-Channel, High Electron Mobility FET
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    Rochester Electronics MRFG35010AR5 14 1
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    • 100 $52.80
    • 1000 $47.24
    • 10000 $44.46
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    MRFG35010AR5 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    transistor GT 1081

    Abstract: MRFG35010AR5
    Contextual Info: Freescale Semiconductor Technical Data Document Number: MRFG35010A Rev. 0, 5/2006 Gallium Arsenide PHEMT MRFG35010AR1 MRFG35010AR5 RF Power Field Effect Transistor Designed for WiMAX, WLL/MMDS or UMTS driver and final applications. Characterized from 500 to 5000 MHz. Device is unmatched and is suitable for


    Original     		MRFG35010A MRFG35010AR1 MRFG35010AR5 MRFG35010A transistor GT 1081 MRFG35010AR5 PDF