MP 35A DIODE Search Results

24JUN98

Contextual Info: MP35005/W–MP3510/W Vishay Lite–On Power Semiconductor 35A Bridge Rectifier Features D D D D D D Diffused junction Low reverse leakage current Surge overload rating to 400A peak Low power loss, high efficiency Case to terminal isolation voltage 2500V MP

FDD8780

Abstract: FDD8780 equivalent FDU8780
Contextual Info: LE A REE I DF M ENTATIO LE N MP FDD8780/FDU8780 N-Channel PowerTrench MOSFET 25V, 35A, 8.5mΩ General Description Features This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM

FDD8796

Abstract: FDU8796 247a SWITCHER
Contextual Info: LE A REE I DF M ENTATIO LE N MP FDD8796/FDU8796 N-Channel PowerTrench MOSFET 25V, 35A, 5.7mΩ General Description Features This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM

FDD8770

Abstract: FDD8770 equivalent FDU8770
Contextual Info: LE A REE I DF M ENTATIO LE N MP FDD8770/FDU8770 N-Channel PowerTrench MOSFET 25V, 35A, 4.0mΩ General Description Features This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM

FDD8782

Abstract: FDU8782 TO-251 fairchild FDD8782/FDU8782
Contextual Info: LE A REE I DF M ENTATIO LE N MP FDD8782/FDU8782 N-Channel PowerTrench MOSFET 25V, 35A, 11mΩ General Description Features This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM

FDD5810

Contextual Info: FDD5810 N-Channel PowerTrench MOSFET 60V, 35A, 27mΩ Applications „ RDS ON = 20.5mΩ (Typ.), VGS = 5V, ID = 35A „ Motor / Body Load Control „ Qg(5) = 13nC (Typ.), VGS = 5V „ ABS Systems „ Low Miller Charge „ Powertrain Management „ Low Qrr Body Diode

Contextual Info: AC-DC Converters www.powersolve.co.uk MP Series Modular Configurable Power Supplies 400-1200 Watts Single & Multi Outputs Features MP4 • Current share on all outputs with ratings of 10A or greater • Remote sense on all outputs with ratings greater than 2A

Contextual Info: FDD5810 N-Channel Logic Level Trench MOSFET 60V, 36A, 27mΩ Features Applications ̈ RDS ON = 22mΩ (Typ.), VGS = 5V, ID = 29A ̈ Motor / Body Load Control ̈ Qg(5) = 13nC (Typ.), VGS = 5V ̈ ABS Systems ̈ Low Miller Charge ̈ Powertrain Management ̈ Low Qrr Body Diode

FDB8441

Contextual Info: FDB8441_F085 N-Channel PowerTrench MOSFET 40V, 80A, 2.5mΩ Applications „ Automotive Engine Control „ Typ Qg 10 = 215nC at VGS = 10V „ Powertrain Management „ Low Miller Charge „ Solenoid and Motor Drivers „ Low Qrr Body Diode „ Electronic Steering

MP1-3D-3E-00

Abstract: mp6 astec astec mp8 810E CSA22 MP6-3E-1L-4LE-00 MP6-3E-00 mp series astec 0MXX mp1 astec
Contextual Info: 400 - 1200 Watts MP Series Special Features MP4 MP6 • Current share on all outputs with ratings of 10 A or greater • Remote sense on all outputs with ratings greater than 2 A • Overload protection on all outputs • Voltage adjustment on all outputs

mp6 astec

Abstract: MP6-3E-1L-4LE-00 astec custom power astec MP1 vme chassis 810E CSA22 M4x8 mp8 astec Logic connector astec mp8
Contextual Info: 400 - 1200 Watts MP Series Special Features MP4 MP6 • Current share on all outputs with ratings of 10 A or greater • Remote sense on all outputs with ratings greater than 2 A • Overload protection on all outputs • Voltage adjustment on all outputs

FDD8778

Abstract: FDU8778 diode marking 33a on semiconductor
Contextual Info: FDD8778/FDU8778 N-Channel PowerTrench MOSFET 25V, 35A, 14mΩ Features tm General Description „ Max rDS on = 14.0mΩ at VGS = 10V, ID = 35A This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using

Contextual Info: PD - 96371B IRF6898MPbF IRF6898MTRPbF HEXFET Power MOSFET plus Schottky Diode ‚ Typical values unless otherwise specified RoHs Compliant Containing No Lead and Bromide  VDSS VGS RDS(on) RDS(on) l Integrated Monolithic Schottky Diode 25V max ±16V max 0.8mΩ@ 10V 1.2mΩ@ 4.5V

Contextual Info: IRF6898MPbF IRF6898MTRPbF HEXFET Power MOSFET plus Schottky Diode ‚ Typical values unless otherwise specified l RoHs Compliant Containing No Lead and Bromide ‚ l Integrated Monolithic Schottky Diode l Low Profile (<0.7 mm) lDual Sided Cooling Compatible 

RJK03P7DPA

Abstract: NP109N055PUJ rjh60d7bdpq rjh60t04 rjp65t43 NP75N04YUG NP60N055MUK NP109N04PUK RJU6052SDPD-E0 PS2761B-1
Contextual Info: RENESAS Electronics New Product Highlight Highlight of Discrete Devices Renesas Electronics Corporation Analog & Power Devices Marketing & Production Planning Division July 2013 2012 Renesas Electronics Corporation. All rights reserved. 00000-A RENESAS Discrete Devices Position

alternator diode 35a 12v

Abstract: AN7514 FDP8441
Contextual Info: FDP8441 tm N-Channel PowerTrench MOSFET 40V, 80A, 2.7mΩ Applications „ Typ rDS on = 2.1mΩ at VGS = 10V, ID = 80A „ Automotive Engine Control „ Typ Qg(10) = 215nC at VGS = 10V „ Powertrain Management „ Low Miller Charge „ Solenoid and Motor Drivers

FDB8441

Contextual Info: FDB8441 N-Channel PowerTrench MOSFET 40V, 80A, 2.5mΩ Applications „ Typ rDS on = 1.9mΩ at VGS = 10V, ID = 80A „ Automotive Engine Control „ Typ Qg(10) = 215nC at VGS = 10V „ Powertrain Management „ Low Miller Charge „ Solenoid and Motor Drivers

Contextual Info: FDP8441 tm N-Channel PowerTrench MOSFET 40V, 80A, 2.7mΩ Features Applications ̈ Typ rDS on = 2.1mΩ at VGS = 10V, ID = 80A ̈ Automotive Engine Control ̈ Typ Qg(10) = 215nC at VGS = 10V ̈ Powertrain Management ̈ Low Miller Charge ̈ Solenoid and Motor Drivers

FDD5810-F085

Abstract: FDD5810 FDD5810_F085
Contextual Info: FDD5810_F085 N-Channel Logic Level Trench MOSFET 60V, 36A, 27m: Features Applications „ RDS ON = 22m: Typ.), VGS = 5V, ID = 29A „ Motor / Body Load Control „ Qg(5) = 13nC (Typ.), VGS = 5V „ ABS Systems „ Low Miller Charge „ Powertrain Management

Contextual Info: FDP8441_F085 N-Channel PowerTrench MOSFET 40V, 80A, 2.7mΩ Features Applications ̈ Typ rDS on = 2.1mΩ at VGS = 10V, ID = 80A ̈ Automotive Engine Control ̈ Typ Qg(10) = 215nC at VGS = 10V ̈ Powertrain Management ̈ Low Miller Charge ̈ Solenoid and Motor Drivers

P3510

Contextual Info: MP35005/W-MP3510/W Vishay Lite-On Power Semiconductor ▼ 35A Bridge Rectifier Features • Diffused junction • Low reverse leakage current • Surge overload rating to 4 00A peak • Low pow er loss, high efficiency • C ase to term inal isolation voltage 2500V

adapter 12v,2A 5V,2A

Abstract: lpq253 LPQ252 LPQ152 power supply 2000w 24V 50A HPS3KW LPQ352-C nfs80-7606 ASTEC LPT42 INSTRUCTIONS 24V2A
Contextual Info: Embedded Power For Business-Critical Continuity Astec and Artesyn AC - DC and DC - DC Products During 2006, Artesyn Technologies was acquired by Emerson and now forms part of Emerson Network Power. Emerson Network Power and its divisions – including Liebert, ASCO, Astec,

CV marking code diode transient

Abstract: DS19002 marking code Kk SMB SMBJ11CA lm 35 dz 91 smb marking mp marking code lx diode marking KZ diode CK 66 94V-0 LG marking code diode transient
Contextual Info: SMBJ5.0 C A - SMBJ170(C)A 600W SURFACE MOUNT TRANSIENT VOLTAGE SUPPRESSOR Features • · · · · · · 600W Peak Pulse Power Dissipation 5.0V - 170V Standoff Voltages Glass Passivated Die Construction Uni- and Bi-Directional Versions Available Excellent Clamping Capability

A13F

Abstract: BM marking code marking code KP marking KZ diode SMBJ10 SMBJ11 SMBJ12 SMBJ13 SMBJ170 SMBJ170A
Contextual Info: SMBJ5.0 C A - SMBJ170(C)A 600W SURFACE MOUNT TRANSIENT VOLTAGE SUPPRESSOR Features • · · · · · · 600W Peak Pulse Power Dissipation 5.0V - 170V Standoff Voltages Glass Passivated Die Construction Uni- and Bi-Directional Versions Available B Excellent Clamping Capability