MOTOROLA GATE ARRAY Search Results

AN1553

Abstract: BUF32 BUF6
Contextual Info: MOTOROLA Order this document by AN1553/D SEMICONDUCTOR APPLICATION NOTE AN1553 Minimizing Skew Across Multiple Clock Trees in Gate Arrays Prepared by: Thomas Lüdeke Motorola, Munich CONTENTS 2. Multiplexing Clocks Page

J4-81

Contextual Info: MMCFPGA1200UM/D Rev 1 JANUARY 1999 MMCFPGA1200 FIELD PROGRAMMABLE GATE ARRAY I/O PERIPHERAL BOARD FPGA IPB USER’S MANUAL MOTOROLA Inc., 1998, 1999; All Rights Reserved Motorola reserves the right to make changes without further notice to any products herein to improve reliability, function, or design. Motorola does not

Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MCM56824AZP Product Preview DSPRAM 8K x 24 Bit Fast Static RAM The MCM56824AZP is a 196,608 bit static random access memory organized as 8,192 words of 24 bits, fabricated using Motorola’s high-performance silicon-gate

Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MCM6209C Advance Information 64K x 4 Bit Fast Static RAM With Output Enable The MCM6209C is fabricated using Motorola’s high-performance silicon-gate CMOS technology. Static design eliminates the need for external clocks or timing

mc10100

Abstract: EL89
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA ECLinPS Lite Single Gate ECL Devices Features • • • • 275ps Package Gate Delays 2.0GHZ+ Flip-Flop Toggle Frequencies Space Efficient 8-Lead SOIC Package Choice of ECL Compatibility: MECL 10H™ 10EL ; or ECL

l 7251 3.1

Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MCM67D709 128K x 9 Bit Synchronous Dual I/O Fast Static RAM The MCM67D709 is a 1,179,648 bit synchronous static random access memory organized as 131,072 words of 9 bits, fabricated using Motorola’s highperformance siiicon-gate BiCMOS technology. The device integrates a 128K x

Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MCM67D709 128K x 9 Bit Synchronous Dual I/O Fast Static RAM The MCM67D709 is a 1,179,648 bit synchronous static random access memory organized as 131,072 words of 9 bits, fabricated using Motorola’s high performance siiicon-gate BiCMOS technology. The device integrates a 128K x

64K X 4 SRAM

Abstract: MCM62980J20
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA 64K x 4 Bit Fast Synchronous Static RAM The MCM62980 is a 262,144 bit synchronous static random access memory organized as 65,536 words of 4 bits, fabricated using Motorola’s high-perfor­ mance silicon-gate CMOS technology. The device integrates a 64K x 4 SRAM

he701

Abstract: AN1508 MCA10000ECL MCA2200ECL MCA3200ETL MCA6200ETL MCA750ETL 533AN signal path designer AN-1508
Contextual Info: Order this document by AN1508/D MOTOROLA SEMICONDUCTOR APPLICATION NOTE AN1508 High Frequency Design Techniques and Guidelines for Bipolar Gate Arrays By: Jon Houghten, Jerry Prioste, & Loren Kinsey Application Specific Integrated Circuits Division, Chandler AZ

Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MCM62110 32K x 9 Bit Synchronous Dual I/O or Separate I/O Fast Static RAM with Parity Checker The MCM62110 is a 294,912 bit synchronous static random access memory organized FN PACKAGE as 32,768 words of 9 bits, fabricated using Motorola’s high-performance silicon-gate

74LS86 motorola

Abstract: 74LS86 full adder motorola 74LS86 74HG74 TTL 74ls83 74ls74 ALL 74LS74 motorola 74LS74 TTL 74ls74 MCA1200ECL
Contextual Info: LOGIC PRODUCTS — SEMICUSTOM continued Motorola Macrocell Array Families ft/i/t/t/t/t/t/à i / l / j / i / 1 / f/f /i Technology TTL ECL ECL/TTL 3-Mlcron Sllicon-Gate HCMOS 2-IMicron Sllicon-Gate HCMOS G ate E qu iva le nt 652 1192 2472 533 1280 2720 2958

transistor LT 6225

Abstract: lt 6225 HCA6348
Contextual Info: INTRODUCTION TO MOTOROLA CMOS MACROCELL ARRAYS The M otorola H C A6000 Series Macrocell Arrays MCA consists o f both 2-m icron and 3-m icron gate length devices fabricated using a CMOS silicon-gate 2-layer metal technology. T his technology provides high speed perform ance w hile m aintaining the high

33395T

Abstract: HSE2 mcu32 cp1h cp1l
Contextual Info: MOTOROLA Document order number: MC33395/D Rev 1.0, 11/2003 SEMICONDUCTOR TECHNICAL DATA Advance Information 33395 33395T Three-Phase Gate Driver IC The 33395 simplifies the design of high-power BLDC motor control design by combining the gate drive, charge pump, current sense, and protection circuitry

Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MCM67T316 Product Preview 8K x 16 Bit Synchronous Cache Tag RAM The MCM67T316 is a 131,072 bit synchronous static random access memory organized as 8,192 words of 16 bits, fabricated using Motorola’s high-perfor­ mance silicon-gate BiCMOS technology. Each word contains a 15-bit address

dual 5-Input Majority Logic Gate

Abstract: 5-Input Majority Logic Gate MC14530B MC14XXXBCL MC14XXXBCP MC14XXXBD MAJORITY LOGIC
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MC14530B Dual 5-Input Majority Logic Gate L SUFFIX CERAMIC CASE 620 The MC14530B dual five–input majority logic gate is constructed with P–channel and N–channel enhancement mode devices in a single monolithic structure. Combinational and sequential logic expressions are

33395T

Abstract: cp1l HSE2 Pulse Width Modulation
Contextual Info: MOTOROLA Document order number: MC33395/D Rev 2.0, 01/2004 SEMICONDUCTOR TECHNICAL DATA Advance Information 33395 33395T Three-Phase Gate Driver IC The 33395 simplifies the design of high-power BLDC motor control design by combining the gate drive, charge pump, current sense, and protection circuitry

mcm6288cp25

Abstract: 6288C MCM6288C
Contextual Info: MOTOROLA • SEMICONDUCTOR TECHNICAL DATA MCM6288C 1 6 K x 4 Bit Static RAM The MCM6288C is a 65,536 bit static random access memory organized as 16,384 words of 4 bits, fabricated using Motorola’s high-performance silicon-gate CMOS tech­ nology. Static design eliminates the need for external clocks or timing strobes, while

Contextual Info: MOTOROLA SC {tlEflO RY/ASI LSE D WÊ t . 3 b ? 2 S l MOTOROLA DSPRAM 8K x 24 Bit Fast Static RAM ELECTRICALLY TESTED PER: MPG56824A The 56824A is a 196,608 bit static random access m em ory organized as 8,192 words of 24 bits, fabricated using M otorola’s high perform ance silicon-gate CMOS

J243 motorola

Abstract: RS56 RS58 CMB1200 MMC2001 MARKING CODE l22 KEYPAD verilog KEYPAD 4 X 4 verilog 0x2f000000
Contextual Info: Freescale Semiconductor, Inc. MMCFPGA1200UM/D Rev 1 JANUARY 1999 Freescale Semiconductor, Inc. MMCFPGA1200 FIELD PROGRAMMABLE GATE ARRAY I/O PERIPHERAL BOARD FPGA IPB USER’S MANUAL MOTOROLA Inc., 1998, 1999; All Rights Reserved For More Information On This Product,

62A17

Abstract: HCA62A17 62A50 18PDIP 68-LCC
Contextual Info: í Order this data sheet by HCA62A00/D M MOTOROLA HCA62A00 Series SEM ICO NDUCTO RS P.O B O X 20912 • PHOENIX, A R IZ O N A 85036 HCA62A00 SERIES CMOS MACROCELL ARRAYS The HCA62A00 series m acrocell arrays are im plem ented in sil­ icon gate, 2-m icron draw n gate length, dual-layer metal intercon­

AN1521

Abstract: 10E116 H4Eplus HP54006A
Contextual Info: Order this document by AN1521/D MOTOROLA SEMICONDUCTOR Application Note AN1521 High-Performance CMOS Interfaces for the H4CPlus and H4EPlus Series Gate Arrays Prepared by: Jon Houghten, Loren Kinsey, Jerry Prioste, and Peter Economopoulos Application Specific Integrated Circuits Division, Chandler AZ

AVW smd

Contextual Info: MOTOROLA f f i M SC O T O {NEflORY/ASI R O L A bSE D b 3 t ? a s i ELECTRICALLY TESTED PER: MPG62995A The 62995A is a 262,144 bit latched address static random access memory organized as 16,384 words of 16 bits, fabricated using Motorola’s high-performance silicon-gate CMOS technology. The device integrates a 16K

74ls783

Abstract: mcm6665 mcm-6665 mcm6665 MOTOROLA MC6883 MC6846 MC6847 2716 prom 128x192 MC1372
Contextual Info: MC6847 M MOTOROLA Non-Interlace SEMICONDUCTORS MC6847Y Interlace 3501 ED BLUESTEIN BLVD., AUSTIN. TEXAS 78721 MOS MC6847/ MC6847Y VIDEO DISPLAY GENERATOR (VDG) (N-CHANNEL, SILICON-GATE) The video display generator (VDG) provides a means of interfacing

MCM2814ATR

Abstract: 07816
Contextual Info: MOTOROLA SEMICONDUCTOR -TECHNICAL DATA Preliminary Information MCM2814ATR 256 x 8 Bit Serial EEPROM The MCM2814ATR is a 2048-bit serial electrically erasable PROM fabricated using floating gate HCMOS technology. It is designed for handling data in applications requir­