MOTOR IG 2200 19 X 00 15 R Search Results

IRG4BC10KD

Contextual Info: PD -91734B IRG4BC10KD INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Short Circuit Rated UltraFast IGBT C Features • High short circuit rating optimized for motor control, tsc =10µs, @360V VCE start , TJ = 125°C, VGE = 15V • Combines low conduction losses with high

IRG4BC10KD

Contextual Info: PD -91734B IRG4BC10KD INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Short Circuit Rated UltraFast IGBT C Features • High short circuit rating optimized for motor control, tsc =10µs, @360V VCE start , TJ = 125°C, VGE = 15V • Combines low conduction losses with high

Contextual Info: Motor driver ICs Reversible motor driver BA6209/BA6209N T he BA6209 and BA6209N are reversible-m otor drivers suitable for brush motors. Two logic inputs allow four output m o d es : forw ard, reverse, idling, and braking. T h e m otor revolving speed can be set arbitrarily by controlling the

Contextual Info: 7^2^537 Q045752 4^0 • S C T H SGS-THOMSON m IRFZ40 IRFZ40FI N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS TYPE IRFZ40 IRFZ40FI V dss R d S o ii Id 50 V 50 V < 0.028 n < 0.028 £i 50 A 27 A TYPICAL R DS(on) = 0.022 Q AVALAN C H E RUGGED TECHNOLO GY

IRG4PH50KD

Abstract: IR 1838 T IRGPH50KD2 IRGPH50MD2 IR 1838 motor IG 2200 19 00001
Contextual Info: PD- 91575B IRG4PH50KD Short Circuit Rated UltraFast IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C Features • High short circuit rating optimized for motor control, tsc =10µs, VCC = 720V , TJ = 125°C, VGE = 15V • Combines low conduction losses with high

IRG4PH50KD

Abstract: IRGPH50KD2 IRGPH50MD2
Contextual Info: PD- 91575B IRG4PH50KD Short Circuit Rated UltraFast IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C Features • High short circuit rating optimized for motor control, tsc =10µs, VCC = 720V , TJ = 125°C, VGE = 15V • Combines low conduction losses with high

IRG4PH30KD

Abstract: IRGPH30MD2
Contextual Info: PD- 91579A IRG4PH30KD Short Circuit Rated UltraFast IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C Features • High short circuit rating optimized for motor control, tsc =10µs, VCC = 720V , TJ = 125°C, VGE = 15V • Combines low conduction losses with high

igbt 400V 20A

Abstract: IRG4PH30KD IRGPH30MD2
Contextual Info: PD- 91579A IRG4PH30KD Short Circuit Rated UltraFast IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C Features • High short circuit rating optimized for motor control, tsc =10µs, VCC = 720V , TJ = 125°C, VGE = 15V • Combines low conduction losses with high

Contextual Info: INTERNATIONAL R E C T IF IE R 73C D M65SM5S QQOinSöl □ • IN R T r 3 -5 .7 :/? Data Sheet No. PD-3.179 INTERNATIONAL RECTIFIER 38 OPJT ^ 3SOP9JTT-ASERIES 1EOO and 1 4 0 0 Amp Major Ratings and Characteristics 320PJT200 32 0 P J T 2 5 0 •t R M S 'T ( A V )

Contextual Info: COM P L E T E RA N GE 1 4 RIEDEL – Energy for a better solution! 4 l General information 12 l Single-phase transformers 24 l Three-phase transformers 32 l DC supplies / battery chargers 46 l Uninterruptible power supplies 52 l Variable ratio ring transformers

motor IG 2200 19 X 000 15 R

Abstract: AN-994 IRG4BC30KD-S IRGBC30KD2-S IRGBC30MD2-S
Contextual Info: PD -91594C IRG4BC30KD-S Short Circuit Rated UltraFast IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C Features • High short circuit rating optimized for motor control, tsc =10µs, @360V VCE start , TJ = 125°C, VGE = 15V • Combines low conduction losses with high

motor IG 2200 19 x 000 15 r

Abstract: AN-994 IRG4BC30KD-S IRGBC30KD2-S IRGBC30MD2-S
Contextual Info: PD -91594C IRG4BC30KD-S Short Circuit Rated UltraFast IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C Features • High short circuit rating optimized for motor control, tsc =10µs, @360V VCE start , TJ = 125°C, VGE = 15V • Combines low conduction losses with high

IRF5Y9540CM

Abstract: 4.5v to 100v input regulator
Contextual Info: PD - 94027A HEXFET POWER MOSFET THRU-HOLE TO-257AA IRF5Y9540CM 100V, P-CHANNEL Product Summary Part Number BVDSS IRF5Y9540CM -100V RDS(on) 0.117Ω ID -18A Fifth Generation HEXFET® power MOSFETs from International Rectifier utilize advanced processing

IRF (10A) 55V

Abstract: IRF5NJZ48
Contextual Info: PD - 94034 IRF5NJZ48 55V, N-CHANNEL HEXFET POWER MOSFET SURFACE MOUNT SMD-0.5 Product Summary Part Number IRF5NJZ48 RDS(on) 0.016Ω BVDSS 55V ID 22A* Fifth Generation HEXFET® power MOSFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance

AN-994

Abstract: IRG4BH20K-S
Contextual Info: PD -93960 IRG4BH20K-S Short Circuit Rated UltraFast IGBT INSULATED GATE BIPOLAR TRANSISTOR Features C • High short circuit rating optimized for motor control, tsc =10µs @ VCC = 720V , TJ = 125°C, VGE = 15V • Combines low conduction losses with high switching speed

cpv364m4f

Contextual Info: PD -5040 CPV364M4F PRELIMINARY IGBT SIP MODULE Fast IGBT 1 Features • Fully isolated printed circuit board mount package • Switching-loss rating includes all "tail" losses TM • HEXFRED soft ultrafast diodes • Optimized for medium operating 1 to 10 kHz

CPV364M4F

Contextual Info: Previous Datasheet Index Next Data Sheet PD -5040 CPV364M4F PRELIMINARY IGBT SIP MODULE Fast IGBT 1 Features • Fully isolated printed circuit board mount package • Switching-loss rating includes all "tail" losses TM • HEXFRED soft ultrafast diodes • Optimized for medium operating 1 to 10 kHz

IRG4BC30KD

Abstract: IRGBC30KD2 IRGBC30MD2
Contextual Info: PD -91595A IRG4BC30KD Short Circuit Rated UltraFast IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C Features • High short circuit rating optimized for motor control, tsc =10µs, @360V VCE start , TJ = 125°C, VGE = 15V • Combines low conduction losses with high

IRG4BC30KD

Abstract: IRGBC30KD2 IRGBC30MD2
Contextual Info: PD -91595A IRG4BC30KD Short Circuit Rated UltraFast IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C Features • High short circuit rating optimized for motor control, tsc =10µs, @360V VCE start , TJ = 125°C, VGE = 15V • Combines low conduction losses with high

ic c 838

Abstract: IRG4PC30KD IRGBC30KD2 IRGBC30MD2
Contextual Info: PD -91587A IRG4PC30KD Short Circuit Rated UltraFast IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C Features • High short circuit rating optimized for motor control, tsc =10µs, @360V VCE start , TJ = 125°C, VGE = 15V • Combines low conduction losses with high

IRG4PC30KD

Abstract: IRGBC30KD2 IRGBC30MD2
Contextual Info: PD -91587A IRG4PC30KD Short Circuit Rated UltraFast IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C Features • High short circuit rating optimized for motor control, tsc =10µs, @360V VCE start , TJ = 125°C, VGE = 15V • Combines low conduction losses with high

irgph40md-2

Abstract: IRG4PH40KD IRGPH40KD2 IRGPH40MD2 MJ 14 x 1,5 - 4
Contextual Info: PD- 91577B IRG4PH40KD Short Circuit Rated UltraFast IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C Features • High short circuit rating optimized for motor control, tsc =10µs, VCC = 720V , TJ = 125°C, VGE = 15V • Combines low conduction losses with high

IRG4PH40KD

Abstract: IRGPH40KD2 IRGPH40MD2 9936 n-ch
Contextual Info: PD- 91577B IRG4PH40KD Short Circuit Rated UltraFast IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C Features • High short circuit rating optimized for motor control, tsc =10µs, VCC = 720V , TJ = 125°C, VGE = 15V • Combines low conduction losses with high

IRHG9110

Abstract: IRHG93110 MO-036AB 12v dc motor IG 2200 19
Contextual Info: PD - 93819 IRHG9110 100V, 4P-CHANNEL RADIATION HARDENED POWER MOSFET THRU-HOLE MO-036AB RAD-Hard HEXFET MOSFET TECHNOLOGY Product Summary Part Number Radiation Level RDS(on) IRHG9110 100K Rads (Si) 1.1Ω IRHG93110 300K Rads (Si) 1.1Ω ID -0.75A