MOTOROLA DIODE DEVICE DATA Search Results

sot-223 body marking D K Q F

Abstract: MV7005T1 pd 223 V7005
Contextual Info: MOTOROLA Order this document by MV7005T1/D SEMICONDUCTOR TECHNICAL DATA MV7005T1 Silicon Tuning Diode Motorola Preferred Device This silicon tuning diode is designed for use in high capacitance, high–tuning ratio applications. The device is housed in the SOT-223 package which is designed for

BAW156LT1

Abstract: BAW156LT3
Contextual Info: MOTOROLA Order this document by BAW156LT1/D SEMICONDUCTOR TECHNICAL DATA Monolithic Dual Switching Diode This switching diode has the following features: BAW156LT1 Motorola Preferred Device • Low Leakage Current Applications • Medium Speed Switching Times

marking JY sot-23

Abstract: BAV199 marking 8b sot-23 RESISTOR footprint dimension JY marking transistor BAV199LT1 BAV199LT3
Contextual Info: MOTOROLA Order this document by BAV199LT1/D SEMICONDUCTOR TECHNICAL DATA BAV199LT1 Dual Series Switching Diode Motorola Preferred Device This switching diode has the following features: • Low Leakage Current Applications • Medium Speed Switching Times

BAV170LT1

Contextual Info: MOTOROLA Order this document by BAV170LT1/D SEMICONDUCTOR TECHNICAL DATA Monolithic Dual Switching Diode BAV170LT1 Motorola Preferred Device This switching diode has the following features: • Low Leakage Current Applications • Medium Speed Switching Times

Contextual Info: Order this data sheet by BAV199LT1/D MOTOROLA SEMICONDUCTOR TECHNICAL DATA Advance Information BAV199LT1 Dual Series Switching Diode Motorola Preferred Device This switching diode has the following features: Low Leakage Current Applications Medium Speed Switching Times

MGY40N60D

Abstract: motorola 6810
Contextual Info: MOTOROLA Order this document by MGY40N60D/D SEMICONDUCTOR TECHNICAL DATA  Data Sheet Insulated Gate Bipolar Transistor with Anti-Parallel Diode Designer's MGY40N60D Motorola Preferred Device N–Channel Enhancement–Mode Silicon Gate IGBT & DIODE IN TO–264

transistor IC 1557 b

Abstract: MGW20N60D motorola 803 transistor
Contextual Info: MOTOROLA Order this document by MGW20N60D/D SEMICONDUCTOR TECHNICAL DATA  Data Sheet Insulated Gate Bipolar Transistor with Anti-Parallel Diode Designer's MGW20N60D Motorola Preferred Device N–Channel Enhancement–Mode Silicon Gate IGBT & DIODE IN TO–247

mosfet amp ic

Abstract: transistor motorola 236 MGY25N120D
Contextual Info: MOTOROLA Order this document by MGY25N120D/D SEMICONDUCTOR TECHNICAL DATA  Data Sheet Insulated Gate Bipolar Transistor with Anti-Parallel Diode Designer's MGY25N120D Motorola Preferred Device N–Channel Enhancement–Mode Silicon Gate IGBT & DIODE IN TO–264

transistor MJ 122

Abstract: MGY40N60D
Contextual Info: MOTOROLA Order this document by MGY40N60D/D SEMICONDUCTOR TECHNICAL DATA  Data Sheet Insulated Gate Bipolar Transistor with Anti-Parallel Diode Designer's MGY40N60D Motorola Preferred Device N–Channel Enhancement–Mode Silicon Gate IGBT & DIODE IN TO–264

MGY30N60D

Contextual Info: MOTOROLA Order this document by MGY30N60D/D SEMICONDUCTOR TECHNICAL DATA  Data Sheet Insulated Gate Bipolar Transistor with Anti-Parallel Diode Designer's MGY30N60D Motorola Preferred Device N–Channel Enhancement–Mode Silicon Gate IGBT & DIODE IN TO–264

NT 407 F MOSFET TRANSISTOR

Abstract: transistor motorola 359 Motorola 720 transistor 740 MOSFET TRANSISTOR MGY20N120D 720 transistor transistor motorola 236
Contextual Info: MOTOROLA Order this document by MGY20N120D/D SEMICONDUCTOR TECHNICAL DATA  Data Sheet Insulated Gate Bipolar Transistor with Anti-Parallel Diode Designer's MGY20N120D Motorola Preferred Device N–Channel Enhancement–Mode Silicon Gate IGBT & DIODE IN TO–264

motorola 820

Contextual Info: MOTOROLA Order this document by MMSD914T1/D SEMICONDUCTOR TECHNICAL DATA MMSD914T1 Motorola Preferred Device Switching Diode This switching diode has the following features: • SOD-123 Surface Mount Package • High Breakdown Voltage • Fast Speed Switching Time

Contextual Info: MOTOROLA Order this document by MMSD914T1/D SEMICONDUCTOR TECHNICAL DATA Sw itching Diode MMSD914T1 The switching diode has the following features: • SOD-123 Surface Mount Package • High Breakdown Voltage • Fast Speed Switching Time Motorola Preferred Device

Contextual Info: MOTOROLA Order this document by BAW56LT1/D SEMICONDUCTOR TECHNICAL DATA M onolithic Dual Switching Diode Common Anode BAW56LT1 Motorola Preferred Device CATHODE ►I ANODE 3 O1 — O2 CATHODE MAXIMUM RATINGS EACH DIODE Rating Symbol Value Unit Reverse Voltage

Contextual Info: Order this data sheet by BAW156LT1/D MOTOROLA SEMICONDUCTOR TECHNICAL DATA Advance Information BAW156LT1 M onolithic Dual Sw itching Diode Motorola Preferred Device This switching diode has the following features: • Low Leakage Current Applications • Medium Speed Switching Times

Contextual Info: MOTOROLA Order this document by MMBD7000LT1/D SEMICONDUCTOR TECHNICAL DATA Dual Switching Diode M M BD7000LT1 Motorola Preferred Device 1 ° ANODE N ? i N ° 2 CATHODE CATHODE/ANODE MAXIMUM RATINGS EACH DIODE Symbol Bating Reverse Voltage CASE 318-08, STYLE 11

Contextual Info: MOTOROLA Order this document by MMBV3401LT1/D SEMICONDUCTOR TECHNICAL DATA MMBV3401LT1 Silicon Pin Diode Motorola Preferred Device This device is designed primarily for VHF band switching applications but is also suitable for use in general-purpose switching circuits. Supplied in a Surface Mount

MMBV3401LT1

Contextual Info: MOTOROLA Order this document by MMBV3401LT1/D SEMICONDUCTOR TECHNICAL DATA MMBV3401LT1 Silicon Pin Diode Motorola Preferred Device This device is designed primarily for VHF band switching applications but is also suitable for use in general–purpose switching circuits. Supplied in a Surface Mount

Contextual Info: MOTOROLA Order this document by MMBV3102LT1/D SEMICONDUCTOR TECHNICAL DATA MMBV3102LT1 Silicon Tuning Diode Motorola Preferred Device This device is designed in the Surface Mount package for general frequency control and tuning applications. It provides solid–state reliability in replacement of mechanical

MOC2A60-5

Abstract: 417B-01 MOC2A60-10F
Contextual Info: MOTOROLA Order this document by MOC2A60-10/D SEMICONDUCTOR TECHNICAL DATA MOC2A60-10 M O C2A60-5* POWER OPTO Isolator 2 Amp Zero-Cross Triac Output ‘ Motorola Preferred Device This device consists of a gallium arsenide infrared emitting diode optically coupled to

SOD-123 MARKING 4D

Abstract: MMSV3401T1 SMD310
Contextual Info: MOTOROLA Order this document by MMSV3401T1/D SEMICONDUCTOR TECHNICAL DATA MMSV3401T1 Silicon Pin Switching Diode Motorola Preferred Device This switching diode is designed primarily for VHF band switching applications but is also suitable for use in general–purpose switching circuits. It is supplied in a

Contextual Info: MOTOROLA Order this document by MGW12N120D/D SEMICONDUCTOR TECHNICAL DATA D esigner’s Data Sheet M G W 12N 120D Insulated Gate Bipolar Transistor with Anti-Parallel Diode Motorola Preferred Device N-Channel Enhancement-Mode Silicon Gate IGBT & DIODE IN T O -2 4 7

MOC263

Abstract: RS481A
Contextual Info: MOTOROLA Order this document by MOC263/D SEMICONDUCTOR TECHNICAL DATA MOC263 Small Outline Optoisolators [CTR = 500% Min] Darlington Output No Base Connection Motorola Preferred Device These devices consist of a gallium arsenide infrared emitting diode optically

sod123 diode marking e.1

Contextual Info: MOTOROLA Order this document by MMSV3401T1/D SEMICONDUCTOR TECHNICAL DATA M MSV3401T1 S ilico n Pin Sw itching Diode Motorola Preferred Device This switching diode is designed primarily for VHF band switching applications but is also suitable for use in general-purpose switching circuits. It is supplied in a