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MRFG35003N6AT1 Datasheets (1)

Part	ECAD Model	Manufacturer	Description	Datasheet Type	PDF	PDF Size	Page count
MRFG35003N6AT1		Freescale Semiconductor	3.5GHZ 3W 6V GAAS PLD1.5	Original	PDF	215.53KB	11

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NXP Semiconductors MRFG35003N6AT1 RF MOSFET PHEMT FET 6V PLD-1.5
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey ()	MRFG35003N6AT1	Cut Tape	448		1	1 $20.66 10 $16.50 100 $14.32 1000 $13.78 10000 $13.78	Buy Now
	MRFG35003N6AT1	Reel				1 - 10 - 100 - 1000 - 10000 -	Buy Now
Verical ()	MRFG35003N6AT1		5,000		25	1 - 10 - 100 $16.94 1000 $15.15 10000 $14.26	Buy Now
	MRFG35003N6AT1		1,000		25	1 - 10 - 100 $16.94 1000 $15.15 10000 $14.26	Buy Now
	MRFG35003N6AT1		700		25	1 - 10 - 100 $16.94 1000 $15.15 10000 $14.26	Buy Now
Newark	MRFG35003N6AT1	Reel			1,000	1 - 10 - 100 - 1000 $12.23 10000 $11.64	Buy Now
Rochester Electronics	MRFG35003N6AT1		6,700		1	1 - 10 - 100 $13.55 1000 $12.12 10000 $11.41	Buy Now
Rochester Electronics LLC MRFG35003N6AT1 RF MOSFET PHEMT FET 6V PLD-1.5
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DigiKey	MRFG35003N6AT1	Bulk			17	1 - 10 - 100 $17.83 1000 $17.83 10000 $17.83	Buy Now

MRFG35003N6AT1 Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
K 1358 fet transistor Abstract: MRFG35003N6AT1 A113 A114 A115 AN1955 C101 JESD22 ASME 16.17 Contextual Info: Freescale Semiconductor Technical Data Document Number: MRFG35003N6A Rev. 2, 6/2009 Gallium Arsenide PHEMT RF Power Field Effect Transistor MRFG35003N6AT1 Designed for WLL/MMDS/BWA or UMTS driver applications with frequencies from 500 to 5000 MHz. Device is unmatched and is suitable for use in Class AB	Original	MRFG35003N6A MRFG35003N6AT1 K 1358 fet transistor MRFG35003N6AT1 A113 A114 A115 AN1955 C101 JESD22 ASME 16.17	PDF
Contextual Info: Freescale Semiconductor Technical Data Document Number: MRFG35003N6 Rev. 6, 1/2008 MRFG35003N6T1 replaced by MRFG35003N6AT1. MRFG35003N6T1 Gallium Arsenide PHEMT RF Power Field Effect Transistor 3.5 GHz, 3 W, 6 V POWER FET GaAs PHEMT • Typical W - CDMA Performance: - 42 dBc ACPR, 3.55 GHz, 6 Volts,	Original	MRFG35003N6 MRFG35003N6T1 MRFG35003N6AT1. MRFG35003N6T1	PDF
MRFG35003N6AT1 Abstract: IrL 1540 N FET 4900 A113 A114 A115 AN1955 C101 JESD22 n channel fet k 1118 Contextual Info: Freescale Semiconductor Technical Data Document Number: MRFG35003N6A Rev. 0, 7/2007 Gallium Arsenide PHEMT RF Power Field Effect Transistor MRFG35003N6AT1 Designed for WLL/MMDS/BWA or UMTS driver applications with frequencies from 500 to 5000 MHz. Device is unmatched and is suitable for use in Class AB	Original	MRFG35003N6A MRFG35003N6AT1 MRFG35003N6AT1 IrL 1540 N FET 4900 A113 A114 A115 AN1955 C101 JESD22 n channel fet k 1118	PDF
Contextual Info: Freescale Semiconductor Technical Data Document Number: MRFG35003N6A Rev. 2, 6/2009 Gallium Arsenide PHEMT RF Power Field Effect Transistor MRFG35003N6AT1 Designed for WLL/MMDS/BWA or UMTS driver applications with frequencies from 500 to 5000 MHz. Device is unmatched and is suitable for use in Class AB	Original	MRFG35003N6A MRFG35003N6AT1	PDF
MRFG35003N6AT1 Abstract: ATC100A101 A113 A114 A115 AN1955 C101 JESD22 0841 K 1358 fet transistor Contextual Info: Freescale Semiconductor Technical Data Document Number: MRFG35003N6A Rev. 1, 11/2008 Gallium Arsenide PHEMT RF Power Field Effect Transistor MRFG35003N6AT1 Designed for WLL/MMDS/BWA or UMTS driver applications with frequencies from 500 to 5000 MHz. Device is unmatched and is suitable for use in Class AB	Original	MRFG35003N6A MRFG35003N6AT1 MRFG35003N6AT1 ATC100A101 A113 A114 A115 AN1955 C101 JESD22 0841 K 1358 fet transistor	PDF
MRFG35003N6AT1 Abstract: A113 MRFG35003N6T1 Contextual Info: Freescale Semiconductor Technical Data Document Number: MRFG35003N6 Rev. 6, 1/2008 MRFG35003N6T1 replaced by MRFG35003N6AT1. MRFG35003N6T1 Gallium Arsenide PHEMT RF Power Field Effect Transistor 3.5 GHz, 3 W, 6 V POWER FET GaAs PHEMT • Typical W - CDMA Performance: - 42 dBc ACPR, 3.55 GHz, 6 Volts,	Original	MRFG35003N6 MRFG35003N6T1 MRFG35003N6AT1. MRFG35003N6T1 MRFG35003N6AT1 A113	PDF
MMZ20363B Abstract: NONLINEAR MODEL LDMOS MMZ25333B MRFE6VP6300 Product Selector Guide Contextual Info: RF Products Selector Guide freescale.com/RF RF Product Selector Guide Freescale is the global leader in RF transistors for power amplifiers, the most trusted source of RF solutions for more than 30 years. Freescale offers RF solutions for most communication and industrial applications serving wireless	Original		PDF
power transistors table Abstract: MW6S010NR1 mrfe6s9060n MHW6342TN Motorola Microwave power Transistor "RF high power Amplifier" MRF6V2300N MRFG35010R1 MRF6P23190HR6 MRF373 PUSH PULL Contextual Info: RF Products Freescale Semiconductor Selector Guide SG46 Rev. 34 6/2008 RF Product Selector Guide Offering a broad portfolio of RF products, Freescale Semiconductor primarily serves the wireless infrastructure, wireless subscriber, general purpose amplifier, broadcast and industrial markets. Freescale pioneered RF technology and continues to be the leader in the field by providing the quality,	Original		PDF
MRF8P9040N Abstract: rf Amplifier mhz Doherty 470-860 MRF1513NT1 s2p MRF8S21100H MRF8S21100HS MRF8S9220HR3 AN1643 MRF6P23190H MRF8S9170NR3 MW6S004NT1 Contextual Info: RF Products Freescale Semiconductor Selector Guide SG46 Rev. 35.1 5/2010 RF Product Selector Guide Freescale Semiconductor offers a comprehensive portfolio of RF products, primarily serving the cellular infrastructure, general purpose amplifier, broadcast, aerospace and industrial	Original		PDF
MRFG35003N6AT1 Abstract: A113 MRFG35003N6T1 motorola marking pld-1.5 package TRANSISTOR J 5803 Contextual Info: Freescale Semiconductor Technical Data Document Number: MRFG35003N6 Rev. 6, 1/2008 MRFG35003N6T1 Gallium Arsenide PHEMT RF Power Field Effect Transistor Designed for 3.5 GHz WLL/MMDS/BWA or UMTS applications. Characterized from 0.5 to 5.0 GHz. Device is unmatched and is characterized for use in	Original	MRFG35003N6 MRFG35003N6T1 MRFG35003N6AT1 A113 MRFG35003N6T1 motorola marking pld-1.5 package TRANSISTOR J 5803	PDF