MOSFET XB Search Results

CP Clare RELAY

Abstract: vw polo
Contextual Info: PRODUCT INFORMATION 170 Series XCA170 / XCB170 / XS170 / XAA170 / XBB170 / XBA170 / IAA170P / IBB170 / IAB170 / IAD170P Innovative Process Technology Equivalent Specifications Lower cost The 170 Series of MOSFET-based Integrated Products CPClare CORPORATION

TL494 car charger schematic diagram

Abstract: samsung galaxy s2 controller for PWM fan tl494 1A current to 0-5v voltage converter using LM317 SMD LD33 capacitor huang 2200uF 35V uc3843 flyback supply opto-coupler SMD MOSFET DRIVE 4606 schematic lcd inverter samsung sine wave inverter tl494 circuit diagram
Contextual Info: Micrel Semiconductor 1997 Databook 1 _ General Information 2 _ Computer Peripherals 3 _ Low-Dropout Linear Voltage Regulators 4 _ Switch-Mode Voltage Regulators 5 _ MOSFET Drivers 6 _

marking code r4c

Abstract: marking code R96 mosfet marking c8 ST Microelectronics marking R4d SMM665 SMT4504 marking R99 R9C marking marking RAE
Contextual Info: SMT4504 Preliminary Information1 See Last Page Four-Channel Loss-Less TrakkerTM Power Supply Manager FEATURES & APPLICATIONS INTRODUCTION • Loss-Less Tracking function - No power MOSFET switches • Programmable Slew-Rate, Tracking and Voltage Monitoring Functions

Ta2040

Contextual Info: 5LP01M Ordering number : EN6135A 5LP01M P-Channel Silicon MOSFET General-Purpose Switching Device Applications Features • • • Low ON-resistance. Ultrahigh-speed switching. 2.5V drive. Specifications Absolute Maximum Ratings at Ta=25°C Parameter Symbol

mosfet xb

Contextual Info: MCH6650 Ordering number : ENA1195 SANYO Semiconductors DATA SHEET N-Channel Silicon MOSFET MCH6650 General-Purpose Switching Device Applications Features • • 1.5V drive. Composite type with 2 MOSFETs contained in a single package, facilitating high-density mounting.

TA2040

Abstract: TA-2040 ta 2040
Contextual Info: 5LP01M Ordering number : EN6135A SANYO Semiconductors DATA SHEET 5LP01M P-Channel Silicon MOSFET General-Purpose Switching Device Applications Features • • • Low ON-resistance. Ultrahigh-speed switching. 2.5V drive. Specifications Absolute Maximum Ratings at Ta=25°C

Contextual Info: Ordering number : ENN6621 5LP01SP P-Channel Silicon MOSFET 5LP01SP Ultrahigh-Speed Switching Applications Features • • • Package Dimensions Low ON-resistance. Ultrahigh-speed switching. 2.5V drive. unit : mm 2180 [5LP01SP] 2.2 3.0 4.0 15.0 0.6 1.8 0.4

TA2040

Abstract: TA-2040
Contextual Info: Ordering number:ENN6135 P-Channel Silicon MOSFET 5LP01M Ultrahigh-Speed Switching Applications Features Package Dimensions • Low ON resistance. · Ultrahigh-speed switching. · 2.5V drive. unit:mm 2158 0.3 0.2 0.425 [5LP01M] 0.15 3 0.425 2.1 1.250 0 to 0.1

Contextual Info: Ordering number : ENN6620 5LP01N P-Channel Silicon MOSFET 5LP01N Ultrahigh-Speed Switching Applications Features • • • Package Dimensions Low ON-resistance. Ultrahigh-speed switching. 2.5V drive. unit : mm 2178 [5LP01N] 5.0 4.0 5.0 4.0 0.6 2.0 0.45 0.5

TA2042

Contextual Info: Ordering number : ENN6622 5LP01SS P-Channel Silicon MOSFET 5LP01SS Ultrahigh-Speed Switching Applications Features • • • Package Dimensions Low ON-resistance. Ultrahigh-speed switching. 2.5V drive. unit : mm 2179 [5LP01SS] 0.3 1.4 0.25 0.1 2 0.3 1 0.45

TA-2036

Abstract: ta2036 5LP01C
Contextual Info: Ordering number : ENN6619 5LP01C P-Channel Silicon MOSFET 5LP01C Ultrahigh-Speed Switching Applications Features • • Package Dimensions Low ON-resistance. Ultrahigh-Speed Switching. 2.5V drive. unit : mm 2091A [5LP01C] 0.4 0.16 0 to 0.1 1 : Gate 2 : Source

Contextual Info: Ordering number : EN6621A 5LP01SP P-Channel Small Signal MOSFET http://onsemi.com –50V, –0.07A, 23Ω, Single SPA Features Low ON-resistance Ultrahigh-speed switching 2.5V drive Protection diode in • • • • Specifications Absolute Maximum Ratings at Ta=25°C

Contextual Info: Ordering number : ENN6666 5LP01S P-Channel Silicon MOSFET 5LP01S Ultrahigh-Speed Switching Applications Features • • Package Dimensions Low ON-resistance. Ultrahigh-Speed Switching. 2.5V drive. unit : mm 2124 [5LP01S] 0.4 • 0.3 0.75 0.6 3 0.8 1.6 0 to 0.1

Contextual Info: O rdering n u m b e r : ENN6621 P-Channel Silicon MOSFET 5LP01SP Ultrahigh-Speed Switching Applications Features Package Dimensions • Low ON-resistance. u n it: mm • Ultrahigh-speed switching. 2180 • 2.5V drive. [5LP01SP] 2.2 4.0 M 0.4 1.3 1 : Source

mosfet xb

Abstract: 2SK1686 AC240V FP10W90 KIF T6
Contextual Info: HVXv U —X / \ °7 - M 0 S F E T HVX S e r ie s Pow er MOSFET 2SK1686 OUTLINE DIMENSIONS F P 10W 9 0 9 0 0 V 10 A • A * S * (Ciss) ?t!C -t?□ i U 7 XB ^ IA •x-r " j j - y W ' i Atomic, •AC24ov?SA*©X'f' "jj-y-ynm y ? v ^ a ;© S Œ « i • - ÎV A - 5

CK408

Abstract: CK-408
Contextual Info: SÌ6967DQ VISHAY Vishay Siliconix ▼ Dual P-Channel 1.8-V G-S MOSFET New Product PRODUCT SUM M ARY Vos (VI -8 Boston) Id (A ) (&) 0.030 @ V GS = -4 .5 V ± 5.0 0.045 @ V q S = -2 .5 V ± 4.0 0.070 @ V o s = -1 .8 V ± 3.0 A \* Si S2 Q o TSSOP-B O if It

k408

Contextual Info: _ SÌ6562DQ Vishay Siliconix N- and P-Channel 2.5-V G-S MOSFET lü U U im M y K V o s *vj N -Ch an n el R D8(ON> P I Id (A) 0.030 @ V GS = 4.5 V ± 4.5 0.040 V GS = 2.5 V ± 3.9 20 P-C ha n ne i 0.050 @ V Gs = -4 .5 V ± 3.5

CK408

Abstract: CK-408
Contextual Info: SÌ4480DY Vishay Siliconix N-Channel 80-V D-S MOSFET V d s (V) R DS(ON) (& ) Id M 0.035 @ V GS = 10 V ± 6.0 0.040 @ V QS = 6.0 V ± 5.5 D Q SO-8 <j s Ô s N-Ch an n el M O S F E T liliia y a im fiiiiiiiiH fiá fl PA RA M ETER SYM BOL LIMIT D rain-Source Voltage

CK408

Abstract: CK-408
Contextual Info: _ SÌ4466DY Vishay Siliconix N-Channel 2.5-V D-S MOSFET V d*{ V ) h» (A) 0.009 @ V g s = 4 .5 V ± 13.2 0.013 @ V G S r 2 . 5 V ±11 A 20 SO S i o — it *t N -C h an n e l M O S F E T A BSO LU TF M A X IM U M R A T I N G S ¡T a

CK408

Abstract: CK-408
Contextual Info: _SÌ4963DY Vishay Siliconix Dual P-Channel 2.5-V G-S MOSFET l D (A ) R DS(ON) (Q ) A 0.033 @ V q S = -4 .5 V 0.050 @ V GS « -2 .5 V s2 Si o o SO-8 G2 n i h-*» n Top V iew Ü, n Di D2 P -C h a n n e l M O S F E T A BSO LU TE M A X IM U M

CK408

Abstract: CK-408
Contextual Info: SÌ4425DY Vishay Siticonix P-Channel 30-V D-S MOSFET Vo»|Vi nDS(ON) (Q) iD (A) 0.014 @ V G S = - 1 0 V ±11 0.023 @ V Gg = - 4 .5 V ± 8.5 -3 0 S S S W $0-8 H! rm Top V iew D O D D P -C h a n n e i M O S F E T ABSO LU TE M A X IM U M R A T I N G S I T fi

diode sy 104

Contextual Info: SÌ3457DV Vishay Siliconix P-Channel 30-V D-S MOSFET R d s <o n ) (^ ) 0.065 @ V GS = - 1 0 V 0 .1 0 0 V q s « - 4 5 V 9 ° (4) S Q TSOP-6 Top View H cr 1 Œ 2 5 n cr 3 4 n 6 (3) G °~ t O (1 ,2 , 5, 6) D P -C h a n n e l M O S F E T A B S O L U T E M A X IM U M

Contextual Info: SÌ4925DY Vishay Siliconix Dual P-Channel 30-V D-S MOSFET PRODUCT S U M M A R Y V D* | V J R d s (o n ) (3 ) Id (A) 0.032 @ V GS = - 1 0 V ±6,1 0.045 e V GS = - 4 .5 V ±5.1 -3 0 Si s2 o Q S O -8 G, G2 °n n i n n Dg D2 P-C hannet M O S F E T A B S O L U T E M A X IM U M

Si7892DY

Contextual Info: MIC2582/MIC2583 Single Channel Hot Swap Controllers General Description Features The MIC2582 and MIC2583 are single channel positive voltage hot swap controllers designed to allow the safe insertion of boards into live system backplanes. The MIC2582 and MIC2583 are available in 8-pin SOIC and