MOTOROLA DIODE 250 Search Results
MOTOROLA DIODE 250 Result Highlights (5)
| Part | ECAD Model | Manufacturer | Description | Download | Buy |
|---|---|---|---|---|---|
| CEZ6V2 |
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Zener Diode, 6.2 V, ESC | Datasheet | ||
| CUZ6V8 |
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Zener Diode, 6.8 V, USC | Datasheet | ||
| CUZ12V |
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Zener Diode, 12 V, USC | Datasheet | ||
| MUZ5V6 |
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Zener Diode, 5.6 V, USM | Datasheet | ||
| CEZ6V8 |
|
Zener Diode, 6.8 V, ESC | Datasheet |
MOTOROLA DIODE 250 Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
|---|---|---|---|
Motorola 417
Abstract: BAS116LT1 BAS116LT3 lp "sot23 marking motorola" a01102
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OCR Scan |
b3b725S BAS116LT1 BAS116LT3 inch/10 BAS116LT1/D BAS116LT1 OT-23 O-236AB) Motorola 417 lp "sot23 marking motorola" a01102 | |
bc352
Abstract: KM90 BC370 K9015 2N3341 2N5242 OC201 2u 64 diode
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MPS5142 MPS5143 2N998 2N3677 2N2411 2N1991 PN5143 2N5143 2N2802 2N2803 bc352 KM90 BC370 K9015 2N3341 2N5242 OC201 2u 64 diode | |
BC352* CSR
Abstract: csr BC352 2N936 Emihus 2N828 MPS5143 Bc352 LOW-POWER SILICON PNP 2N850 transitron
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Original |
MPS5142 MPS5143 2N998 2N3677 2N2411 2N1991 PN5143 2N5143 2N2802 2N2803 BC352* CSR csr BC352 2N936 Emihus 2N828 Bc352 LOW-POWER SILICON PNP 2N850 transitron | |
MGY40N60D
Abstract: motorola 6810
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Original |
MGY40N60D/D MGY40N60D IGBTMGY40N60D/D MGY40N60D motorola 6810 | |
Transistor motorola 418
Abstract: mosfet amp ic MGW12N120D 305 Power Mosfet MOTOROLA 305 Mosfet MOTOROLA Motorola 720 transistor
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Original |
MGW12N120D/D MGW12N120D MGW12N120D/D* Transistor motorola 418 mosfet amp ic MGW12N120D 305 Power Mosfet MOTOROLA 305 Mosfet MOTOROLA Motorola 720 transistor | |
mgy20n120d
Abstract: IGBT 250 amp
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Original |
MGY20N120D/D MGY20N120D mgy20n120d IGBT 250 amp | |
MGW12N120DContextual Info: MOTOROLA Order this document by MGW12N120D/D SEMICONDUCTOR TECHNICAL DATA Data Sheet Insulated Gate Bipolar Transistor with Anti-Parallel Diode Designer's MGW12N120D Motorola Preferred Device N–Channel Enhancement–Mode Silicon Gate IGBT & DIODE IN TO–247 |
Original |
MGW12N120D/D MGW12N120D MGW12N120D | |
BC237
Abstract: sot23 transistor marking JY
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Original |
BAV199LT1 BAV199LT3 inch/10 BAV199LT1 236AB) S218A MSC1621T1 MSC2404 MSD1819A MV1620 BC237 sot23 transistor marking JY | |
BC237
Abstract: 2N2904 bf245b equivalent SOT23 Marking JX
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BAV170LT1 BAV170LT3 inch/10 BAV170LT1 236AB) t218A MSC1621T1 MSC2404 MSD1819A MV1620 BC237 2N2904 bf245b equivalent SOT23 Marking JX | |
transistor IC 1557 b
Abstract: MGW20N60D motorola 803 transistor
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Original |
MGW20N60D/D MGW20N60D MGW20N60D/D* transistor IC 1557 b MGW20N60D motorola 803 transistor | |
mosfet amp ic
Abstract: transistor motorola 236 MGY25N120D
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Original |
MGY25N120D/D MGY25N120D MGY25N120D/D* mosfet amp ic transistor motorola 236 MGY25N120D | |
BC237
Abstract: TRANSISTOR bc177b
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Original |
BAW156LT1 BAW156LT3 inch/10 BAW156LT1 236AB) Junc218A MSC1621T1 MSC2404 MSD1819A MV1620 BC237 TRANSISTOR bc177b | |
transistor MJ 122
Abstract: MGY40N60D
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MGY40N60D/D MGY40N60D MGY40N60D/D* TransistorMGY40N60D/D transistor MJ 122 MGY40N60D | |
MGY30N60DContextual Info: MOTOROLA Order this document by MGY30N60D/D SEMICONDUCTOR TECHNICAL DATA Data Sheet Insulated Gate Bipolar Transistor with Anti-Parallel Diode Designer's MGY30N60D Motorola Preferred Device N–Channel Enhancement–Mode Silicon Gate IGBT & DIODE IN TO–264 |
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MGY30N60D/D MGY30N60D MGY30N60D/D* TransistorMGY30N60D/D MGY30N60D | |
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MGY25N120DContextual Info: MOTOROLA Order this document by MGY25N120D/D SEMICONDUCTOR TECHNICAL DATA Designer's Data Sheet Insulated Gate Bipolar Transistor with Anti-Parallel Diode MGY25N120D Motorola Preferred Device N–Channel Enhancement–Mode Silicon Gate IGBT & DIODE IN TO–264 |
Original |
MGY25N120D/D MGY25N120D MGY25N120D | |
MGY30N60DContextual Info: MOTOROLA Order this document by MGY30N60D/D SEMICONDUCTOR TECHNICAL DATA Data Sheet Insulated Gate Bipolar Transistor with Anti-Parallel Diode Designer's MGY30N60D Motorola Preferred Device N–Channel Enhancement–Mode Silicon Gate IGBT & DIODE IN TO–264 |
Original |
MGY30N60D/D MGY30N60D MGY30N60D/D* TransistorMGY30N60D/D MGY30N60D | |
transistor IC 1557 b
Abstract: MGW20N60D 1557 b transistor 305 Power Mosfet MOTOROLA
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Original |
MGW20N60D/D MGW20N60D MGW20N60D/D* transistor IC 1557 b MGW20N60D 1557 b transistor 305 Power Mosfet MOTOROLA | |
340G-02
Abstract: MGY20N120D
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Original |
MGY20N120D/D MGY20N120D 340G-02 MGY20N120D | |
MGY25N120D
Abstract: 340G-02
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Original |
MGY25N120D/D MGY25N120D MGY25N120D 340G-02 | |
MGW12N120DContextual Info: MOTOROLA Order this document by MGW12N120D/D SEMICONDUCTOR TECHNICAL DATA Designer's Data Sheet Insulated Gate Bipolar Transistor with Anti-Parallel Diode MGW12N120D Motorola Preferred Device N–Channel Enhancement–Mode Silicon Gate IGBT & DIODE IN TO–247 |
Original |
MGW12N120D/D MGW12N120D MGW12N120D | |
BC237
Abstract: 2n2222a SOT223 5161 common anode
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Original |
OT-223 MV7005T1 MSC1621T1 MSC2404 MSD1819A MV1620 MV1624 MV1636 MV1640 BC237 2n2222a SOT223 5161 common anode | |
BC237
Abstract: application notes BF245A
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Original |
BAW56LT1 236AB) Un218A MSC1621T1 MSC2404 MSD1819A MV1620 MV1624 MV1636 MV1640 BC237 application notes BF245A | |
BC237Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Monolithic Dual Switching Diode Common Cathode BAV70LT1 Motorola Preferred Device ANODE 1 3 CATHODE 2 ANODE 3 1 MAXIMUM RATINGS EACH DIODE Symbol Value Unit Reverse Voltage VR 70 Vdc Forward Current IF 200 mAdc IFM(surge) |
Original |
BAV70LT1 236AB) Uni218A MSC1621T1 MSC2404 MSD1819A MV1620 MV1624 MV1636 MV1640 BC237 | |
BC237
Abstract: bc547 equivalent
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Original |
MMBD7000LT1 236AB) MSC1621T1 MSC2404 MSD1819A MV1620 MV1624 MV1636 MV1640 MV1642 BC237 bc547 equivalent | |