MOTOROLA DIODE DEVICE DATA Search Results

BC237

Abstract: 2n2222a SOT223 5161 common anode
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MV7005T1 Silicon Tuning Diode Motorola Preferred Device This silicon tuning diode is designed for use in high capacitance, high–tuning ratio applications. The device is housed in the SOT-223 package which is designed for

SOT223 package

Abstract: power diode sot223 sot223 device Marking
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA M V7005T1 S ilicon Tim ing Diode Motorola Preferred Device This silicon tuning diode is designed for use in high capacitance, high-tuning ratio applications. The device is housed in the SOT-223 package which is designed for

motorola diode marking code

Abstract: VA MARKING SC-70 PACKAGE
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Common Anode Silicon Dual Switching Diode M1MA141WAT1 M1MA142WAT1 Motorola Preferred Device# This C ommon Anode Silicon Epitaxial Planar Dual Diode is designed for use in ultra high speed switching applications. This device is housed in the SC-70

sot-223 body marking D K Q F

Abstract: MV7005T1 pd 223 V7005
Contextual Info: MOTOROLA Order this document by MV7005T1/D SEMICONDUCTOR TECHNICAL DATA MV7005T1 Silicon Tuning Diode Motorola Preferred Device This silicon tuning diode is designed for use in high capacitance, high–tuning ratio applications. The device is housed in the SOT-223 package which is designed for

motorola 5118

Abstract: SOT-223 KD
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA M V7005T1 Silicon Epicap Diode Motorola Preferred Device This silicon epicap diode is designed for use in high capacitance, high-tuning ratio applications. The device is housed in the SOT-223 package which is designed for medium power surface mount applications.

Motorola 417

Abstract: BAS116LT1 BAS116LT3 lp "sot23 marking motorola" a01102
Contextual Info: MOTOROLA SC DIODES/OPTO bûE ]> • b3b725S 00073^1 M*îT ■■ M0T7 Order this data sheet by BAS116LT1/D MOTOROLA SEMICONDUCTOR TECHNICAL DATA Advance Information BAS116LT1 Sw itching Diode Motorola Preferred Device This switching diode has the following features:

2n3819 replacement

Abstract: 2n3053 replacement BC109C replacement mps2907 replacement bf245 replacement BC237 BF245 bf258 replacement J112 equivalent 2N4265
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Silicon Tuning Diode MMBV809LT1 This device is designed for 900 MHz frequency control and tuning applications. It provides solid–state reliability in replacement of mechanical tuning methods. Motorola Preferred Device

BAW156LT1

Abstract: BAW156LT3
Contextual Info: MOTOROLA Order this document by BAW156LT1/D SEMICONDUCTOR TECHNICAL DATA Monolithic Dual Switching Diode This switching diode has the following features: BAW156LT1 Motorola Preferred Device • Low Leakage Current Applications • Medium Speed Switching Times

marking JY sot-23

Abstract: BAV199 marking 8b sot-23 RESISTOR footprint dimension JY marking transistor BAV199LT1 BAV199LT3
Contextual Info: MOTOROLA Order this document by BAV199LT1/D SEMICONDUCTOR TECHNICAL DATA BAV199LT1 Dual Series Switching Diode Motorola Preferred Device This switching diode has the following features: • Low Leakage Current Applications • Medium Speed Switching Times

BAV170LT1

Contextual Info: MOTOROLA Order this document by BAV170LT1/D SEMICONDUCTOR TECHNICAL DATA Monolithic Dual Switching Diode BAV170LT1 Motorola Preferred Device This switching diode has the following features: • Low Leakage Current Applications • Medium Speed Switching Times

Contextual Info: Order this data sheet by BAV199LT1/D MOTOROLA SEMICONDUCTOR TECHNICAL DATA Advance Information BAV199LT1 Dual Series Switching Diode Motorola Preferred Device This switching diode has the following features: Low Leakage Current Applications Medium Speed Switching Times

j305 replacement

Abstract: BC237 mps2907 replacement BC109C replacement
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MMBV3102LT1 Silicon Tuning Diode Motorola Preferred Device This device is designed in the Surface Mount package for general frequency control and tuning applications. It provides solid–state reliability in replacement of mechanical

MOC8080

Contextual Info: MOTOROLA Order this document by MOC8080/D SEMICONDUCTOR TECHNICAL DATA MOC8080 GlobalOptoisolator 6-Pin DIP Optoisolator Darlington Output [CTR = 500% Min] Motorola Preferred Device The MOC8080 device consists of a gallium arsenide infrared emitting diode

MGY40N60D

Abstract: motorola 6810
Contextual Info: MOTOROLA Order this document by MGY40N60D/D SEMICONDUCTOR TECHNICAL DATA  Data Sheet Insulated Gate Bipolar Transistor with Anti-Parallel Diode Designer's MGY40N60D Motorola Preferred Device N–Channel Enhancement–Mode Silicon Gate IGBT & DIODE IN TO–264

mgy20n120d

Abstract: IGBT 250 amp
Contextual Info: MOTOROLA Order this document by MGY20N120D/D SEMICONDUCTOR TECHNICAL DATA Designer's Data Sheet Insulated Gate Bipolar Transistor with Anti-Parallel Diode MGY20N120D Motorola Preferred Device N–Channel Enhancement–Mode Silicon Gate IGBT & DIODE IN TO–264

MGW12N120D

Contextual Info: MOTOROLA Order this document by MGW12N120D/D SEMICONDUCTOR TECHNICAL DATA  Data Sheet Insulated Gate Bipolar Transistor with Anti-Parallel Diode Designer's MGW12N120D Motorola Preferred Device N–Channel Enhancement–Mode Silicon Gate IGBT & DIODE IN TO–247

BC237

Abstract: sot23 transistor marking JY
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Dual Series Switching Diode BAV199LT1 This switching diode has the following features: • Low Leakage Current Applications Motorola Preferred Device • Medium Speed Switching Times • Available in 8 mm Tape and Reel

BC237

Abstract: 2N2904 bf245b equivalent SOT23 Marking JX
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Monolithic Dual Switching Diode This switching diode has the following features: BAV170LT1 • Low Leakage Current Applications Motorola Preferred Device • Medium Speed Switching Times • Available in 8 mm Tape and Reel

transistor IC 1557 b

Abstract: MGW20N60D motorola 803 transistor
Contextual Info: MOTOROLA Order this document by MGW20N60D/D SEMICONDUCTOR TECHNICAL DATA  Data Sheet Insulated Gate Bipolar Transistor with Anti-Parallel Diode Designer's MGW20N60D Motorola Preferred Device N–Channel Enhancement–Mode Silicon Gate IGBT & DIODE IN TO–247

mosfet amp ic

Abstract: transistor motorola 236 MGY25N120D
Contextual Info: MOTOROLA Order this document by MGY25N120D/D SEMICONDUCTOR TECHNICAL DATA  Data Sheet Insulated Gate Bipolar Transistor with Anti-Parallel Diode Designer's MGY25N120D Motorola Preferred Device N–Channel Enhancement–Mode Silicon Gate IGBT & DIODE IN TO–264

BC237

Abstract: TRANSISTOR bc177b
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Monolithic Dual Switching Diode This switching diode has the following features: BAW156LT1 • Low Leakage Current Applications Motorola Preferred Device • Medium Speed Switching Times • Available in 8 mm Tape and Reel

BC237

Abstract: Y2 sot 23
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MMBV3401LT1 Silicon Pin Diode Motorola Preferred Device This device is designed primarily for VHF band switching applications but is also suitable for use in general–purpose switching circuits. Supplied in a Surface Mount

transistor MJ 122

Abstract: MGY40N60D
Contextual Info: MOTOROLA Order this document by MGY40N60D/D SEMICONDUCTOR TECHNICAL DATA  Data Sheet Insulated Gate Bipolar Transistor with Anti-Parallel Diode Designer's MGY40N60D Motorola Preferred Device N–Channel Enhancement–Mode Silicon Gate IGBT & DIODE IN TO–264

MGY30N60D

Contextual Info: MOTOROLA Order this document by MGY30N60D/D SEMICONDUCTOR TECHNICAL DATA  Data Sheet Insulated Gate Bipolar Transistor with Anti-Parallel Diode Designer's MGY30N60D Motorola Preferred Device N–Channel Enhancement–Mode Silicon Gate IGBT & DIODE IN TO–264